Method of manufacturing an integrated circuit, an integrated circuit, and a memory module
View Patent ↗According to one embodiment of the present invention, a method of manufacturing an integrated circuit including a memory device includes, generating a solid electrolyte layer including a first solid electrolyte layer area and a second solid electrolyte layer area, the height of the top surface of the solid electrolyte layer within the second solid electrolyte layer area being lower than the height of the top surface of the solid electrolyte layer within the first solid electrolyte layer area; generating a conductive layer above the top surfaces of the first solid electrolyte layer area and the second solid electrolyte layer area; planarizing the top surface of the conductive layer such that the solid electrolyte layer is exposed within the first solid electrolyte layer area, however is covered by the conductive layer within the second solid electrolyte layer area; patterning the exposed solid electrolyte layer within the first solid electrolyte layer area.
1. A method of manufacturing an integrated circuit comprising a memory device, the method comprising:
forming a solid electrolyte layer comprising a first solid electrolyte layer area having a substantially first thickness and a second solid electrolyte layer area having a substantially second thickness, the second thickness being lower than the first thickness, wherein the solid electrolyte layer comprises a solid electrolyte layer composite structure comprising a first solid electrolyte layer, a second solid electrolyte layer disposed above the first solid electrolyte layer, and an intermediate layer sandwiched between the first solid electrolyte layer and the second solid electrolyte layer;
forming a conductive layer on or above top surfaces of the first solid electrolyte layer area and the second solid electrolyte layer area;
planarizing a top surface of the conductive layer such that the solid electrolyte layer is exposed within the first solid electrolyte layer area but is covered by the conductive layer within the second solid electrolyte layer area; and
patterning the exposed solid electrolyte layer within the first solid electrolyte layer area.
2. The method according to claim 1 , wherein portions of the solid electrolyte layer and the conductive layer located within the second solid electrolyte layer area constitute at least a part of at least one memory cell of the memory device.
3. The method according to claim 1 , wherein forming the solid electrolyte layer comprises a process of patterning a solid electrolyte layer having a top surface of a uniform height such that the height of the top surface of the solid electrolyte layer within the second solid electrolyte layer area becomes lower than the height of the top surface of the solid electrolyte layer within the first solid electrolyte layer area.
4. The method according to claim 1 , wherein patterning the exposed solid electrolyte layer is carried out such that the solid electrolyte layer is completely removed within the first solid electrolyte layer area.
5. The method according to claim 1 , wherein planarizing the top surface of the conductive layer is carried out using a chemical mechanical polishing process.
6. The method according to claim 1 , wherein forming the solid electrolyte layer comprises:
patterning the second solid electrolyte layer within the second solid electrolyte layer area until the top surface of the intermediate layer is exposed; and
patterning the exposed intermediate layer until the top surface of the first solid electrolyte layer is exposed.
7. The method according to claim 6 , wherein patterning the exposed solid electrolyte layer within the first solid electrolyte layer comprises:
patterning the second solid electrolyte layer within the first solid electrolyte layer area until the top surface of the intermediate layer is exposed;
patterning the exposed intermediate layer within the first solid electrolyte layer area until the top surface of the first solid electrolyte layer is exposed; and
patterning the first solid electrolyte layer.
8. The method according to claim 1 , wherein, after forming the conductive layer, a photo dissolution process and/or a thermal dissolution process is carried out driving metal ions out of the conductive layer into the solid electrolyte layer.
9. The method according to claim 1 , wherein the conductive layer comprises an electrode layer and a contact layer disposed on or above the electrode layer.
10. The method according to claim 9 , wherein, after having provided the electrode layer, a photo dissolution process and/or a thermal dissolution process is carried out driving metal ions out of the electrode layer into the solid electrolyte layer.
11. The method according to claim 1 , wherein the intermediate layer comprises nitride or SiC.
12. The method according to claim 9 , wherein the electrode layer comprises silver.
13. The method according to claim 1 , wherein the solid electrolyte layer comprises chalcogenide.
14. method according to claim 1 , wherein the thickness of the second solid electrolyte layer ranges from 10 nm to 100 nm.
15. The method according to claim 1 , wherein the thickness of the second solid electrolyte layer ranges from 10 nm to 100 nm.
16. The method according to claim 1 , wherein the thickness of the intermediate layer ranges from 10 Angstrom to 100 Angstrom.
17. The method according to claim 9 , wherein the thickness of the contact layer ranges from 50 nm to 300 nm.
18. The method according to claim 9 , wherein the thickness of the electrode layer ranges from 10 Angstrom to 100 Angstrom.
19. The method according to claim 6 , further comprising patterning the second solid electrolyte layer using an etching process, wherein the intermediate layer serves as an etching barrier during the etching process.
20. The method according to claim 1 , wherein the thickness of the first solid electrolyte layer corresponds to a target thickness of solid electrolyte layers of memory cells of the memory device.
21. A method of manufacturing an integrated circuit comprising a memory device, the method comprising:
forming a solid electrolyte layer comprising a first solid electrolyte layer area and a second solid electrolyte layer area, a height of a top surface of the solid electrolyte layer within the second solid electrolyte layer area being lower than a height of a top surface of the solid electrolyte layer within the first solid electrolyte layer area, wherein the solid electrolyte layer comprises a solid electrolyte layer composite structure comprising a first solid electrolyte layer, a second solid electrolyte layer disposed above the first solid electrolyte layer, and an intermediate layer sandwiched between the first solid electrolyte layer and the second solid electrolyte layer;
forming a conductive layer on or above the top surfaces of the first solid electrolyte layer area and the second solid electrolyte layer area;
planarizing the top surface of the conductive layer such that the solid electrolyte layer is exposed within the first solid electrolyte layer area but is covered by the conductive layer within the second solid electrolyte layer area; and
patterning the exposed solid electrolyte layer within the first solid electrolyte layer area.
22. The method according to claim 21 , wherein forming the solid electrolyte layer comprises:
patterning the second solid electrolyte layer within the second solid electrolyte layer area until the top surface of the intermediate layer is exposed; and
patterning the exposed intermediate layer until the top surface of the first solid electrolyte layer is exposed.
23. The method according to claim 22 , wherein patterning the exposed solid electrolyte layer within the first solid electrolyte layer comprises:
patterning the second solid electrolyte layer within the first solid electrolyte layer area until the top surface of the intermediate layer is exposed;
patterning the exposed intermediate layer within the first solid electrolyte layer area until the top surface of the first solid electrolyte layer is exposed; and
patterning the first solid electrolyte layer.
24. The method according to claim 21 , wherein the intermediate layer comprises nitride or SiC.
25. The method according to claim 21 , wherein the electrode layer comprises silver.
26. The method according to claim 21 , wherein the solid electrolyte layer comprises chalcogenide.
27. The method according to claim 21 , wherein the thickness of the first solid electrolyte layer ranges from 10 nm to 100 nm.
28. The method according to claim 21 , wherein the thickness of the second solid electrolyte layer ranges from 10 nm to 100 nm.
29. The method according to claim 21 , wherein the thickness of the intermediate layer ranges from 10 Angstrom to 100 Angstrom.
30. The method according to claim 22 , further comprising patterning the second solid electrolyte layer using an etching process, wherein the intermediate layer serves as an etching barrier during the etching process.
31. The method according to claim 21 , wherein the thickness of the first solid electrolyte layer corresponds to a target thickness of solid electrolyte layers of memory cells of the memory device.