Granted Patent B2

US 7,606,098 · App. 11/787,718 · Granted Oct 20, 2009

Abstract

Claims (128)

1. An integrated circuit device comprising:

a memory cell array including:

a plurality of word lines including a first word line and a second word line;

a plurality of word line segments including a first word line segment and a second word line segment, wherein each word line segment is coupled to an associated word line and wherein the first word line segment is associated with the first word line and the second word line segment is associated with the second word line;

a plurality of bit lines; and

a plurality of memory cells, wherein each memory cell stores at least one data state and includes a transistor, wherein the transistor includes:

a first region coupled to an associated bit line;

a second region;

a body region disposed between the first region and the second region, wherein the body region is electrically floating; and

a gate coupled to an associated word line via an associated word line segment; and

wherein:

a first group of memory cells is coupled to the first word line via the first word line segment and a second group of memory cells is coupled to the second word line via the second word line segment; and

at least one memory cell of the first group of memory cells is adjacent to at least one memory cell of the second group of memory cells;

first circuitry, coupled to (i) a first memory cell in the first group of memory cells and (ii) a first memory cell in the second group of memory cells, to sense a data state stored in the first memory cell and a data state stored in the second memory cell wherein the first memory cell in the second group of memory cells is adjacent to one of the memory cells in the first group of memory cells; and

reference generator circuitry, coupled to the first circuitry, to provide a reference to the first circuitry wherein the first circuitry uses the reference to sense the data state stored in each memory cell coupled to the first and second bit lines.

2. The integrated circuit device of claim 1 wherein the number of memory cells in the first group of memory cells is two.

3. The integrated circuit device of claim 1 wherein the number of memory cells in the first group of memory cells is two or more.

4. The integrated circuit device of claim 1 wherein the number of memory cells in the first group of memory cells is substantially equal to a pitch of the first circuitry.

5. The integrated circuit device of claim 1 further including second circuitry, coupled to (i) a second memory cell in the first group of memory cells and (ii) a second memory cell in the second group of memory cells, wherein the first circuitry is located on a first side of the first and second groups of memory cells and the second circuitry is located on a second side of the first and second groups of memory cells, wherein the first side is opposite the second side.

6. The integrated circuit device of claim 1 further including bit line selection circuitry disposed between (i) the first circuitry and (ii) the first and second bit lines, to connect the first bit line to the first circuitry in response to a first signal and the second bit line to the first circuitry in response to a second signal.

7. An integrated circuit device comprising:

a memory cell array including:

a plurality of word lines including a first word line and a second word line;

a plurality of word line segments including a first word line segment and a second word line segment, wherein each word line segment is coupled to an associated word line and wherein the first word line segment is associated with the first word line and the second word line segment is associated with the second word line;

a plurality of bit lines; and

a plurality of memory cells, wherein each memory cell stores at least one data state and includes a transistor, wherein the transistor includes:

a first region coupled to an associated bit line;

a second region;

a body region disposed between the first region and the second region, wherein the body region is electrically floating; and

a gate coupled to an associated word line via an associated word line segment; and

wherein:

a first group of memory cells is coupled to the first word line via the first word line segment and a second group of memory cells is coupled to the second word line via the second word line segment; and

at least one memory cell of the first group of memory cells is adjacent to at least one memory cell of the second group of memory cells;

first circuitry, coupled to a first bit line and a second bit line, to sense a data state stored in each memory cell coupled to the first and second bit lines, wherein:

the first region of the transistor of the first memory cell in the first group of memory cells is coupled to the first circuitry via the first bit line; and

the first region of the transistor of the first memory cell in the second group of memory cells is coupled to the first circuitry via the second bit line; and

bit line selection circuitry to responsively connect the first bit line or second bit line to the first circuitry.

8. The integrated circuit device of claim 7 further including reference generator circuitry, coupled to the first circuitry, to provide a reference to the first circuitry wherein the first circuitry uses the reference to sense the data state stored in each memory cell coupled to the first and second bit lines.

9. The integrated circuit device of claim 7 wherein the number of memory cells in the first group of memory cells is two or more.

10. The integrated circuit device of claim 7 wherein the number of memory cells in the first group of memory cells is substantially equal to a pitch of the first circuitry.

11. The integrated circuit device of claim 7 further including second circuitry, coupled to (i) a second memory cell in the first group of memory cells and (ii) a second memory cell in the second group of memory cells, wherein the first circuitry is located on a first side of the first and second groups of memory cells and the second circuitry is located on a second side of the first and second groups of memory cells, wherein the first side is opposite the second side.

12. An integrated circuit device comprising:

a memory cell array including:

a plurality of word lines including a first word line and a second word line;

a plurality of word line segments including a first word line segment and a second word line segment, wherein each word line segment is coupled to an associated word line and wherein the first word line segment is associated with the first word line and the second word line segment is associated with the second word line;

a plurality of bit lines; and

a plurality of memory cells, wherein each memory cell stores at least one data state and includes a transistor, wherein the transistor includes:

a first region coupled to an associated bit line;

a second region;

a body region disposed between the first region and the second region, wherein the body region is electrically floating; and

a gate coupled to an associated word line via an associated word line segment; and

wherein:

a first group of memory cells is coupled to the first word line via the first word line segment and a second group of memory cells is coupled to the second word line via the second word line segment; and

at least one memory cell of the first group of memory cells is adjacent to at least one memory cell of the second group of memory cells; and

first circuitry, coupled to a first memory cell in the first group of memory cells, to sense the data state stored in a first memory cell;

wherein the number of memory cells in the first group of memory cells is substantially equal to a pitch of the first or second circuitry.

13. The integrated circuit device of claim 12 further including reference generator circuitry, coupled to the first circuitry, to provide a reference to the first circuitry wherein the first circuitry uses the reference to sense the data state stored in each memory cell coupled to the first and second bit lines.

14. The integrated circuit device of claim 12 wherein the number of memory cells in the first group of memory cells is two or more.

15. An integrated circuit device comprising:

a memory cell array including:

a plurality of word lines including a first word line and a second word line;

a plurality of word line segments including a first word line segment and a second word line segment, wherein each word line segment is coupled to an associated word line and wherein the first word line segment is associated with the first word line and the second word line segment is associated with the second word line;

a plurality of bit lines; and

a plurality of memory cells, each memory cell includes a transistor, wherein the transistor includes:

a first region coupled to an associated bit line;

a second region;

a body region disposed between the first region and the second region, wherein the body region is electrically floating; and

a gate coupled to an associated word line via an associated word line segment; and

wherein each memory cell stores at least one data state including:

(i) a first data state which is representative of a first charge in the body region of the associated electrically floating body transistor; and

(ii) a second data state which is representative of a second charge in the body region of the associated electrically floating body transistor; and

wherein:

a first group of memory cells is coupled to the first word line via the first word line segment and a second group of memory cells is coupled to the second word line via the second word line segment; and

at least one memory cell of the first group of memory cells is adjacent to at least one memory cell of the second group of memory cells.

16. The integrated circuit device of claim 15 wherein the number of memory cells in the first group of memory cells is two or more.

17. The integrated circuit device of claim 15 further including:

first circuitry, coupled to a first memory cell in the first group of memory cells, to sense the data state stored in a first memory cell;

second circuitry, coupled to a second memory cell in the first group of memory cells, to sense the data state stored in a second memory cell;

wherein the number of memory cells in the first group of memory cells is substantially equal to a pitch of the first or second circuitry.

18. The integrated circuit device of claim 15 further including:

first circuitry, coupled to a first memory cell in the first group of memory cells, to sense the data state stored in a first memory cell;

second circuitry, coupled to a second memory cell in the first group of memory cells, to sense the data state stored in a second memory cell;

wherein:

the first circuitry is coupled to a first memory cell in the second group of memory cells, to sense the data state stored in a first memory cell in the second group of memory cells;

the second circuitry is coupled to a second memory cell in the second group of memory cells, to sense the data state stored in a second memory cell in the second group of memory cells; and

the first circuitry is located on a first side of the first and second groups of memory cells and the second circuitry is located on a second side of the first and second groups of memory cells, wherein the first side is opposite the second side.

19. The integrated circuit device of claim 15 further including first circuitry, coupled to (i) a first memory cell in the first group of memory cells and (ii) a first memory cell in the second group of memory cells, to sense the data state stored in the first memory cell and the second memory cell wherein the first memory cell in the second group of memory cells is adjacent to one of the memory cells in the first group of memory cells.

20. The integrated circuit device of claim 15 further including:

first circuitry, coupled to a first bit line and a second bit line, to sense the data state stored in each memory cell connected to the first and second bit lines, wherein:

the first region of the transistor of the first memory cell in the first group of memory cells is coupled to the first circuitry via the first bit line; and

the first region of the transistor of the first memory cell in the second group of memory cob is coupled to the first circuitry via the second bit line; and

bit line selection circuitry to responsively connect the first bit line or second bit line to the first circuitry.

21. The integrated circuit device of claim 15 further including:

first circuitry, coupled to a first bit line and a second bit line, to sense the data state stored in each memory cell connected to the first and second bit lines, wherein:

the first region of the transistor of the first memory cell in the first group of memory cells is coupled to the first circuitry via the first bit line; and

the first region of the transistor of the first memory cell in the second group of memory cells is coupled to the first circuitry via the second bit line; and

bit line selection circuitry disposed between (i) the first circuitry and (ii) the first and second bit lines, to connect the first bit line to the first circuitry in response to a first signal and the second bit line to the first circuitry in response to a second signal.

22. An integrated circuit device comprising:

a memory cell any including:

a plurality of word lines including a first word line and a second word line;

a plurality of word line segments including a first word line segment and a second word line segment, wherein each word line segment is coupled to an associated word line and wherein the first word line segment is associated with the first word line and the second word line segment is associated with the second word line;

a plurality of bit lines; and

a plurality of memory cells, each memory cell storing at least one memory state and consisting essentially of a transistor, wherein the transistor includes:

a first region coupled to an associated bit line;

a second region;

a body region disposed between the first region and the second region, wherein the body region is electrically floating; and

a gate coupled to an associated word line via an associated word line segment; and

wherein:

a first group of memory cells is coupled to the first word line via the first word line segment and a second group of memory cells is coupled to the second word line via the second word line segment; and

at least one memory cell of the first group of memory cells is adjacent to at least one memory cell of the second group of memory cells.

23. The integrated circuit device of claim 22 further including:

first circuitry, coupled to a first memory cell in the first group of memory cells, to sense the data state stored in a first memory cell;

wherein the number of memory cells in the first group of memory cells is substantially equal to a pitch of the first circuitry.

24. The integrated circuit device of claim 22 further including:

first circuitry, coupled to a first memory cell in the first group of memory cells, to sense the data state stored in a first memory cell;

second circuitry, coupled to a second memory cell in the first group of memory cells, to sense the data state stored in a second memory cell; and

wherein:

the first circuitry is coupled to a first memory cell in the second group of memory cells, to sense the data state stored in a first memory cell in the second group of memory cells;

the second circuitry is coupled to a second memory cell in the second group of memory cells, to sense the data state stored in a second memory cell in the second group of memory cells; and

the first circuitry is located on a first side of the first and second groups of memory cells and the second circuitry is located on a second side of the first and second groups of memory cells, wherein the first side is opposite the second side.

25. The integrated circuit device of claim 22 further including first circuitry, coupled to (i) a first memory cell in the first group of memory cells and (ii) a first memory cell in the second group of memory cells, to sense the data state stored in the first memory cell and the second memory cell wherein the first memory cell in the second group of memory cells is adjacent to one of the memory cells in the first group of memory cells.

26. The integrated circuit device of claim 25 further including reference generator circuitry, coupled to the first circuitry, to provide a reference to the first circuitry wherein the first circuitry uses the reference to sense the data state stored in each memory cell coupled to the first and second bit lines.

27. The integrated circuit device of claim 22 further including:

first circuitry, coupled to a first bit line and a second bit line, to sense the data state stored in each memory cell connected to the first and second bit lines, wherein:

the first region of the transistor of the first memory cell in the first group of memory cells is coupled to the first circuitry via the first bit line; and

the first region of the transistor of the first memory cell in the second group of memory cells is coupled to the first circuitry via the second bit line; and

bit line selection circuitry disposed between (i) the first circuitry and (ii) the first and second bit lines, to connect the first bit line to the first circuitry in response to a first signal and the second bit line to the first circuitry in response to a second signal.

28. The integrated circuit device of claim 27 further including reference generator circuitry, coupled to the first circuitry, to provide a reference to the first circuitry wherein the first circuitry uses the reference to sense the data state stored in each memory cell coupled to the first and second bit lines.

Assignments (10)