Semiconductor device package with base features to reduce leakage
View Patent ↗A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage base-sidewall interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.
1. A semiconductor device package comprising:
a container including a base and sidewalls, said base configured to support a semiconductor device chip, said base and sidewalls comprising materials having different thermal expansion coefficients, and
a lead frame extending through at least one of said sidewalls, characterized in that said base has at least one reentrant feature that is positioned within the thickness of at least one of said sidewalls and engages said at least one sidewall, wherein the at least one reentrant feature is a hook-like flange that engages a reciprocal feature of the at least one sidewall to inhibit lateral separation of the at least one sidewall from the base.
2. The package of claim 1 , wherein said reentrant feature is located at the side and near the top of said base.
3. The package of claim 1 , further including at least one conductor electrically coupling said lead frame to said chip, and an encapsulant covering said chip and said conductor.
4. A semiconductor device package comprising:
a container including a base and sidewalls, said base configured to support a semiconductor device chip, said base and sidewalls comprising materials having different thermal expansion coefficients, and
a lead frame extending through at least one of said sidewalls, characterized in that said base has at least one groove that is positioned within the thickness of at least one of said sidewalls and engages said at least one sidewall, wherein:
the at least one groove is defined by a recess between two plateau regions of substantially equal height on a top surface of the base;
the at least one sidewall has a reciprocal protrusion in a bottom-facing surface of the at least one sidewall; and
the recess defining the at least one groove in the base receives the reciprocal protrusion of the at least one sidewall.
5. The package of claim 4 , wherein said groove has sharp corners at the top of said base.
6. The package of claim 4 , further including at least one conductor electrically coupling said lead frame to said chip, and an encapsulant covering said chip and said conductor.
7. The package of claim 1 , wherein the at least one reentrant feature is continuous along at least one edge of the base mating with the at least one sidewall.
8. The package of claim 1 , wherein the at least one reentrant feature is segmented along at least one edge of the base to form teeth mating with the at least one sidewall.
9. The package of claim 1 , wherein the base further comprises at least one groove that is positioned within the thickness of at least one of said sidewalls and engages said at least one sidewall.
10. A base for supporting a semiconductor device chip in a semiconductor device package, wherein:
the base comprises a plurality of outer edges adapted to mate with sidewalls of the semiconductor device package;
the base has at least one reentrant feature that is adapted to be positioned within the thickness of at least one of said sidewalls and to engage said at least one sidewall, wherein the at least one reentrant feature is a hook-like flange that engages a reciprocal feature of the at least one sidewall to inhibit lateral separation of the at least one sidewall from the base.
11. The base of claim 10 , wherein the at least one reentrant feature is continuous along each edge of the base adapted to mate with one of the sidewalls.
12. The base of claim 10 , wherein the at least one reentrant feature is segmented along at least one edge of the base to form teeth adapted to mate with said at least one sidewall.
13. The base of claim 10 , wherein the base further comprises at least one groove that is positioned within the thickness of at least one of said sidewalls and engages said at least one sidewall.
14. The base of claim 10 , wherein the base and the sidewalls comprise materials having different thermal expansion coefficients.
15. The base of claim 13 , wherein:
the at least one groove is defined by a recess between two plateau regions of substantially equal height on a top surface of the base;
the at least one sidewall has a reciprocal protrusion in a bottom-facing surface of the at least one sidewall; and
the recess defining the at least one groove in the base receives the reciprocal protrusion of the at least one sidewall.
16. The package of claim 9 , wherein:
the at least one groove is defined by a recess between two plateau regions of substantially equal height on a top surface of the base;
the at least one sidewall has a reciprocal protrusion in a bottom-facing surface of the at least one sidewall; and
the recess defining the at least one groove in the base receives the reciprocal protrusion of the at least one sidewall.