IP Library Granted Patent US 7,344,920
Granted Patent B1
US 7,344,920 · App. 11/798,417 · Granted Mar 18, 2008

Integrated circuit package and method for fabricating same

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Quick Facts
Patent No.
US 7,344,920
App. No.
11/798,417
Granted
Mar 18, 2008
Kind
B1
Abstract

A process for fabricating an integrated circuit package includes: selectively etching a first side of a substrate thereby providing etched regions of the substrate to partially define at least a plurality of contact pads; adding a dielectric material to the etched regions of the substrate; selectively etching a second side of the substrate to further define at least the plurality of contact pads and thereby provide a package base of at least the contact pads and the dielectric; mounting a semiconductor die to the package base and connecting the semiconductor die to the contact pads; fixing a lid to the package base to cover the semiconductor die in a cavity between the lid and the package base; and singulating to provide the integrated circuit package.

Claims (20)

1. A process for fabricating an integrated circuit package comprising:

selectively etching a first side of a substrate thereby providing etched regions of said substrate to partially define at least a plurality of contact pads;

adding a dielectric material to said etched regions of said substrate;

selectively etching a second side of said substrate to further define the plurality of contact pads and thereby provide a package base of at least the contact pads and said dielectric; wherein selectively etching said second side of said substrate comprises:

providing a plating resist on selected portions of said second side of said substrate;

plating said etch-resist on said second side of said substrate, between said selected portions of said second side of said substrate;

stripping said plating resist to expose said selected portions of said second side of said substrate; and

etching said selected portions of said second side of said substrate,

mounting a semiconductor die to said package base and connecting said semiconductor die to said contact pads; fixing a lid to said package base to cover said semiconductor die in a cavity between said lid and said package base; and singulating to provide said integrated circuit package.

2. The process according to claim 1 , wherein said selectively etching a first side of said substrate comprises selectively etching to partially define a plurality of contact pads and a die attach pad and wherein selectively etching a second side of said substrate comprises selectively etching to further define the contact pads and the die attach pad.

3. The process according to claim 2 , wherein mounting a semiconductor die to said package base and connecting said semiconductor die to said contact pads comprises mounting said semiconductor die to said die attach pad and wire bonding said semiconductor die to ones of said contact pads.

4. The process according to claim 1 , wherein adding said dielectric comprises molding a liquid crystal polymer in said etched regions.

5. The process according to claim 1 , wherein adding said dielectric comprises one of screen printing and laminating said dielectric in said etched regions.

6. The process according to claim 1 , further comprising depositing a barrier on a side of said dielectric, prior to fixing said lid to said package base.

7. The process according to claim 6 , wherein depositing said barrier comprises depositing a liquid crystal polymer.

8. The process according to claim 6 , wherein depositing said barrier comprises depositing a soldermask.

9. The process according to claim 1 , wherein selectively etching said first side of said substrate comprises:

depositing a photo-imageable etch-resistant mask on said first side of said substrate;

imaging and developing said mask to expose portions of said first side of said substrate; and

etching said first side of said substrate to thereby etch said exposed portions of said first side of said substrate.

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE ADD ANNEX INADVERTENTLY LEFT OUT ORIGINAL ASSIGNMENT DOCUMENT PREVIOUSLY RECORDED AT REEL: 037880 FRAME: 0534. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jul 8, 2016
From: UTAC HONG KONG LIMITED
To: UTAC HEADQUARTERS PTE. LTD.
Reel/Frame 039822/0591 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 23, 2016
From: UTAC HONG KONG LIMITED
To: UTAC HEADQUARTERS PTE. LTD.
Reel/Frame 037880/0534 →
CHANGE OF NAME Recorded Oct 29, 2010
From: ASAT LIMITED
To: UTAC HONG KONG LIMITED
Reel/Frame 025217/0414 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS - SECOND PRIORITY Recorded Jun 29, 2010
From: UTAC HONG KONG LIMITED
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024599/0827 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS - FIRST PRIORITY Recorded Jun 29, 2010
From: UTAC HONG KONG LIMITED
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024599/0743 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS - SECOND PRIORITY Recorded Jun 29, 2010
From: UTAC HONG KONG LIMITED
To: THE HONGKONG AND SHANGHAI BANKING CORPORATION LIMITED, AS SECURITY AGENT
Reel/Frame 024611/0097 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2007
From: KIRLOSKAR, MOHAN; WAGENHOFFER, KATHERINE; HIGGINS, III, LEO M.
To: ASAT LTD.
Reel/Frame 019366/0416 →