NAND step up voltage switching method
Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow threshold voltage situations and programming at a larger Vstep increment where faster programming is desired.
1. A method for programming a NAND memory, comprising:
programming at least a first of a plurality of states of a multiple state memory with a first series of programming pulses having a first step-up voltage gap;
changing the gap of the first step-up voltage gap to a second larger gap; and
programming a remaining plurality of states of the multiple state memory with a second series of programming pulses having the second step-up voltage gap;
wherein changing the gap comprises:
determining a switching point for changing the gap by verifying programming of each of the at least a first of the plurality of states, and changing the gap when each of the at least a first of the plurality of states is verified; and
changing the gap at the switching point.
2. The method of claim 1 , wherein programming comprises performing lower page programming and upper page programming, lower page programming setting two levels, and upper page programming programming each of the two levels to two additional levels.
3. The method of claim 2 , wherein lower page programming programs the first two levels using a fixed step-up voltage increment.
4. A NAND memory device, comprising:
an array of non-volatile memory cells having series-coupled strings of non-volatile memory cells; and
circuitry for control and/or access of the array of non-volatile memory cells, the control circuitry adapted to perform a method comprising:
programming at least a first of a plurality of states of a multiple state memory with a first series of programming pulses having a first step-up voltage gap;
changing the gap of the first step-up voltage gap to a second larger gap; and
programming a remaining plurality of states of the multiple state memory with a second series of programming pulses having the second step-up voltage gap.
5. A memory device, comprising:
an array of non-volatile memory cells accessed by bitlines and word lines;
circuitry for control and/or access of the array of non-volatile memory cells, the control circuitry adapted to perform a method comprising:
programming at least a first of a plurality of states of a multiple state memory with a first series of programming pulses having a first step-up voltage gap;
changing the gap of the first step-up voltage gap to a second larger gap; and
programming a remaining plurality of states of the multiple state memory with a second series of programming pulses having the second step-up voltage gap.
6. A processing system, comprising:
a processor; and
a memory device coupled to the processor to store data provided by the processor and to provide data to the processor, the memory comprising:
an array of memory cells arranged in rows and columns and accessed by bitlines and word lines;
address circuitry to latch address signals provided on address input connections; and
circuitry for control and/or access of the array of non-volatile memory cells, the control circuitry adapted to perform a method comprising:
programming at least a first of a plurality of states of a multiple state memory with a first series of programming pulses having a first step-up voltage gap;
changing the gap of the first step-up voltage gap to a second larger gap; and
programming a remaining plurality of states of the multiple state memory with a second series of programming pulses having the second step-up voltage gap.
7. A memory module, comprising:
a plurality of contacts; and
two or more memory devices, each having access lines selectively coupled to the plurality of contacts;
wherein at least one of the memory devices comprises:
an array of non-volatile memory cells arranged in rows and columns and accessed by bitlines and word lines; and
circuitry for control and/or access of the array of non-volatile memory cells, the control circuitry adapted to perform a method comprising:
programming at least a first of a plurality of states of a multiple state memory with a first series of programming pulses having a first step-up voltage gap;
changing the gap of the first step-up voltage gap to a second larger gap; and
programming a remaining plurality of states of the multiple state memory with a second series of programming pulses having the second step-up voltage gap.
8. The method of claim 1 , wherein programming comprises programming cells of the memory to one of four states.
9. The method of claim 8 , wherein programming the remaining plurality of states comprises programming cells that are to be programmed to two of the four states before changing the gap.
10. The method of claim 9 , wherein programming at least a first of the plurality of states comprises programming the remaining two states after changing the gap.
11. The method of claim 1 , wherein programming is started with a voltage less than that of a first of the states to be programmed.
12. A method for programming a memory device, comprising:
programming at least a first of a plurality of states of a multiple state memory with a first series of programming pulses having a first step-up voltage gap;
changing the gap of the first step-up voltage gap to a second larger gap; and
programming a remaining plurality of states of the multiple state memory with a second series of programming pulses having the second step-up voltage gap;
wherein changing the gap comprises:
determining a switching point for changing the gap by verifying programming of each of the at least a first of the plurality of states, and
changing the gap when each of the at least a first of the plurality of states is verified; and
changing the gap at the switching point.
13. The NAND memory device of claim 4 , wherein the control circuitry is further adapted to change the gap to the second larger gap by verifying programming of each of the at least a first of the plurality of states, and changing the gap when each of the at least a first of the plurality of states is verified, and changing the gap at a switching point.
14. The NAND memory device of claim 4 , wherein the control circuitry is further adapted to change the gap to the second larger gap at a switching point determined as part of a trim set for the memory.
15. The NAND memory device of claim 4 , wherein programming at least a first of the plurality of states further comprises performing lower page programming and upper page programming, lower page programming setting two levels, and upper page programming programming each of the two levels to two additional levels.
16. The NAND memory device of claim 15 , wherein lower page programming programs the first two levels using a fixed step-up voltage increment.
17. The NAND memory device of claim 4 , wherein programming is started with a voltage less than that of a first of the states to be programmed.
18. The NAND memory device of claim 5 , wherein the control circuitry is further adapted to change the gap by verifying programming of each of the at least a first of the plurality of states, and changing the gap when each of the at least a first of the plurality of states is verified, and changing the gap at a switching point.
19. The NAND memory device of claim 5 , wherein the control circuitry is further adapted to change the gap to the second larger gap at a switching point determined as part of a trim set for the memory.
20. The NAND memory device of claim 5 , wherein programming at least a first of the plurality of states further comprises performing lower page programming and upper page programming, lower page programming setting two levels, and upper page programming programming each of the two levels to two additional levels.
21. The NAND memory device of claim 20 , wherein lower page programming programs the first two levels using a fixed step-up voltage increment.