Zinc-tin oxide thin-film transistors
Methods of forming transparent zinc-tin oxide structures are described. Devices that include transparent zinc-tin oxide structures as at least one of a channel layer in a transistor or a transparent film disposed over an electrical device that is at a substrate.
1. A process comprising:
forming a plurality of different chemically adhered monolayers, including a zinc containing monolayer and a tin containing monolayer, on a substrate; and
processing the plurality of chemically adhered monolayers, including heating the formed plurality of chemically adhered monolayers, to form a crystalline zinc-tin compound containing a transparent conductive oxide (TCO) structure.
2. The process of claim 1 , wherein processing includes alloying the plurality of chemically adhered monolayers on the substrate.
3. The process of claim 1 , wherein the TCO structure is formed epitaxially upon a semiconductor active section of the substrate.
4. The process of claim 1 , wherein the TCO structure is formed upon a dielectric section of the substrate.
5. The process of claim 1 , wherein forming the plurality of chemically adhered monolayers includes disposing an organo-zinc monolayer against an organo-tin monolayer.
6. The process of claim 1 , wherein forming the plurality of chemically adhered monolayers includes disposing a zinc halide monolayer against a tin halide monolayer.
7. The process of claim 1 , wherein processing the plurality of chemically adhered monolayers includes forming a TCO film that abuts an electronic device disposed at the substrate.
8. The process of claim 1 , wherein processing the plurality of chemically adhered monolayers includes forming a TCO film as a channel layer in a field-effect transistor.
9. The process of claim 1 , wherein processing the plurality of chemically adhered monolayers includes:
forming a TCO film that abuts an electronic device disposed at the substrate; and
forming a TCO film as a channel layer in a field-effect transistor.
10. A process comprising:
forming one of a zinc-containing first monolayer or a tin-containing first monolayer on a substrate that is disposed in a tool;
purging the tool;
forming the other of the zinc-containing monolayer or the tin-containing monolayer on the first monolayer to form a plurality of chemically adhered monolayers; and
processing the plurality of chemically adhered monolayers to form a crystalline transparent zinc-tin oxide structure therefrom.
11. The process of claim 10 , wherein at least one of the zinc-containing monolayer is a zinc halide monolayer or the tin-containing monolayer is a tin halide monolayer.
12. The process of claim 10 , wherein at least one of the zinc-containing monolayer is an organo-zinc monolayer or the tin-containing monolayer is an organo-tin monolayer.
13. The process of claim 10 , further including abutting the transparent zinc-tin oxide structure against an electronic device disposed at the substrate.
14. The process of claim 10 , further including forming a gate stack above the transparent zinc-tin oxide structure, the process including:
forming a gate dielectric layer above and on the transparent zinc-tin oxide structure; and
forming a control gate film against the gate dielectric layer.
15. The process of claim 10 , further including:
abutting the transparent zinc-tin oxide structure against an electronic device; and
forming a gate stack above the transparent zinc-tin oxide structure, the gate stack forming process including:
forming a gate dielectric layer above and on the transparent zinc-tin oxide structure; and
forming a control gate film against the gate dielectric layer.
16. The process of claim 10 , wherein processing the plurality of chemically adhered monolayers to form a transparent zinc-tin oxide structure includes forming multiple alternating layers of zinc- and tin-containing monolayers.
17. The process of claim 10 , wherein processing the plurality of chemically adhered monolayers to form a transparent zinc-tin oxide structure includes heating the monolayers in the presence of an oxidizer.