Compositions for processing of semiconductor substrates
View Patent ↗Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of microelectronic device wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen.
1. A method of processing a microelectronic device substrate to remove undesired material therefrom or to prepare a surface of said microelectronic device substrate for subsequent treatment, said method comprising contacting the microelectronic device substrate after chemical mechanical polishing with an effective amount of a composition comprising (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, wherein the complexing agent includes at least one component selected from the group consisting of acetic acid, acetone oxime, alanine, 5-aminotetrazole, ammonium benzoate, arginine, asparagine, aspartic acid, benzoic acid, benzotriazole (BTA), betaine, dimethyl glyoxime, fumaric acid, glutamic acid, glutamine, glutaric acid, glycerol, glycine, glycolic acid, glyoxylic acid, histidine, imidazole, iminodiacetic acid, isophthalic acid, itaconic acid, lactic acid, leucine, lysine, maleic acid, malic acid, malonic acid, 2-mercaptobenzimidiazole, oxalic acid, 2,4-pentanedione, phenylacetic acid, phenylalanine, phthalic acid, proline, pyromellitic acid, quinic acid, serine, sorbitol, succinic acid, terephthalic acid, 1,2,4-triazole, trimellitic acid, trimesic acid, tyrosine, valine, xylitol, and derivatives of the foregoing amino acids, with the provision that the complexing agent does not include citric acid.
2. The method of claim 1 , wherein the undesired material is selected from the group consisting of etch residue, ash residue, chemical mechanical polishing residue, and BTA.
3. The method of claim 1 , wherein the composition includes about 0.001 to about 90 wt. % alkanolamine, about 0.00001 to about 40 wt. % quaternary ammonium hydroxide, and about 0.00001 to about 20 wt. % complexing agent, based on total weight of the composition.
4. The method of claim 1 , wherein the composition includes water.
5. The method of claim 1 , wherein the composition comprises alkanolamine including at least one species selected from the group consisting of amino ethylethanolamine, N-methylamino ethanol, amino ethoxyethanol, dimethylaminoethoxyethanol, diethanolamine, N-methyldiethanolamine, monoethanolamine, triethanolamine, and C 1 -C 8 alkanolamines; and
wherein the composition comprises quaternary ammonium hydroxide selected from the group consisting of choline, tetrabutylammoniumhydroxide, tetraethylammonium hydroxide, tetramethylammonium hydroxide, tetrapropylammoniumhydroxide, and combinations thereof.
6. The method of claim 1 , wherein the composition has a pH in a range from 9 to 14.
7. The method of claim 1 , wherein the composition comprises components (i), (ii) and (iii) in relative proportions rendering the composition non-darkening in exposure to oxygen.
8. The method of claim 1 , wherein the composition further comprises a residue material selected from the group consisting of post-CMP residue, post-etch residue, post-ash residue, and benzotriazole.
9. The method of claim 1 , wherein the composition is devoid of gallic acid or ascorbic acid.
10. The method of claim 1 , wherein the composition is further characterized by (I), (II), or (III);
(I) comprising lactic acid and MBI;
(II) comprising monoethanolamine and triethanolamine; or
(III) comprising benzoic acid.