Patent Assignment
Reel/Frame 041029/0903
Assignment of Assignor's Interest
Recorded: 2016-12-19
Pages: 10
Assignor
ADVANCED TECHNOLOGY MATERIALS, INC.
Executed: 2016-11-28
Assignee
ENTEGRIS, INC.
129 CONCORD ROAD, BILLERICA, MASSACHUSETTS, 01821
Covered Properties
(89)
Ni Selective Etching Composition That Is Compatible with Nige and Ge
PCT:
PCT/US2015/028593 ↗
Aqueous Ammonium Fluoride and Amine Containing Compositions for Cleaning Inorganic Residues on Semiconductor Substrates
Patent:
6,224,785 →
Application:
08/924,021 →
Selective Silicon Oxide Etchant Formulation Including Fluoride Salt, Chelating Agent, and Glycol Solvent
Patent:
6,280,651 →
Application:
09/215,655 →
Formulations Including a 1,3-Dicarbonyl Compound Chelating Agent for Stripping Residues from Semiconductor Substrates
Patent:
6,211,126 →
Application:
09/331,537 →
Planarization Composition for Removing Metal Films
Patent:
6,267,909 →
Application:
09/416,353 →
Post Chemical-Mechanical Planarization (Cmp) Cleaning Composition
Patent:
6,194,366 →
Application:
09/440,917 →
Ammonium Borate Containing Compositions for Stripping Residues from Semiconductor Substrates
Patent:
6,875,733 →
Application:
09/529,496 →
Post Chemical-Mechanical Planarization (Cmp) Cleaning Composition
Patent:
6,492,308 →
Application:
09/587,883 →
Post Chemical-Mechanical Planarization (Cmp) Cleaning Composition
Boric Acid Containing Compositions for Stripping Residues from Semiconductor Substrates
Aqueous Cleaning Composition Containing Copper-Specific Corrosion Inhibitor for Cleaning Inorganic Residues on Semiconductor Substrate
Cleaning Compositions
Chemical Mechanical Polishing Compositions for Metal and Associated Materials and Method of Using Same
Abrasive Free Formulations for Chemical Mechanical Polishing of Copper and Associated Materials and Method of Using Same
Preparation of High Performance Silica Slurry Using a Centrifuge
Post Plasma Ashing Wafer Cleaning Formulation
Formulations Including a 1,3-Dicarbonyl Compound Chelating Agent and Copper Corrosion Inhibiting Agents for Stripping Residues from Semiconductor Substrates Containing Copper Structures
Formulations Including a 1,3-Dicarbonyl Compound Chelating Agent and Copper Corrosion Inhibiting Agents for Stripping Residues from Semiconductor Substrates Containing Copper Structures
Aqueous Cleaning Composition Containing Copper-Specific Corrosion Inhibitor for Cleaning Inorganic Residues on Semiconductor Substrate
Boric Acid Containing Compositions for Stripping Residues from Semiconductor Substrates
Composition and Process for Wet Stripping Removal of Sacrificial Anti-Reflective Material
Passivative Chemical Mechanical Polishing Composition for Copper Film Planarization
Photoresist Removal
Cleaning Compositions
Resist, Barc and Gap Fill Material Stripping Chemical and Method
Chemical Mechanical Planarization Pad
Composition and Process for Post-Etch Removal of Photoresist and/or Sacrificial Anti-Reflective Material Deposited on a Substrate
Aqueous Cleaning Composition Containing Copper-Specific Corrosion Inhibitor for Cleaning Inorganic Residues on Semiconductor Substrate
Aqueous Cleaning Composition Containing Copper-Specific Corrosion Inhibitor for Cleaning Inorganic Residues on Semiconductor Substrates
Compositions for Processing of Semiconductor Substrates
Aqueous Cleaner with Low Metal Etch Rate Comprising Alkanolamine and Tetraalkylammonium Hydroxide
Passivative Chemical Mechanical Polishing Composition for Copper Film Planarization
Aqueous Cleaning Composition Containing Copper-Specific Corrosion Inhibitor for Cleaning Inorganic Residues on Semiconductor Substrate
Composition Useful for Removal of Post-Etch Photoresist and Bottom Anti-Reflection Coatings
Compositions for Processing of Semiconductor Substrates
Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition
Chemical Mechanical Planarization Pad
Oxidizing Aqueous Cleaner for the Removal of Post-Etch Residues
Metals Compatible Post-Etch Photoresist Remover and/or Sacrificial Antireflective Coating Etchant
Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon
Method of Passivating Chemical Mechanical Polishing Compositions for Copper Film Planarization Processes
Antioxidants for Post-Cmp Cleaning Formulations
Low Ph Mixtures for the Removal of High Density Implanted Resist
Liquid Cleaner for the Removal of Post-Etch Residues
Application:
12/520,121 →
Publication:
US 2010/0163788
Compositions and Methods for the Selective Removal of Silicon Nitride
Aqueous Cleaning Composition Containing Copper-Specific Corrosion Inhibitor for Cleaning Inorganic Residues on Semiconductor Substrate
Removal of Masking Material
Non-Amine Post-Cmp Composition and Method of Use
Solvent-Free Synthesis of Soluble Nanocrystals
Oxidizing Aqueous Cleaner for the Removal of Post-Etch Residues
Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon
Copper Cleaning and Protection Formulations
Lithographic Tool in Situ Clean Formulations
Aqueous Cerium-Containing Solution Having an Extended Bath Lifetime for Removing Mask Material
Photoresist Removal
Cleaning Agent for Semiconductor Provided with Metal Wiring
Method for Recycling of Obsolete Printed Circuit Boards
Aqueous Cleaning Composition Containing Copper-Specific Corrosion Inhibitor for Cleaning Inorganic Residues on Semiconductor Substrate
Aqueous Cleaner for the Removal of Post-Etch Residues
Etching Solution for Copper or Copper Alloy
Sustainable Process for Reclaiming Precious Metals and Base Metals from E-Waste
Composition and Process for Selectively Etching Metal Nitrides
Composition for and Method of Suppressing Titanium Nitride Corrosion
Formulations for the Removal of Particles Generated by Cerium-Containing Solutions
Application:
13/978,825 →
Publication:
US 2014/0318584
Method for the Recovery of Lithium Cobalt Oxide from Lithium Ion Batteries
Sulfolane Mixtures as Ambient Aprotic Polar Solvents
Photoresist Removal
Antioxidants for Post-Cmp Cleaning Formulations
Apparatus and Method for Stripping Solder Metals During the Recycling of Waste Electrical and Electronic Equipment
Non-Amine Post-Cmp Composition and Method of Use
Oxidizing Aqueous Cleaner for the Removal of Post-Etch Residues
Compositions and Methods for the Selective Removal of Silicon Nitride
Etching Agent for Copper or Copper Alloy
Aqueous Clean Solution with Low Copper Etch Rate for Organic Residue Removal Improvement
Application:
14/401,739 →
Publication:
US 2015/0114429
Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition
Antioxidants for Post-Cmp Cleaning Formulations
Patent:
46,427 →
Application:
14/595,758 →
Cleaning Agent for Semiconductor Provided with Metal Wiring
Copper Cleaning and Protection Formulations
Application:
14/792,090 →
Publication:
US 2016/0032221
Apparatus and Method for Stripping Solder Metals During the Recycling of Waste Electrical and Electronic Equipment
Application:
14/802,219 →
Publication:
US 2015/0321279
Apparatus and Method for Stripping Solder Metals During the Recycling of Waste Electrical and Electronic Equipment
Apparatus and Method for Stripping Solder Metals During the Recycling of Waste Electrical and Electronic Equipment
Aqueous Cleaning Composition Containing Copper-Specific Corrosion Inhibitor for Cleaning Inorganic Residues on Semiconductor Substrate
Application:
14/826,840 →
Publication:
US 2015/0344826
Compositions and Methods for the Selective Removal of Silicon Nitride
Compositions and Methods for Selectively Etching Titanium Nitride
Etching Agent for Copper or Copper Alloy
Method for Recycling of Obsolete Printed Circuit Boards
Sustainable Process for Reclaiming Precious Metals and Base Metals from E-Waste
Application:
14/993,614 →
Publication:
US 2016/0122846
Photoresist Removal
Application:
15/018,113 →
Publication:
US 2016/0152926
Non-Amine Post-Cmp Composition and Method of Use
Application:
15/137,552 →
Publication:
US 2016/0237385
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Release of Security Interest
Nov 8, 2018
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ATMI PACKAGING, INC.
Reel/Frame 047477/0032 →
Release of Security Interest
Nov 8, 2018
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ATMI PACKAGING, INC.
Reel/Frame 047477/0151 →
Security Interest
Nov 13, 2018
From: ENTEGRIS, INC.; SAES PURE GAS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 048811/0679 →
Assignment of Patent Security Interest Recorded at Reel/Frame 048811/0679
Nov 5, 2019
From: GOLDMAN SACHS BANK USA
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 050965/0035 →