Ammonium borate containing compositions for stripping residues from semiconductor substrates
View Patent ↗The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): an organic amine or mixture of amines 15-60 %, water 20-60 %, ammonium tetraborate or ammonium pentaborate 9-20 %, an optional polar organic solvent 0-15 %.
1. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
At least one organic amine
15-60%
Water
20-60%
An ammonium borate compound
9-20%.
2. A cleaning formulation as described in claim 1 wherein said ammonium borate compound is selected from the group consisting of ammonium tetraborate and ammonium pentaborate.
3. A cleaning formulation as described in claim 1 further including a polar organic solvent having a percentage by weight range of 0-15%.
4. A cleaning formulation as described in claim 2 further including a polar organic solvent having a percentage by weight range of 0-15%.
5. A cleaning formulation as described in claim 1 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA)
Pentamethyldiethylenetriamine (PMDETA)
Triethanolamine (TEA).
6. A cleaning formulation as described in claim 2 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA)
Pentamethyldiethylenetriamine (PMDETA)
Triethanolamine (TEA).
7. A cleaning formulation as described in claim 3 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA)
Pentamethyldiethylenetriamine (PMDETA)
Triethanolamine (TEA).
8. A cleaning formulation as described in claim 2 wherein said organic amine is selected from the group consisting of:
N-Methyldiethanolamine
Diglycolamine
Diethylethanolamine
Hydroxyethylmorpholine.
9. A cleaning formulation as described in claim 1 further including one or more of the compounds selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
10. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
TEA
35.2%
Ammonium tetraborate
11.4%
Water
39%
N-Methylpyrrolidone
14.3%.
11. A cleaning formulation as described in claim 10 further including one or more components selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
12. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
MEA
35%
Ammonium tetraborate
20%
Water
45%.
13. A cleaning formulation as described in claim 12 further including one or more components selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
14. A method for fabricating a semiconductor wafer including the steps comprising:
plasma etching a metalized layer from a surface of the wafer;
plasma ashing a resist from the surface of the wafer following the metal etching step;
cleaning the wafer in a following step using a chemical formulation including the following components in the percentage by weight ranges shown:
At least one organic amine
15-60%
Water
20-60%
An ammonium borate compound
9-20%.
15. A method described in claim 14 wherein said ammonium borate compound is selected from the group consisting of ammonium tetraborate and ammonium pentaborate.
16. A method as described in claim 14 further including a polar organic solvent having a percentage by weight range of 0-15%.
17. A method as described in claim 15 further including a polar organic solvent having a percentage by weight range of 0-15%.
18. A method as described in claim 14 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA)
Pentamethyldiethylenetriamine (PMDETA)
Triethanolamine (TEA).
19. A method as described in claim 15 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA)
Pentamethyldiethylenetriamine (PMDETA)
Triethanolamine (TEA).
20. A method as described in claim 16 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA)
Pentamethyldiethylenetriamine (PMDETA)
Triethanolamine (TEA).
21. A method as described in claim 15 wherein said organic amine is selected from the group consisting of:
N-Methyldiethanolamine
Diglycolamine
Diethylethanolamine
Hydroxyethylmorpholine.
22. A method as described in claim 14 further including one or more of the compounds selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
23. A method for fabricating a semiconductor wafer including the steps comprising:
plasma etching a metalized layer from a surface of the wafer;
plasma ashing a resist from the surface of the wafer following the metal etching step;
cleaning the wafer in a following step using a chemical formulation including the following components in the percentage by weight ranges shown:
TEA
35.2%
Ammonium tetraborate
11.4%
Water
39%
N-Methylpyrrolidone
14.3%.
24. A method as described in claim 23 wherein said formulation further includes one or more components selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
25. A method for fabricating a semiconductor wafer including the steps comprising:
plasma etching a metalized layer from a surface of the wafer;
plasma ashing a resist from the surface of the wafer following the metal etching step;
cleaning the wafer in a following step using a chemical formulation including the following components in the percentage by weight ranges shown:
MEA
35%
Ammonium tetraborate
20%
Water
45%.
26. A method as described in claim 25 wherein said formulation 19 further includes one or more components selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.