Photoresist removal
View Patent ↗Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
1. A cleaning solution comprising a strong base, an oxidant, and a polar solvent, wherein said oxidant comprises a species selected from the group consisting of an amine-N-oxide, a percarbonate salt, and a perborate salt, wherein the pH of the solution is greater than 11.5, and wherein said solution is useful for removing post-etch photoresist residue from a semiconductor substrate having same thereon.
2. The cleaning solution of claim 1 , wherein the amount of each component is
about 20 to about 95 wt % polar solvent;
about 0.1 to about 30 wt % strong base; and
about 1 to about 30 wt % oxidant.
3. The cleaning solution of claim 1 , wherein said polar solvent comprises a polar species selected from the group consisting of water, an alcohol, ethylene glycol, propylene glycol, glycol ethers thereof, an amide, and a carbonate.
4. The cleaning solution of claim 1 , wherein said polar solvent comprises water.
5. The cleaning solution of claim 1 , wherein the strong base comprises a nitrogen containing compound of the formula (NR 1 R 2 R 3 R 4 ) + OH − , wherein R 1 , R 2 , R 3 and R 4 are each one of hydrogen, alkyl or substituted aryl groups.
6. The cleaning solution of claim 1 , wherein said strong base comprises tetramethylammonium hydroxide.
7. The cleaning solution of claim 1 , wherein said oxidant comprises an amine-N-oxide.
8. The cleaning solution of claim 1 , wherein said amine-N-oxide has the formula:
wherein R 1 and R 2 may be hydrogen, methyl, further substituted or unsubstituted alkyl groups or may form two ends of an alkyl chain, and R 3 may be methyl, further substituted or unsubstituted alkyl groups or may form two ends of an alkyl chain.
9. The cleaning solution of claim 1 , wherein said amine-N-oxide comprises N-methylmorpholine-N-oxide.
10. The cleaning solution of claim 1 , wherein the solution comprises water, amine-N-oxide, and tetramethylammonium hydroxide.
11. The cleaning solution of claim 1 , wherein the solution comprises water, N-methylmorpholine-N-oxide, and tetramethylammonium hydroxide.
12. The cleaning solution of claim 11 , further comprising 2-mercaptobenzimidazole.
13. The cleaning solution of claim 1 , further comprising at least one chelator selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, benzotriazole, polyltriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 1-amino-1,2,3-triazole, 1-amino-1,2,4-triazole, 1-amino-5-methyl-1,2,3-triazole, hydroxybenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 3-amino-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 5-phenylthiol-benzotriazole, halo-benzotriazoles, napthotriazole, 2-mercaptobenzoimidizole, 2-mercaptobenzothiazole, 5-aminotetrazole, 5-amino-1,3,4-triadiazole-2-thiol, thiazole, triazine, methyltetrazole, 1,3-dimethyl-2-imidazolidinone, 1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, diaminomethyltriazine, mercaptobenzothiazole, imidazoline thione, mercaptobenzoimidazole, 4-methyl-4H-1,2,4-triazole-3-thiol, benzothiazole, tritolyl phosphate, indiazole, guanine, adenine, glycerol, thioglycerol, nitrilotriacetic acid, salicylamide, iminodiacetic acid, benzoguanamine, melamine, thiocyranuric acid, anthranilic acid, 8-hydroxyquinoline, 5-carboxylic acid-benzotriazole, 3-mercaptopropanol, boric acid, and iminodiacetic acid.
14. The cleaning solution of claim 1 , further comprising a co-solvent, wherein said co-solvent is one of an alkylamine, an alkanolamine, a glycol, and a glycol ether.
15. The cleaning solution of claim 1 , further comprising a surfactant.
16. A method to remove post-etching photoresist residue from a semiconductor substrate comprising contacting the semiconductor substrate with a cleaning solution for a sufficient amount of time to effect substantial cleaning of the semiconductor substrate, wherein the cleaning solution comprises a strong base, an oxidant, and a polar solvent, wherein said oxidant comprises a species selected from the group consisting of an amine-N-oxide, a percarbonate salt, and a perborate salt, and wherein the pH of the solution is greater than 11.5.
17. The method of claim 16 , wherein said polar solvent comprises a polar species selected from the group consisting of water, an alcohol, ethylene glycol, propylene glycol, glycol ethers thereof, an amide, and a carbonate.
18. The method of claim 16 , wherein the strong base comprises a nitrogen containing compound of the formula (NR 1 R 2 R 3 R 4 ) + OH − , wherein R 1 , R 2 , R 3 and R 4 are each one of hydrogen, alkyl or substituted aryl groups.
19. The method of claim 16 , wherein said oxidant comprises an amine-N-oxide.
20. The method of claim 19 , wherein said amine-N-oxide has the formula:
wherein R 1 and R 2 may be hydrogen, methyl, further substituted or unsubstituted alkyl groups or may form two ends of an alkyl chain, and R 3 may be methyl, further substituted or unsubstituted alkyl groups or may form two ends of an alkyl chain.