Chemical mechanical planarization pad
View Patent ↗A Chemical Mechanical Planarization (CMP) Pad. The CMP pad may be hydrophobic due to the incorporation of metal complexing agents. The CMP pad substantially retaining planarization characteristics throughout planarization applications. Shearing, hardness, wearing, water absorption and electrical characteristics of the CMP pad remain substantially constant during CMP applications.
1. A hydrophobic chemical mechanical planarization (HCMP) material comprising an organic polymer and a metal agent, wherein the metal agent includes at least one β-diketonate ligand and one of cobalt, palladium, nickel, titanium, zirconium, hafnium, and copper, and wherein the HCMP material is useful for planarization of a semiconductor wafer.
2. The HCMP material of claim 1 wherein said organic polymer is formed from a urethane.
3. The HCMP material of claim 2 wherein said urethane is formed of a polyol and a di-isocyanate or is polyester based.
4. The HCMP material of claim 2 wherein said urethane is reactive with one of a polyfunctional amine, a diamine, a triamine, a polyfunctional hydroxyl, and a mixed functionality hydroxylamine.
5. The HCMP material of claim 1 further comprising a polymeric matrix material selected from the group consisting of a urethane, a melamine, a polyester, a polysulfone, polyvinyl acetate, a fluorinated hydrocarbon, and mixtures and copolymers thereof.
6. The HCMP material of claim 1 further comprising a foaming and curing agent.
7. The HCMP material of claim 1 wherein the β-diketonate ligand includes a side group selected from hydrogen, an aryl, a perfluoraryl, an alkyl, a perfluoroalkyl, and a t-butyl group.
8. The HCMP material of claim 1 wherein the metal agent further includes at least one additional ligand comprising the formula —OR, wherein R is selected from the group consisting of hydrogen, an aryl, an alkyl, a perfluoroaryl, a perfluoroalkyl, and combinations thereof.
9. The HCMP material of claim 1 wherein said metal agent includes a metal compatible with a metal of the semiconductor wafer.
10. The HCMP material of claim 1 , wherein said material substantially avoids uptake of aqueous slurry during the planarization.
11. A hydrophobic chemical mechanical planarization (HCMP) pad comprising the HCMP material of claim 1 .
12. A method of forming a chemical mechanical planarization (CMP) material, said method comprising mixing an organic polymer and a metal agent to form the CMP material, wherein the metal agent includes at least one β-diketonate ligand, and wherein the metal agent includes one of cobalt, palladium, nickel, titanium, zirconium, hafnium, and copper.
13. The method of claim 12 further comprising:
adding a foaming agent and a curing agent to the CMP material;
reducing pressure around the CMP material; and
heating the CMP material to form a log of the CMP material.
14. The method of claim 13 , further comprising adding an inert gas to the CMP material.
15. The method of claim 13 further comprising obtaining a hydrophobic CMP pad from the log formed of the CMP material.
16. The method of claim 12 , wherein the metal agent is dissolved in an organic solvent.
17. The method of claim 12 , wherein the CMP material comprises pores.
18. The method of claim 12 , wherein the β-diketonate ligand includes a side group selected from hydrogen, an aryl, a perfluoraryl, an alkyl, a perfluoroalkyl, and a t-butyl group.
19. The method of claim 12 , wherein the metal agent further includes at least one additional ligand comprising the formula —OR, wherein R is selected from the group consisting of hydrogen, an aryl, an alkyl, a perfluoroaryl, a perfluoroalkyl, and combinations thereof.
20. A method of fabricating a semiconductor device, said method comprising:
providing a HCMP material according to claim 1 ; and
planarizing the semiconductor device with the HCMP material during the fabrication of said device.