Composition and process for wet stripping removal of sacrificial anti-reflective material
View Patent ↗A composition and process for wet stripping removal of sacrificial anti-reflective silicate material, e.g., from a substrate or article having such material deposited thereon, particularly where the sacrificial anti-reflective material is present with permanent silicate materials desired to be unaffected by the wet stripping composition.
1. A wet stripping composition selected from the group consisting of Formulations A-H:
Formulation A
0.5% IDA
1.0% NH 4 F
98.5% mixture 3:1 propyleneglycol:water
Formulation B
1.5% IDA
1.0% NH 4 F
97.5% mixture 3:1 propyleneglycol:water
Formulation C
0.5% IDA
4.0% NH 4 F
95.5% mixture 3:1 propyleneglycol:water
Formulation D
1.5% IDA
4.0% NH 4 F
94.5% mixture 3:1 propyleneglycol:water
Formulation E
0.5% IDA
1.0% NH 4 F
25% water
73.5% diethylene glycol
Formulation F
0.5% IDA
1.0% NH4F
25% water
73.5% propylene glycol methyl ether
Formulation G
0.5% IDA
1.0% NH4F
25% water
73.5% diethylene glycol methyl ether
Formulation H
0.5% IDA
1.0% NH4F
25% water
73.5% triethylene glycol methyl ether
wherein percentages of components in said Formulations are by weight, based on total weight of the Formulation.
2. The wet stripping composition of claim 1 , comprising Formulation A.
3. The wet stripping composition of claim 1 , comprising Formulation B.
4. The wet stripping composition of claim 1 , comprising Formulation C.
5. The wet stripping composition of claim 1 , comprising Formulation D.
6. The wet stripping composition of claim 1 , comprising Formulation E.
7. The wet stripping composition of claim 1 , comprising Formulation F.
8. The wet stripping composition of claim 1 , comprising Formulation G.
9. The wet stripping composition of claim 1 , comprising Formulation H.
10. A method of etchingly removing sacrificial silicate material from a locus comprising same, comprising exposing said sacrificial silicate material to an etchant composition, wherein said etchant composition is selected from the group consisting of Formulations A-H:
Formulation A
0.5% IDA
1.0% NH 4 F
98.5% mixture 3:1 propyleneglycol:water
Formulation B
1.5% IDA
1.0% NH 4 F
97.5% mixture 3:1 propyleneglycol:water
Formulation C
0.5% IDA
4.0% NH 4 F
95.5% mixture 3:1 propyleneglycol:water
Formulation D
1.5% IDA
4.0% NH 4 F
94.5% mixture 3:1 propyleneglycol:water
Formulation B
0.5% IDA
1.0% NH 4 F
25% water
73.5% diethylene glycol
Formulation F
0.5% IDA
1.0% NH4F
25% water
73.5% propylene glycol methyl ether
Formulation G
0.5% IDA
1.0% NH4F
25% water
73.5% diethylene glycol methyl ether
Formulation H
0.5% IDA
1.0% NH4F
25% water
73.5% triethylene glycol methyl ether
wherein percentages of components in said Formulations are by weight, based on total weight of the Formulation.
11. The method of claim 10 , wherein the locus comprises a semiconductor device structure.
12. The method of claim 11 , wherein said semiconductor device structure comprises an ILD material.
13. The method of claim 12 , wherein the sacrificial silicate material comprises a sacrificial anti-reflective coating.
14. The method of claim 13 , wherein the sacrificial anti-reflective coating comprises a dyed silicate glass material.
15. The method of claim 14 , wherein the dyed silicate glass material has been applied to a semiconductor device structure to minimize reflectivity variations during photolithographic patterning on the semiconductor device structure.
16. A wet stripping composition, comprising:
a nitrogenous hydrofluoride;
deionized water;
organic solvent;
chelator; and
optionally an amine/carboxylic acid buffer;
wherein said chelator comprises an α-amino acid.
17. A wet stripping composition comprising semi-aqueous solvent, ammonium fluoride and an amino acid conferring on said composition etch rate selectivity between SARC and ILD material, wherein the amino acid comprises iminodiacetic acid.
18. A method of etchingly removing sacrificial silicate material from a locus comprising same, comprising exposing said sacrificial silicate material to an etchant composition, wherein said etchant composition comprises:
a nitrogenous hydrofluoride;
deionized water;
organic solvent;
chelator; and
optionally an amine/carboxylic acid buffer;
wherein said chelator comprises an α-amino acid.
19. The method of claim 18 , wherein the locus comprises a semiconductor device structure.
20. The method of claim 19 , wherein said semiconductor device structure comprises an ILD material.
21. The method of claim 18 , wherein the sacrificial silicate material comprises a sacrificial anti-reflective coating.
22. The method of claim 21 , wherein the sacrificial anti-reflective coating comprises a dyed silicate glass material.
23. The method of claim 22 , wherein the dyed silicate glass material has been applied to a semiconductor device structure to minimize reflectivity variations during photolithographic patterning on the semiconductor device structure.