Orientation-independent multi-layer BEOL capacitor
View Patent ↗A plurality of interdigitized conductive fingers are arranged to form a substantially square configuration in each of a plurality of layers separated by a high dielectric constant material, wherein each of the plurality of interdigitized conductive fingers includes at least one bend of substantially ninety degrees. The plurality of interdigitized conductive fingers includes a first set of fingers that are connected to an anode terminal, and a second set of fingers that are connected to a cathode terminal. The plurality of layers includes a bottommost layer that is in closest proximity to a substrate relative to other layers of the plurality of layers. The bottommost layer does not include any fingers connected to the anode terminal.
1. A multi-layered capacitor comprising:
a plurality of interdigitized conductive fingers forming a substantially square configuration in a plurality of layers separated by a high dielectric constant material, wherein the plurality of interdigitized conductive fingers includes at least one bend of substantially ninety degrees; a first set of fingers that are connected to an anode terminal; and a second set of fingers that are connected to a cathode terminal; and wherein the plurality of layers includes a bottommost layer that is in closest proximity to a substrate relative to other layers of the plurality of layers, wherein the bottommost layer includes the second set of fingers connected to the cathode terminal, but does not include any fingers connected to the anode terminal such that an electric field emitted from the first set of fingers above the bottommost layer are diverted from entering the substrate by the second set of fingers located in the bottommost layer.
2. The multi-layered capacitor of claim 1 wherein each of the layers is fabricated of a low dielectric constant material.
3. The multi-layered capacitor of claim 1 wherein the conductive fingers are formed using a low resistance conductive material comprising one or more metals or metal-containing alloys.
4. The multi-layered capacitor of claim 1 wherein each layer of the plurality of layers is separated from at least one other layer of the plurality of layers by a high dielectric constant material.
5. The multi-layered capacitor of claim 4 wherein the high dielectric constant material includes at least one of tantalum pentoxide and silicon nitride.
6. The multi-layered capacitor of claim 2 wherein the low dielectric constant material includes at least one of fluorinated glass, aerogel, silk, or hydrogen silsesquioxane (HSQ).
7. The multi-layered capacitor of claim 3 wherein the low-resistance conductive material includes at least one of aluminum or copper.
8. The multi-layered capacitor of claim 7 wherein the low-resistance conductive material comprises copper provided by a damascene BEOL process.