Pressure sensor adjustment using backside mask
Methods and apparatus for an absolute or gauge pressure sensor having a backside cavity with a substantially vertical interior sidewall. The backside cavity is formed using a DRIE etch or other MEMS micro-machining technique. The backside cavity has an opening that is cross shaped, where the dimensions of the cross may be varied to adjust pressure sensor sensitivity. The cross may have one or more rounded corners to reduce peak stress, for example, the interior corners may be rounded. A sensing conductor may be routed over one or more corners including the interior corners to detect breakage.
1. A pressure sensor comprising:
a diaphragm and a sidewall, the sidewall having an interior side defining a backside cavity, the backside cavity extending from a portion of an insulator layer directly in contact with the diaphragm to a backside opening,
wherein the interior side of the sidewall is formed using a deep reactive ion etch and is substantially orthogonal to the diaphragm,
wherein the deep reactive ion etch begins at the backside opening and etches towards the diaphragm at a rate that is substantially reduced when the insulator layer is reached, and
wherein the backside opening forms a cross shape.
2. The pressure sensor of claim 1 wherein the interior corners of the cross are rounded.
3. The pressure sensor of claim 1 further comprising:
a conductor over at least one of the interior corners of the cross.
4. The pressure sensor of claim 1 further comprising:
a conductor over an interior corner of the cross,
wherein the interior corners of the cross are rounded.
5. The pressure sensor of claim 1 further comprising:
a block covering the backside opening such that a hermetic seal is formed.
6. The pressure sensor of claim 5 wherein the block is silicon.
7. The pressure sensor of claim 5 wherein the block is glass.
8. The pressure sensor of claim 7 wherein the glass block is covered with metal over the backside opening.
9. The pressure sensor of claim 1 wherein the pressure sensor is included in a tire pressure monitor system.
10. The pressure sensor of claim 1 wherein the pressure sensor is included in an electronic system selected from the group consisting of an electronic watch, a dive computer, and a cell phone.
11. A pressure sensor comprising:
a first silicon layer comprising a diaphragm;
an insulator layer below the first silicon layer;
a second silicon layer below the insulator layer and having a backside cavity defined by a sidewall, a backside opening, and a portion of the insulator layer below and directly in contact with the diaphragm,
wherein the backside cavity is formed using a deep reactive ion etch and the sidewall is substantially orthogonal to the diaphragm,
wherein the backside opening forms a cross shape.
12. The pressure sensor of claim 11 wherein the interior corners of the cross are rounded.
13. The pressure sensor of claim 11 further comprising:
a conductor over at least one of the interior corners of the cross.
14. The pressure sensor of claim 11 further comprising:
a conductor over an interior corner of the cross,
wherein the interior corners of the cross are rounded.
15. The pressure sensor of claim 11 further comprising:
a block covering the backside opening such that a hermetic seal is formed.
16. The pressure sensor of claim 15 wherein the block is silicon.
17. The pressure sensor of claim 15 wherein the block is glass.
18. The pressure sensor of claim 17 wherein the glass block is covered with metal over the backside opening.
19. The pressure sensor of claim 11 wherein the pressure sensor is included in a tire pressure monitor system.
20. The pressure sensor of claim 19 wherein the tire pressure monitor wirelessly transmits pressure data.
21. The pressure sensor of claim 19 wherein the pressure sensor is fabricated on the same silicon chip as an acceleration sensor.
22. The pressure sensor of claim 11 wherein the pressure sensor is included in an electronic system selected from the group consisting of an electronic watch, a dive computer, and a cell phone.
23. A pressure sensor comprising:
a first silicon layer having a top side and a bottom side and comprising a diaphragm;
an insulator layer having a top side and a bottom side, the top side in contact with the bottom side of the first silicon layer;
a second silicon layer having a top side and a bottom side, the top side in contact with the bottom side of the insulator layer and having a backside cavity defined by a sidewall, a portion of the bottom side of the insulator layer, and a backside opening in the bottom side of the second silicon layer,
wherein the backside cavity is formed using a deep reactive ion etch and the sidewall is substantially orthogonal to the diaphragm,
wherein the backside opening forms a cross shape.
24. The pressure sensor of claim 23 wherein the interior corners of the cross are rounded.
25. The pressure sensor of claim 23 further comprising:
a conductor over at least one of the interior corners of the cross.
26. The pressure sensor of claim 23 further comprising:
a conductor over an interior corner of the cross,
wherein the interior corners of the cross are rounded.
27. The pressure sensor of claim 23 wherein the pressure sensor is included in a tire pressure monitor system.
28. The pressure sensor of claim 23 wherein the pressure sensor is included in an electronic system selected from the group consisting of an electronic watch, a dive computer, and a cell phone.