Semiconductor chip with stratified underfill
View Patent ↗Various semiconductor chip underfills and methods of making the same are provided. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip to a substrate to leave a gap therebetween, and forming an underfill layer in the gap. The underfill layer includes a first plurality of filler particles that have a first average size and a second plurality of filler particles that have a second average size smaller than the first average size such that the first plurality of filler particles is concentrated proximate the substrate and the second plurality of filler particles is concentrated proximate the semiconductor chip so that a bulk modulus of the underfill layer is larger proximate the substrate than proximate the semiconductor chip.
1. A method of manufacturing, comprising:
coupling a semiconductor chip to a substrate to leave a gap therebetween; and
forming an underfill layer in the gap, the underfill layer including a first plurality of filler particles having a first average density and a second plurality of filler particles having a second average density lower than the first average density such that the first plurality of filler particles being concentrated proximate the substrate and the second plurality of filler particles being concentrated proximate the semiconductor chip so that a bulk modulus of the underfill layer being larger proximate the substrate than proximate the semiconductor chip.
2. The method of claim 1 , wherein the forming the underfill layer comprises depositing a polymeric resin and wherein the first plurality of filler particles comprises alumina and the second plurality of filler particles comprise silica.
3. The method of claim 1 , wherein the forming the underfill layer comprises depositing a polymeric resin and wherein the first and second pluralities of filler particles comprise round particles.
4. The method of claim 1 , wherein the coupling a semiconductor chip comprises coupling a microprocessor.
5. A method of manufacturing, comprising:
forming a partially cured polymeric material layer having first bulk modulus on a surface of a semiconductor chip;
coupling the semiconductor chip to a substrate with the partially cured polymeric material facing towards the substrate to leave a gap therebetween; and
forming an underfill layer in the gap between the partially cured polymeric material, the underfill layer including a plurality of filler particles providing the underfill layer with a second bulk modulus larger than the first bulk modulus of the partially cured polymeric material layer.
6. The method of claim 5 , wherein the forming the underfill layer comprises depositing a polymeric resin and wherein the plurality of filler particles comprises alumina, silica, diamond or sapphire.
7. The method of claim 5 , wherein the forming the underfill layer comprises depositing a polymeric resin and wherein the plurality of filler particles comprises round particles.
8. The method of claim 5 , wherein the coupling a semiconductor chip comprises coupling a microprocessor.
9. An apparatus, comprising:
a semiconductor chip coupled to a substrate; and
an underfill layer between the semiconductor chip and the substrate, the underfill layer including a first plurality of filler particles having a first average density and a second plurality of filler particles having a second average density lower than the first average density such that the first plurality of filler particles being concentrated proximate the substrate and the second plurality of filler particles being concentrated proximate the semiconductor chip so that a bulk modulus of the underfill layer being larger proximate the substrate than proximate the semiconductor chip.
10. The apparatus of claim 9 , wherein the underfill layer comprises a polymeric resin and wherein the first plurality of filler particles comprises alumina and the second plurality of filler particles comprises silica.
11. The apparatus of claim 9 , wherein the underfill layer comprises a polymeric resin and wherein the first and second pluralities of filler particles comprise round particles.
12. The apparatus of claim 9 , wherein the semiconductor chip comprises a microprocessor.
13. An apparatus, comprising:
forming a partially cured polymeric material layer having first bulk modulus on a surface of a semiconductor chip;
semiconductor chip coupled to a substrate; and
an underfill layer between the semiconductor chip and the substrate, the underfill layer having a first layer proximate the semiconductor chip and having a first bulk modulus, and a second layer proximate the substrate including a plurality of filler particles providing the second layer with a second bulk modulus larger than the first bulk modulus of the first layer.
14. The apparatus of claim 13 , wherein the second layer comprises a polymeric resin and wherein the plurality of filler particles comprises alumina, silica, diamond or sapphire.
15. The apparatus of claim 13 , wherein the semiconductor chip comprises a microprocessor.
16. A method of manufacturing, comprising:
coupling a semiconductor chip to a substrate to leave a gap therebetween; and
forming an underfill layer in the gap, the underfill layer including a first portion proximate the substrate that has a first coefficient of thermal expansion and a majority concentration of first filler particles with a first average size, and a second portion proximate the semiconductor chip that has a second coefficient of thermal expansion greater than the first coefficient of thermal expansion and a majority concentration of second filler particles with a second average size smaller than the first average size.
17. The method of claim 16 , wherein the forming the underfill layer comprises depositing a polymeric resin and wherein the first and second filler particles comprise silica particles.
18. The method of claim 16 , wherein the forming the underfill layer comprises depositing a polymeric resin and wherein the first and second filler particles comprise round particles.
19. The method of claim 16 , wherein the coupling a semiconductor chip comprises coupling a microprocessor.
20. An apparatus, comprising:
a semiconductor chip coupled to a substrate; and
an underfill layer between the semiconductor chip and the substrate, the underfill layer including a first portion proximate the substrate that has a first coefficient of thermal expansion and a majority concentration of first filler particles with a first average size, and a second portion proximate the semiconductor chip that has a second coefficient of thermal expansion greater than the first coefficient of thermal expansion and a majority concentration of second filler particles with a second average size smaller than the first average size.
21. The apparatus of claim 20 , wherein the underfill layer comprises a polymeric resin and wherein the first and second filler particles comprise silica particles.
22. The apparatus of claim 20 , wherein the underfill layer comprises a polymeric resin and wherein the first and second filler particles comprise round particles.
23. The apparatus of claim 20 , wherein the semiconductor chip comprises a microprocessor.