IP Library Granted Patent US 8,493,296
Granted Patent B2
US 8,493,296 · App. 11/849,825 · Granted Jul 23, 2013

Method of inspecting defect for electroluminescence display apparatus, defect inspection apparatus, and method of manufacturing electroluminescence display apparatus using defect inspection method and apparatus

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Quick Facts
Patent No.
US 8,493,296
App. No.
11/849,825
Granted
Jul 23, 2013
Kind
B2
Abstract

A dark spot defect of an EL element is detected based on an emission brightness or a current flowing through the EL element when an element driving transistor which controls a drive current to be supplied to the EL element is operated in its linear operating region and the EL element is set to an emission level. A dim spot defect caused can be detected based on a current flowing through the EL element when the element driving transistor is operated in its saturation operating region and the EL element is set to the emission level. When an abnormal display pixel is detected based on an emission brightness, a pixel which is determined as an abnormal display pixel and which is not determined as a dark spot defect is determined, and the pixel is detected as a dim spot defect caused by the characteristic variation of the element driving transistor.

Claims (32)

1. A method of inspecting a defect for an electroluminescence display apparatus, wherein

the display apparatus comprises, in each pixel, an electroluminescence element and an element driving transistor which is connected to the electroluminescence element and which controls a current flowing through the electroluminescence element, the method comprising:

supplying a first inspection ON display signal, which sets the electroluminescence element to an emission level, to each pixel;

operating the element driving transistor in a saturation operating region of the transistor;

observing an emission state of the electroluminescence element;

identifying a pixel having an emission brightness which is smaller than a reference brightness as an abnormal display defect pixel while the element driving transistor is operated in a saturation operating region of the transistor;

supplying a second inspection ON display signal, which sets the electroluminescence element to an emission level, to each pixel;

operating the element driving transistor in a linear operating region of the transistor;

observing an emission state of the electroluminescence element;

identifying a non-emission pixel as a dark spot defect pixel caused by the electroluminescence element; and

identifying a pixel which is identified as the abnormal display defect pixel and which is not identified as the dark spot defect pixel as a dim spot defect pixel caused by the element driving transistor.

2. The method of inspecting a defect for an electroluminescence element according to claim 1 , wherein

the detection of the dark spot defect pixel is executed after a reverse bias voltage is applied to the electroluminescence element of each pixel.

3. A method of manufacturing an electroluminescence display apparatus, wherein

a laser repairing is executed, on the dark spot defect pixel detected by the defect inspection method according to claim 1 , in which laser light is selectively irradiated on a short-circuited region between an anode and a cathode of the electroluminescence element of the pixel and a current path in the short-circuited region is cut.

4. A method of manufacturing an electroluminescence display apparatus, wherein

ultraviolet light is irradiated, on the dim spot defect pixel detected by the inspection method according to claim 1 , while a predetermined bias is applied to the element driving transistor of the pixel, to repair a shift of a current supplying characteristic of the element driving transistor.

5. A defect inspection apparatus for an electroluminescence display apparatus which comprises, in each pixel, an electroluminescence element having a diode structure and an element driving transistor which is connected to the electroluminescence element and which controls a current flowing through the electroluminescence element, the defect inspection apparatus comprising:

a power supply generation section which generates a plurality of power supplies to be supplied to each pixel during defect inspection;

a power supply switching section which switches a power supply to be supplied to the pixel in order to switch and control an operation of the element driving transistor in a saturation operating region and in a linear operating region according to a defect inspection mode;

an inspection signal generation section which generates an inspection timing signal and an inspection ON display signal;

an emission detecting section which detects an emission state of the electroluminescence element; and

a defect determining section, wherein

in an abnormal display inspection mode,

with a power supply for dim spot inspection selected by the power supply switching section and the timing signal, the element driving transistor is operated in a saturation operating region of the transistor and an inspection ON display signal which sets the electroluminescence element to an emission level is supplied to a corresponding pixel,

the emission detecting section detects an emission brightness of the electroluminescence element, and

the defect determining section compares the detected emission brightness to a reference brightness and determines a pixel having the emission brightness which is smaller than the reference brightness as an abnormal display defect pixel,

in a dark spot inspection mode,

with a power supply for dark spot inspection selected by the power supply switching section and the timing signal, the element driving transistor is operated in a linear operating region of the transistor and a dark spot inspection ON display signal which sets the electroluminescence element to an emission level is supplied to a corresponding pixel,

the emission detecting section detects an emission brightness of the electroluminescence element, and

the defect determining section compares the detected emission brightness to a reference brightness and determines a pixel having the emission brightness which is smaller than the reference brightness as a dark spot defect pixel caused by the electroluminescence element, and

in a dim spot inspection mode, the defect determining section determines a pixel which is detected as the abnormal display defect pixel and which is not detected as the dark spot defect pixel as a dim spot defect pixel caused by the element driving transistor.

Assignments (8)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 23, 2016
From: SYSTEM SOLUTIONS CO., LTD.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038994/0667 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
CHANGE OF NAME Recorded Feb 19, 2016
From: SANYO SEMICONDUCTOR CO., LTD.
To: SYSTEM SOLUTIONS CO., LTD.
Reel/Frame 037773/0090 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT #12/577882 PREVIOUSLY RECORDED ON REEL 026594 FRAME 0385. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded May 6, 2014
From: SANYO ELECTRIC CO., LTD
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 032836/0342 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2011
From: SANYO ELECTRIC CO., LTD.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 026594/0385 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2007
From: OGAWA, TAKASHI
To: SANYO ELECTRIC CO., LTD.; SANYO SEMICONDUCTOR CO., LTD.
Reel/Frame 020211/0989 →