IP Library Granted Patent US 7,423,416
Granted Patent B1
US 7,423,416 · App. 11/853,939 · Granted Sep 9, 2008

Voltage regulator and method for providing a regulated output

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Quick Facts
Patent No.
US 7,423,416
App. No.
11/853,939
Granted
Sep 9, 2008
Kind
B1
Abstract

A voltage regulator includes first and second MOS transistors and a bipolar transistor. The first MOS transistor has a first conductivity type and has a drain coupled to a first power supply voltage terminal, a gate for receiving a first bias voltage, and a source. The second MOS transistor has a second conductivity type and has a source coupled to the first power supply voltage terminal, a drain coupled to the source of the first MOS transistor, and a gate for receiving a second bias voltage. The bipolar transistor has a collector coupled to the source of the first MOS transistor, a base for receiving a third bias voltage, and an emitter for providing an output voltage. The first MOS transistor and the second MOS transistor control a voltage level at the collector of the bipolar transistor in response to a varying power supply voltage provided to the first power supply voltage terminal.

Claims (45)

1. A voltage regulator comprising:

a first metal oxide semiconductor (MOS) transistor having a first conductivity type, the first MOS transistor having a drain coupled to a first power supply voltage terminal, a gate for receiving a first bias voltage, and a source;

a second MOS transistor having a second conductivity type different than the first conductivity type, the second MOS transistor having a source coupled to the first power supply voltage terminal, a drain coupled to the source of the first MOS transistor, and a gate for receiving a second bias voltage;

a bipolar transistor having a collector coupled to the source of the first MOS transistor, a base for receiving a third bias voltage, and an emitter for providing an output voltage; and

a first current source having a first terminal coupled to the emitter of the bipolar transistor, and a second terminal coupled to a second power supply voltage terminal;

wherein the first MOS transistor and the second MOS transistor control a voltage level at the collector of the bipolar transistor in response to a varying power supply voltage provided to the first power supply voltage terminal.

2. The voltage regulator of claim 1 , wherein a conductance of the second MOS transistor, as determined by the second bias voltage, at least partially controls a conductance of the first MOS transistor.

3. The voltage regulator of claim 1 , further comprising:

a second current source having a first terminal coupled to the first power supply voltage terminal, and a second terminal coupled to the gate of the first MOS transistor for providing the first bias voltage; and

a voltage reference having a first terminal coupled to the gate of the first MOS transistor, and a second terminal coupled to the second power supply voltage terminal.

4. The voltage regulator of claim 3 , wherein the voltage reference comprises a zener diode.

5. The voltage regulator of claim 1 , further comprising a comparator having a first input for receiving an input voltage, a second input for receiving a reference voltage, and an output for controlling the second bias voltage.

6. The voltage regulator of claim 5 , wherein the input voltage is provided by a voltage divider coupled between the first and second power supply voltage terminals.

7. The voltage regulator of claim 1 , further comprising:

a second current source having a first terminal coupled to the first power supply voltage terminal, and a second terminal coupled to the base of the bipolar transistor for providing the third bias voltage; and

a voltage reference having a first terminal coupled to the base of the bipolar transistor, and a second terminal coupled to the second power supply voltage terminal.

8. The voltage regulator of claim 1 , further comprising:

a third transistor having a source coupled to the first power supply voltage terminal, a gate for receiving a fourth bias voltage, and a drain coupled to the emitter of the bipolar transistor; and

an input voltage transfer function having a first input for receiving an input voltage, a second input for receiving a reference voltage, and an output for controlling the fourth bias voltage.

9. A voltage regulator comprising:

an output transistor having a first current electrode, a second current electrode coupled to an output terminal for providing a regulated output voltage, and a control electrode for receiving a first bias voltage;

a first transistor having a first current electrode coupled to a first power supply voltage terminal, a second current electrode coupled to the first current electrode of the output transistor, and a control electrode for receiving a second bias voltage, wherein the second bias voltage is clamped to a predetermined maximum voltage to protect the output transistor from a voltage higher than the output transistor can withstand;

a second transistor having a first current electrode coupled to the first power supply voltage terminal, a second current electrode coupled to the first current electrode of the first transistor, and a control electrode for receiving a third bias voltage, wherein the second transistor for supplying a voltage to the output transistor within a predetermined voltage range; and

a third transistor having a first current electrode coupled to the first power supply voltage terminal, a second current electrode coupled to the output terminal, and a control electrode for receiving a fourth bias voltage, wherein the fourth bias voltage for causing the third transistor to provide additional drive strength when a power supply voltage at the first power supply terminal is below the predetermined voltage range.

10. The voltage regulator of claim 9 , further comprising a current source having a first terminal coupled to the second current electrode of the output transistor, and a second terminal coupled to a second power supply voltage terminal.

11. The voltage regulator of claim 9 , further comprising:

a current source having a first terminal coupled to the first power supply voltage terminal, and a second terminal coupled to the control electrode of the output transistor; and

a voltage reference having a first terminal coupled to the second terminal of the current source, and a second terminal coupled to a second power supply voltage terminal, wherein the current source and voltage reference are for providing the first bias voltage.

12. The voltage regulator of claim 9 , further comprising:

a current source having a first terminal coupled to the first power supply voltage terminal, and a second terminal coupled to the control electrode of the first transistor; and

a voltage reference having a first terminal coupled to the second terminal of the current source, and a second terminal coupled to a second power supply voltage terminal, wherein the current source and voltage reference are for providing the second bias voltage.

13. The voltage regulator of claim 9 , further comprising a comparator having an input for receiving an input voltage, a second input for receiving a reference voltage, and an output for controlling the third bias voltage.

14. The voltage regulator of claim 13 , further comprising a level shifter having an input terminal coupled to the output of the comparator, and an output terminal coupled to the control electrode of the second transistor.

15. The voltage regulator of claim 9 , further comprising an input voltage transfer function having a first input for receiving an input voltage, a second input for receiving a reference voltage, and an output for controlling the fourth bias voltage.

16. The voltage regulator of claim 9 , wherein the voltage regulator is used to regulate a supply voltage provided to circuitry on an integrated circuit.

17. The voltage regulator of claim 9 , wherein the output transistor is characterized as being a bipolar transistor, the first transistor is characterized as being an N-channel transistor, and the second and third transistors are characterized as being P-channel transistors.

18. A method for providing a regulated output voltage, the method comprising:

providing an output transistor and first and second transistors, the output transistor having a first current electrode, a second current electrode coupled to an output terminal for providing the regulated output voltage, and a control electrode, the first transistor having a first current electrode coupled to a first power supply voltage terminal, a second current electrode coupled to the first current electrode of the output transistor, and a control electrode, and a second transistor having a first current electrode coupled to the first power supply voltage terminal, a second current electrode coupled to the first current electrode of the first transistor, and a control electrode;

biasing the control electrode of the output transistor with a first bias voltage;

biasing the control electrode of the first transistor with a second bias voltage, the second bias voltage being clamped to a predetermined maximum voltage to protect the output transistor from a voltage higher than the output transistor can withstand; and

biasing the control electrode of the second transistor with a third bias voltage, the third bias voltage for supplying a voltage to the output transistor within a predetermined voltage range.

19. The method of claim 18 , further comprising

providing a third transistor having a first current electrode coupled to the first power supply voltage terminal, a second current electrode coupled to the output terminal, and a control electrode; and

biasing the control electrode of the third transistor with a fourth bias voltage, the fourth bias voltage for causing the third transistor to provide additional drive strength when a power supply voltage at the first power supply voltage terminal is below the predetermined voltage range.

20. The method of claim 18 , wherein providing an output transistor and first and second transistors further comprises providing a bipolar output transistor and metal oxide semiconductor (MOS) first and second transistors.

Assignments (18)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE LISTED CHANGE OF NAME SHOULD BE MERGER AND CHANGE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0180. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 12, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 041354/0148 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040652/0180 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
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SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
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To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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