Semiconductor package adapted for high-speed data processing and damage prevention of chips packaged therein and method for fabricating the same
View Patent ↗A semiconductor package includes a semiconductor chip provided with a first surface having a bonding pad, a second surface opposing to the first surface and side surfaces; a first redistribution pattern connected with the bonding pad and extending along the first surface from the bonding pad to an end portion of the side surface which meets with the second surface; and a second redistribution pattern disposed over the first redistribution pattern and extending from the side surfaces to the first surface. In an embodiment of the present invention, in which the first redistribution pattern connected with the bonding pad is formed over the semiconductor chip and the second redistribution pattern is formed over the first redistribution pattern, it is capable of reducing a length for signal transfer since the second redistribution pattern is used as an external connection terminal. It is also capable of processing data with high speed, as well as protecting the semiconductor chip having weak brittleness, since the semiconductor package is connected to the substrate without a separate solder ball.
1. A semiconductor package comprising:
a semiconductor chip formed with a first surface, a second surface opposing the first surface, and side surfaces connected to the first and second surfaces, the semiconductor chip having a bonding pad formed on the first surface;
a first redistribution pattern connected to the bonding pad and elongated over the first surface and one of the side surfaces extending to the end of the side surface connecting the second surface; and
a second redistribution pattern formed over the first redistribution pattern and extending from the side surface to the first surface.
2. The semiconductor package according to claim 1 , wherein the angle between the side surface and the first surface is an obtuse angle and the angle between the second surface and the side surface is an acute angle.
3. The semiconductor package according to claim 1 , further comprising:
an insulation layer pattern interposed between the first surface and the first redistribution pattern and having an opening for exposing the bonding pad.
4. The semiconductor package according to claim 1 , wherein the first and second redistribution patterns are made from a same material.
5. The semiconductor package according to claim 4 , wherein the first redistribution pattern includes one of copper, gold, aluminum, and a metal alloy thereof.
6. The semiconductor package according to claim 1 , wherein the first redistribution pattern is formed to a first thickness and the second redistribution pattern is formed to a second thickness thicker than the first thickness.
7. The semiconductor package according to claim 1 , further comprising:
a molding member for covering the semiconductor chip and selectively exposing the second redistribution pattern.
8. The semiconductor package according to claim 1 , further comprising:
an anti-corrosion member disposed over the second redistribution pattern for preventing corrosion of the second redistribution pattern.
9. The semiconductor package according to claim 8 , wherein the anti-corrosion member is a molding member for covering the exposed side and bottom surfaces of the second redistribution pattern and leaving exposed an upper surface of the second redistribution pattern.
10. The semiconductor package according to claim 9 , wherein the anti-corrosion member further includes a plated layer disposed over an upper surface of the second redistribution pattern which is left exposed by the molding member.
11. The semiconductor package according to claim 1 , further comprising:
a substrate having a connection pad connected electrically with the second redistribution pattern.
12. The semiconductor package according to claim 11 , wherein a solder is interposed between the connection pad and the second redistribution pattern.