Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the same

1. A phase change memory device comprising:

a semiconductor substrate having a plurality of phase change cell regions;

a plurality of lower electrodes formed on the semiconductor substrate in the phase change cell regions;

an insulation layer formed over the semiconductor substrate and covering the lower electrodes, the insulation layer having a plurality of contact holes exposing the lower electrodes;

a first heater and a second heater formed in the plurality of contact holes;

a conductive pattern formed at least on a left side region of the first heater, on a middle region between the first and second heaters, and on a right side region of the second heater so as to expose the first and second heaters, portions of the insulation layer between the first heater and the conductive pattern and portions of the insulation layer between the second heater and the conductive pattern;

a phase change layer pattern formed on the first and second heaters, the conductive pattern, and the portions of the insulation layer between the first heater and the conductive pattern and between the second heater and the conductive pattern; and

an upper electrode formed on the phase change layer pattern.

2. The phase change memory device according to claim 1 , wherein at least one of the first heater and the second heater is formed to completely fill the contact hole.

3. The phase change memory device according to claim 1 , wherein at least one of the first heater and the second heater does not completely fill the contact hole.

4. The phase change memory device according to claim 1 , wherein the phase change layer pattern and the upper electrode are formed in the shape of a pattern in each phase change cell region.

5. The phase change memory device according to claim 1 , wherein the phase change layer pattern and the upper electrode are formed in a manner such that the phase change layer pattern and the upper electrode extend between and connect phase change cell regions.

6. The phase change memory device according to claim 1 , wherein the conductive pattern is made of a same material as the first heater and the second heater.

7. A phase change memory device comprising:

a semiconductor substrate having a plurality of phase change cell regions;

a plurality of lower electrodes formed on the semiconductor substrate in the phase change cell regions;

an insulation layer formed over the semiconductor substrate and covering the lower electrodes, the insulation layer having a plurality of contact holes exposing the lower electrodes;

a plurality of heaters formed in the plurality of contact holes;

a conductive pattern formed on portions of the insulation layer on both sides of each heater of the plurality of heaters such that the conductive pattern is formed between adjacent heaters of the plurality of heaters and such that the plurality of heaters and portions of the insulation layer between each heater of the plurality of heaters and the conductive pattern are exposed;

a phase change layer pattern formed on each heater of the plurality of heaters, the conductive pattern on both sides of each heater of the plurality of heaters, and the portions of the insulation layer between each heater of the plurality of heaters and the conductive pattern; and

an upper electrode formed on the phase change layer pattern such that for a heater of the plurality of heaters, the phase change layer is interposed between the upper electrode and the conductive pattern on both sides of the heater and is interposed between the upper electrode and the heater between the conductive patterns on both sides of the heater.