Semiconductor device
View Patent ↗There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers formed in an N-type epitaxial layer, N-type cathode diffusion layers formed in the epitaxial layer, a P-type third anode diffusion layer formed in the epitaxial layer so as to surround the first and second anode diffusion layers and to extend toward the cathode diffusion layers, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.
1. A semiconductor device comprising:
a semiconductor layer of a first general conductivity type;
a first anode diffusion layer of a second general conductivity type formed in the semiconductor layer;
a second anode diffusion layer of the second general conductivity type formed in the semiconductor layer and separated from the first diffusion layer, the second anode diffusion layer surrounding the first anode diffusion layer in plan view of the semiconductor device;
a third anode diffusion layer of the second general conductivity type formed in the semiconductor layer so that the first and second anode diffusion layers are confined within a lateral area of the third anode diffusion layer and are physically in contact with the third anode diffusion layer;
a cathode diffusion layer of the first general conductivity type formed in the semiconductor layer and not being disposed in the lateral area of the third anode diffusion layer; and
a Schottky barrier metal layer disposed on the first, second and third anode diffusion layers and confined within the lateral area of the third anode diffusion layer in plan view of the semiconductor device.
2. The semiconductor device of claim 1 , wherein the cathode diffusion layer comprises two diffusion layers of the first general conductivity type having different impurity concentrations and is connected to a cathode electrode.
3. The semiconductor device of claim 1 , wherein an impurity concentration of the third anode diffusion layer is lower than impurity concentrations of the first and second anode diffusion layers.
4. The semiconductor device of claim 2 , wherein an impurity concentration of the third anode diffusion layer is lower than impurity concentrations of the first and second anode diffusion layers.
5. The semiconductor device of claim 1 , further comprising an electric field shielding film formed on the semiconductor layer and a wiring layer to which an anode potential is applied, wherein the electric field shielding film is configured to receive the same electric potential as applied to the cathode diffusion layer and placed where the wiring layer intersects the cathode diffusion layer.
6. The semiconductor device of claim 2 , further comprising an electric field shielding film formed on the semiconductor layer and a wiring layer to which an anode potential is applied, wherein the electric field shielding film is configured to receive the same electric potential as applied to the cathode diffusion layer and placed where the wiring layer intersects the cathode diffusion layer.
7. The semiconductor device of claim 3 , further comprising an electric field shielding film formed on the semiconductor layer and a wiring layer to which an anode potential is applied, wherein the electric field shielding film is configured to receive the same electric potential as applied to the cathode diffusion layer and placed where the wiring layer intersects the cathode diffusion layer.
8. The semiconductor device of claim 4 , further comprising an electric field shielding film formed on the semiconductor layer and a wiring layer to which an anode potential is applied, wherein the electric field shielding film is configured to receive the same electric potential as applied to the cathode diffusion layer and placed where the wiring layer intersects the cathode diffusion layer.
9. The semiconductor device of claim 1 , wherein the cathode diffusion layer surrounds the first, second and third anode diffusion layers.
10. The semiconductor device of claim 1 , wherein in the plan view of the semiconductor device the third anode diffusion layer extends beyond an outer edge of the second anode diffusion layer surrounding the first anode diffusion layer.
11. The semiconductor device of claim 1 , further comprising an embedded diffusion layer of the second general conductivity type formed in a surface portion of the second anode diffusion layer and having an impurity concentration higher than an impurity concentration of the second anode diffusion layer.
12. The semiconductor device of claim 11 , further comprising another embedded diffusion layer of the second general conductivity type formed in a surface portion of the first anode diffusion layer and having an impurity concentration higher than an impurity concentration of the first anode diffusion layer.