STRUCTURE AND METHOD FOR FORMING A DIELECTRIC CHAMBER AND ELECTRONIC DEVICE INCLUDING DIELECTRIC CHAMBER
A method (and structure) that selectively forms a dielectric chamber on an electronic device by forming a dummy structure over a semiconductor substrate, depositing a dielectric layer over the dummy structure, forming an opening through the dielectric layer to the dummy structure, and removing the dummy structure to form the dielectric chamber.
1 . An electronic device comprising:
a semiconductor substrate;
a plurality of conducting lines on the semiconductor substrate;
a dielectric chamber between two of the plurality of conducting lines; and
a structure between another two of the plurality of conducting lines.
2 . The device of claim 1 , wherein the dielectric chamber is filled with a gas.
3 . The device of claim 2 , wherein the gas comprises air.
4 . The device of claim 2 , wherein the gas comprises an inert gas.
5 . The device of claim 1 , further comprising a dielectric layer over the dielectric chamber.
6 . The device of claim 5 , wherein the dielectric layer defines an opening over the dielectric chamber.
7 . The device of claim 1 , wherein the plurality of conducting lines comprise a plurality of metal lines.
8 . The device of claim 1 , wherein said dielectric chamber is formed in one of the active layer, the passive layer, and the first metal layer.
9 . An electronic device comprising:
a semiconductor substrate;
a first set of conducting lines over the semiconductor substrate;
a second set of conducting lines over the first set of conducting lines; and
a dielectric chamber between the first set of conducting lines and the second set of conducting lines.
10 . The device of claim 9 , further comprising another dielectric chamber between one of two conducting lines in the first set of conducting lines and two conducting lines in the second set of conducting lines.
11 . The device of claim 9 , further comprising another dielectric chamber between said first set of conducting lines and said semiconductor substrate.
12 . The device of claim 9 , wherein the second set of conductive lines cross the first set of conductive lines.
13 . A semiconductor structure, comprising:
a semiconductor substrate;
a plurality of conducting lines on the semiconductor substrate;
a dielectric chamber between two of the plurality of conducting lines; and
a structure between another two of the plurality of conducting lines.
14 . The device of claim 13 , wherein the dielectric chamber is filled with a gas.
15 . The device of claim 14 , wherein the gas comprises air.
16 . The device of claim 14 , wherein the gas comprises an inert gas.
17 . The device of claim 13 , further comprising a dielectric layer over the dielectric chamber.
18 . The device of claim 16 , wherein the dielectric layer defines an opening over the dielectric chamber.
19 . The device of claim 13 , wherein the plurality of conducting lines comprise a plurality of metal lines.
20 . The device of claim 1 , wherein said structure comprises a polysilicon wiring.