Structure of bond pad for semiconductor die and method therefor
View Patent ↗A bond pad and a method of making the same for a semiconductor die has a bonding region formed on the bond pad. A test region is formed on the bond pad and is adjacent to the bonding region.
1. A bond pad area for a semiconductor die comprising:
a plurality of bonding pads, wherein each bonding pad comprises:
a bonding region formed on the bond pad;
a test region formed on the bond pad, the test region formed adjacent to the bonding region, the test region allowing for a probe mark to be formed thereon; and
an indented region formed on a side of the bond pad opposite of the test region to prevent the test region of the bond pad from interfering with a test region from a neighboring bond pad;
wherein each test region of each bond pad on a first side of the semiconductor die are aligned in a first row and wherein each bonding region of each bond pad on the first side of the semiconductor die are aligned in a second row, wherein the first row and the second row are approximately parallel.
2. A bond pad for a semiconductor die in accordance with claim 1 , wherein the bonding region and the test region are formed of a similar conductive material.
3. A bond pad for a semiconductor die in accordance with claim 1 , wherein the bonding region has an area larger than an area of the test region.
4. A bond pad for a semiconductor die in accordance with claim 1 , wherein both the bonding region and test region have a generally rectangular shape.
5. A bond pad for a semiconductor die in accordance with claim 4 , wherein a corner area of the test region is connected to a corner area of the bonding region.
6. A bond pad for a semiconductor die in accordance with claim 5 further comprising an insulative protection layer formed around a perimeter of the bond pad for enclosing the bond pad.
7. A bond pad for a semiconductor die in accordance with claim 1 , wherein the bonding region has a generally rectangular shape and the test region has a generally circular shape.
8. A bond pad for a semiconductor die in accordance with claim 7 , wherein the test region is connected to a corner of the bonding region.
9. A bond pad for a semiconductor die in accordance with claim 8 further comprising means for preventing interfering with the bond pad from a neighboring bond pad.
10. A bond pad for a semiconductor die in accordance claim 1 , wherein the bonding region and the test region have a generally circular shape.
11. A bond pad for a semiconductor die in accordance with claim 1 , wherein the bonding region has a generally circular shape and the test region has a generally rectangular shape.
12. A bond pad for a semiconductor die in accordance with claim 1 , wherein the bonding region has a generally hexagonal shape and the test region has a generally square shape.
13. A bond pad for a semiconductor die in accordance wherein the bonding region has a generally hexagonal shape and the test region has a generally circular shape.
14. A bond pad area for a semiconductor die comprising:
a plurality of bond pads, wherein each bond pad comprises:
a bonding region formed on the bond pad;
means for testing the semiconductor die formed adjacent to the bonding region and for allowing a probe mark to be formed thereon; and
an indented region formed on a side of the bond pad opposite of the test region to prevent the test region of the bond pad from interfering with a test region from a neighboring bond pad;
wherein the means for testing of each bond pad on a first side of the semiconductor die are aligned in a first row and wherein the bonding region of each bond pad on the first side of the semiconductor die are aligned in a second row.
15. A bond pad for a semiconductor die in accordance with claim 14 , wherein the bonding region and the means for testing are formed of a similar conductive material.
16. A bond pad for a semiconductor die in accordance with claim 14 , wherein the bonding region has an area larger than an area of the means for testing.
17. A semiconductor die comprising a plurality of bond pads, each bond pad comprising:
a bonding region for receiving a conductive interconnect;
a test region, adjacent to the bonding region, for receiving a test probe, the test region allowing for a probe mark to be formed thereon by the test probe; and
an indented region formed on a side of the bond pad opposite of the test region to prevent the test region of the bond pad from interfering with a test region from a neighboring bond pad;
wherein the test region of each bond pad on a first side of the semiconductor die are aligned in a row.
18. A semiconductor die in accordance with claim 17 , wherein the conductive interconnect is a wirebond.
19. A semiconductor die in accordance with claim 17 , wherein the conductive interconnect is a bump.
20. A semiconductor die in accordance with claim 17 , wherein the bonding region and the test region are formed of a similar conductive material.
21. A bond pad for a semiconductor die in accordance with claim 1 , wherein the bonding region, the test region and the indent region are formed on a first surface of a substrate.
22. A bond pad for a semiconductor die in accordance with claim 14 wherein the bonding region, means for testing, and the indented region are formed on a first surface of the substrate.
23. A semiconductor die in accordance with claim 17 wherein the semiconductor die further comprising a substrate, the bonding region, the test region, and the indented region formed on a first surface of the substrate.