Device applications for voltage switchable dielectric material having high aspect ratio particles
One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.
1. A device comprising:
two or more electrodes separated by a gap; and
a composition of voltage switchable dielectric (VSD) material provided in the gap, the composition of VSD material comprising:
a binder having a concentration by percentage of volume that ranges between 5-99%;
high aspect ratio (HAR) particles, including HAR particles that are (i) inorganic, (ii) conductive or semi-conductive, and (iii) dispersed as nanoscale particles within the binder, wherein the HAR particles have a concentration by percentage of volume that ranges between 0.01-95%; and
a concentration of particles other than HAR particles, the concentration of particles including (i) conductor particles that have a concentration by percentage of volume that ranges between 0-70%, and/or (ii) semiconductor particles that have a concentration by percentage of volume that ranges between 0.0-95%;
wherein the HAR particles and said conductor and/or semiconductor particles are uniformly dispersed within the binder, so as to not be agglomerated or lumped together in the binder;
wherein the HAR particles and said conductor and/or semiconductor particles are combined to provide said composition with a characteristic of being (i) dielectric in absence of a voltage across the gap that exceeds a characteristic voltage level, and (ii) conductive with application of said voltage across the gap exceeding said characteristic voltage level;
and wherein said characteristic voltage level exceeds about 14 volts per mil across the gap.
2. The device of claim 1 , wherein the device corresponds to a printed circuit board.
3. The device of claim 2 , wherein the VSD material is provided as a layer within the substrate device.
4. The device of claim 2 , wherein the VSD material is provided as trace elements on a surface of the substrate device.
5. The device of claim 1 , wherein the device is selected from a group consisting of a discrete device, a semi-conductor package, a display device or backplane, a light-emitting diode, and a radio-frequency identification device.
6. The device of claim 1 , wherein the conductor and/or semiconductor particles, other than the HAR particles, include a metal or a metal complex.
7. The device of claim 1 , wherein the HAR particles are metallic.
8. The device of claim 1 , wherein the HAR particles are conductive nanorods.
9. The device of claim 1 , wherein the HAR particles are conductive nanowires.
10. The device of claim 1 , wherein the HAR particles include antimony tin oxide (ATO).
11. The device of claim 1 , wherein the VSD composition includes semiconductive particles and conductor particles other than HAR particles, wherein said semiconductive particles correspond to one or more of silicon, silicon carbide, titanium dioxide, boron nitride, aluminum nitride, nickel oxide, zinc oxide, zinc sulfide, bismuth oxide, cerium oxide, iron oxide, metal or/and complexes.
12. The device of claim 1 , wherein the VSD composition includes semiconductive particles and conductor particles other than HAR particles, wherein said semiconductive particles include particles corresponding to a class of oxides, metal nitrides, metal carbides, metal borides, metal sulfides, or a combination thereof.
13. The device of claim 1 , wherein the VSD composition includes semiconductive particles other than the HAR particles that include Titanium dioxide (TiO 2 ).
14. The device of claim 1 , wherein the composition of VSD material is formed without sintering.