Cu—Ni—Si—Co—Cr copper alloy for electronic materials and method for manufacturing same

1. A Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09-about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, including carbon, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is about 1/1000 μm 2 to about 7/1000 μm 2 , and Pc/P is about 0.09 to about 0.25 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.

2. The Cu—Ni—Si—Co—Cr copper alloy for electronic materials of claim 1 , further comprising in total equal to or less than about 2.0% by weight of one or more elements selected from the group consisting of P, As, Sb, Be, B, Mn, Mg, Sn, Ti, Zr, Al, Fe, Zn and Ag.

3. A method for manufacturing Cu—Ni—Si—Co—Cr copper alloys for electronic materials of claim 1 or 2 , comprising the step of: heating an ingot at a temperature from about 900° C. or more to less than about 1000° C. before hot rolling at a temperature of about 650° C. or more; and cold rolling before conducting solution treatment at about 850-about 1000° C. and conducting age hardening at about 350-about 550° C., whereby said Cu—Ni—Si—Co—Cr copper alloy is produced.

4. An electronic component comprising the Cu—Ni—Si—Co—Cr copper alloy of claim 1 or 2 .