IP Library Granted Patent US 7,679,055
Granted Patent B2
US 7,679,055 · App. 11/892,675 · Granted Mar 16, 2010

Pattern displacement measuring method and pattern measuring device

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Quick Facts
Patent No.
US 7,679,055
App. No.
11/892,675
Granted
Mar 16, 2010
Kind
B2
Abstract

An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.

Claims (10)

1. A pattern displacement measuring method of measuring a distance between a line segment of design data and an edge of a charged particle radiation image, wherein:

a first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image in accordance with a pattern matching between the line segment of the design data of the upper layer pattern and the charged particle radiation image;

a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image in accordance with a pattern matching between the line segment of the design data of the lower layer pattern and the charged particle radiation image; and

a superimposition displacement is detected between said upper layer pattern and said lower layer pattern in accordance with said first distance and said second distance.

2. A pattern measuring apparatus having a control unit for measuring a size of a pattern formed on a sample, by scanning an electron beam emitted from an electron source and using an electron emitted from said sample, wherein:

said control unit measures a first distance of an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image in accordance with a pattern matching between the line segment of the design data of the upper layer pattern and the charged particle radiation image;

measures a second distance of a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image in accordance with a pattern matching between the line segment of the design data of the lower layer pattern and the charged particle radiation image; and

detects a superimposition displacement between said upper layer pattern and said lower layer pattern in accordance with said first distance and said second distance.

3. The pattern measuring apparatus according to claim 2 , wherein said control unit divides the edge of the charged particle radiation image into said upper layer pattern and said lower layer pattern, and measures a distance from the design data of said upper layer pattern and said lower layer pattern.

4. The pattern measuring apparatus according to claim 2 , wherein said control unit forms a template removing a line segment of said lower layer pattern in an area where said upper layer pattern said lower layer pattern of said design data are superimposed.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 22, 2008
From: SUTANI, TAKUMICHI; MATSUOKA, RYOICHI; MOROKUMA, HIDETOSHI; SUGIYAMA, AKIYUKI; SHINDO, HIROYUKI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 021048/0579 →