IP Library Granted Patent US 7,715,250
Granted Patent B2
US 7,715,250 · App. 11/893,647 · Granted May 11, 2010

Circuitry and method for indicating a memory

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Quick Facts
Patent No.
US 7,715,250
App. No.
11/893,647
Granted
May 11, 2010
Kind
B2
Abstract

Circuitry and a method for indicating a multiple-type memory is disclosed. The multiple-type memory includes memory blocks in communication with control logic blocks. The memory blocks and the control logic blocks are configured to emulate a plurality of memory types. The memory blocks can be configured into a plurality of vertically stacked memory planes. The vertically stacked memory planes may be used to increase data storage density and/or the number of memory types that can be emulated by the multiple-type memory. Each memory plane can emulate one or more memory types. The control logic blocks can be formed in a substrate (e.g., a silicon substrate including CMOS circuitry) and the memory blocks or the plurality of memory planes can be positioned over the substrate and in communication with the control logic blocks. The multiple-type memory may be non-volatile so that stored data is retained in the absence of power.

Claims (12)

1. An apparatus, comprising:

a plurality of multiple-type memories, wherein the plurality of multiple-type memories are vertically configured memories;

a first circuitry configured to invert a bit of a memory address;

a second circuitry configured to select the bit of the memory address or the inverted bit from the first circuitry configured to invert the bit based on a polarity select parameter;

a first logic circuit in electrical communication with the second circuitry and configured to select the bit, the first logic circuit being configured to output a memory select value operative to select one of the plurality of multiple-type memories for a data operation; and

a logic plane positioned in a substrate, the logic plane including the first circuitry, the second circuitry, and the first logic circuit, and the vertically configured memories are in contact with the substrate and are positioned directly over the substrate and in electrical communication with the logic plane.

2. The apparatus as set forth in claim 1 , wherein the first logic circuit comprises an OR gate.

3. The apparatus as set forth in claim 1 and further comprising:

a second logic circuit in communication with the first logic circuit, the second logic circuit being configured to receive a plurality of memory select values from a plurality of compare logics.

4. The apparatus as set forth in claim 3 , wherein the second logic circuit comprises an AND gate.

5. The apparatus as set forth in claim 1 , wherein the second circuitry comprises a multiplexer.

6. The apparatus as set forth in claim 1 , wherein the first circuitry comprises an inverter.

Assignments (3)
RELEASE Recorded Apr 9, 2012
From: SILICON VALLEY BANK; GOLD HILL CAPITAL
To: UNITY SEMICONDUCTOR, INC.
Reel/Frame 028132/0675 →
SECURITY AGREEMENT Recorded Apr 13, 2009
From: UNITY SEMICONDUCTOR CORPORATION
To: GOLD HILL CAPITAL
Reel/Frame 023129/0669 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2007
From: NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 019911/0040 →