Wafer bonding material with embedded conductive particles
View Patent ↗A material for bonding a first wafer to a second wafer, which includes an insulating adhesive with conductive particles embedded in the adhesive substance. When the adhesive is applied and melted or fused, and pressure is applied between the first wafer and the second wafer, the first wafer approaches the second wafer until a minimum separation is reached, defined by a dimension of the conductive particles. Each of the first wafer and the second wafer may have circuitry formed thereon, and the conductive particles may form a conductive path between the circuitry on one wafer and the circuitry on the other wafer. Advantageously, the high fusing temperature required by the insulating adhesive may also serve to activate a getter material, formed in the device cavity between the first wafer and the second wafer.
1. A bonding material which bonds a first wafer to a second wafer, and provides a conductive path between the first wafer and the second wafer, comprising:
an insulating adhesive which adheres the first wafer to the second wafer; and
at least one conductive particle in the insulating adhesive,
and at least one additional rigid particle in the insulating adhesive, wherein the additional rigid particle has a characteristic dimension smaller than a dimension of the at least one conductive particle, and wherein the characteristic dimension of the at least one additional rigid particle defines the minimum separation between the first wafer and the second wafer.
2. The bonding material of claim 1 , wherein the at least one conductive particle comprises at least one of aluminum, gold, platinum, tungsten, copper and nickel, and are distributed uniformly throughout the insulating adhesive.
3. The bonding material of claim 1 , wherein the at least one additional rigid particle is non-conductive.
4. The bonding material of claim 1 , wherein the insulating adhesive further comprises at least one of glass frit and a polymer.
5. The bonding material of claim 1 , wherein the bonding material is disposed in a layer around a perimeter of a MEMS device fabricated on at least one of the first and the second wafer.
6. The bonding material of claim 1 , wherein a volume ratio of the at least one conductive particle to the insulating adhesive in the bonding material is between about 0.1% and about 50%.
7. The bonding material of claim 1 , wherein a material of the at least one additional rigid particle comprises at least one of sapphire, alumina, silica, metal and diamond.
8. The bonding material of claim 7 , wherein a material of the at least one conductive particle is more malleable than a material of the at least one additional rigid particle.
9. The bonding material of claim 1 , wherein the at least one conductive particle is spherical, having a diameter of between about 1 μm and about 100 μm.
10. A device, comprising:
the bonding material of claim 1 ;
the microstructure formed on at least one of the first wafer and the second wafer, and enclosed between the first wafer and the second wafer; and
a getter material formed on at least one of the first wafer and the second wafer, which removes gases from an environment around the microstructure.
11. The microdevice of claim 10 , wherein the getter material comprises at least one of zirconium, titanium, vanadium, niobium, tantalum and iron, and is between about 0.5 μm and about 3 μm thick.
12. A method for bonding a first wafer to a second wafer, comprising:
providing an insulating adhesive;
providing a plurality of conductive particles;
providing at least one additional rigid particle in the insulating adhesive, wherein the additional rigid particle has a characteristic dimension smaller than a dimension of the at least one conductive particle;
mixing the conductive particles into the insulating adhesive to form a bonding material;
applying the bonding material to at least one of a first wafer and a second wafer;
squeezing the first wafer and the second wafer until a minimum separation is reached defined by a dimension of the at least one additional rigid particle; and
hardening the insulating adhesive in the bonding material, wherein within the hardened adhesive, the at least one conductive particle forms a conductive path between the first wafer and the second wafer.
13. The method of claim 12 , wherein a material of the at least one additional rigid particle comprises at least one of sapphire, alumina, silica, metal and diamond.
14. The method of claim 12 , further comprising:
forming a getter material on at least one of the first wafer and the second wafer.
15. The method of claim 14 , further comprising:
heating the insulating adhesive to fuse the insulating adhesive and activate the getter material; and
cooling the insulating adhesive to harden the insulating adhesive.
16. The method of claim 15 , wherein heating the insulating adhesive to fuse the insulating adhesive and activate the getter material comprises:
heating the insulating adhesive to at least about 400 degrees centigrade for at least about 10 minutes.
17. The method of claim 12 , further comprising:
mixing a solvent into the bonding material, in an amount sufficient to maintain a viscosity of the bonding material at a level within about 50% of a viscosity of the insulating adhesive.
18. The method of claim 12 , further comprising:
providing an environment around the first wafer and the second wafer including at least one of air, SF 6 , He, N 2 , H 2 , Ne, vacuum or partial vacuum around the first wafer and the second wafer.
19. The method of claim 18 , wherein the environment is provided at a pressure of less than about 10 Torr.
20. The method of claim 12 , wherein applying the bonding material to at least one of the first wafer and the second wafer comprises forcing the bonding material through at least one of a silk screen and a stencil.