Method for performing pattern pitch-split decomposition utilizing anchoring features

1. A computer-implemented method for decomposing a target pattern containing features to be printed on a wafer, into multiple patterns, the computer-implemented method comprising the steps of:

(a) determining a minimum critical dimension and pitch associated with a process to be utilized to image said multiple patterns;

(b) generating an anchoring feature;

(c) disposing said anchoring feature adjacent a first feature of said target pattern;

(d) growing said anchoring feature a predetermined amount so as to define a first area;

(e) assigning any feature within said first area to a first pattern;

(f) disposing said anchoring feature adjacent a second feature of said target pattern;

(g) growing said anchoring feature said predetermined amount so as to define a second area; and

(h) assigning any feature within said second area to a second pattern,

wherein steps (a)-(h) are implemented using the computer.

2. A method for decomposing a target pattern according to claim 1 , wherein steps (c)-(h) are repeatedly performed so as to process all densely spaced features contained in said target pattern.

3. A method for decomposing a target pattern according to claim 1 , wherein a width of said anchoring feature is equal to or less than half of said minimum critical dimension.

4. A method for decomposing a target pattern according to claim 3 , wherein said predetermined amount is equal to said pitch.

5. A method for decomposing a target pattern according to claim 1 , wherein all non-densely spaced features contained in said target pattern are disposed in either of said first pattern or said second pattern.

6. A method for decomposing a target pattern according to claim 1 , further comprising the step of applying optical proximity correction to said first pattern and said second pattern.

7. A computer readable storage medium storing a computer program for decomposing a target pattern containing features to be printed on a wafer, into multiple patterns, when executed, causing a computer to perform the steps of:

(a) determining a minimum critical dimension and pitch associated with a process to be utilized to image said multiple patterns;

(b) gen crating an anchoring feature;

(c) disposing said anchoring feature adjacent a first feature of said target pattern;

(d) growing said anchoring feature a predetermined amount so as to define a first area;

(e) assigning any feature within said first area to a first pattern;

(f) disposing said anchoring feature adjacent a second feature of said target pattern;

(g) growing said anchoring feature said predetermined amount so as to define a second area; and

(h) assigning any feature within said second area to a second pattern.

8. A computer readable storage medium according to claim 7 , wherein steps (c)-(h) are repeatedly performed so as to process all densely spaced features contained in said target pattern.

9. A computer readable storage medium according to claim 7 , wherein a width of said anchoring feature is equal to or less than half of said minimum critical dimension.

10. A computer readable storage medium according to claim 9 , wherein said predetermined amount is equal to said pitch.

11. A computer readable storage medium according to claim 7 , wherein all non-densely spaced features contained in said target pattern are disposed in either of said first pattern or said second pattern.

12. A computer readable storage medium according to claim 7 , further comprising the step of applying optical proximity correction to said first pattem and said second pattern.

13. A device manufacturing method comprising the steps of:

(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

(b) providing a projection beam of radiation using an imaging system;

(c) using patterns on masks to endow the projection beam with patterns in its cross-section;

(d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material, wherein in step (c), providing a pattern on a mask includes the steps of:

(a1) determining a minimum critical dimension and pitch associated with a process to be utilized to image said multiple patterns;

(b1) generating an anchoring feature;

(c1) disposing said anchoring feature adjacent a first feature of said target pattern;

(d1) growing said anchoring feature a predetermined amount so as to define a first area;

(e1) assigning any feature within said first area to a first pattern;

(f1) disposing said anchoring feature adjacent a second feature of said target pattern;

(g1) growing said anchoring feature said predetermined amount so as to define a second area; and

(h1) assigning any feature within said second area to a second pattern.

14. A device manufacturing method according to claim 13 , wherein steps (c)-(h) are repeatedly performed so as to process all densely spaced features contained in said target pattern.

15. A device manufacturing method according to claim 13 , wherein a width of said anchoring feature is equal to or less than half of said minimum critical dimension.

16. A device manufacturing method according to claim 15 , wherein said predetermined amount is equal to said pitch.

17. A method for generating masks to he utilized in a photolithography process, said method comprising the steps of:

(a) determining a minimum critical dimension and pitch associated with said process to be utilized to image said masks;

(b) generating an anchoring feature;

(c) disposing said anchoring feature adjacent a first feature of a target pattern;

(d) growing said anchoring feature a predetermined amount so as to define a first area;

(e) assigning any feature within said first area to a first pattern;

(f) disposing said anchoring feature adjacent a second feature of said target pattern;

(g) growing said anchoring feature said predetermined amount so as to define a second area;

(h) assigning any feature within said second area to a second pattern; and

(i) generating a first mask corresponding to said first pattern, and a second mask corresponding to said second pattern wherein step (a)-(i) are implemented using the computer.

18. A method for generating masks according to claim 17 , wherein steps (c)-(h) are repeatedly performed so as to process all densely spaced features contained in said target pattern.

19. A method for generating masks according to claim 17 , wherein a width of said anchoring feature is equal to or less than half of said minimum critical dimension.

20. A method for generating masks according to claim 19 , wherein said predetermined amount is equal to said pitch.