Ta-lined tungsten plugs for transistor-local hydrogen gathering
The present electronic device includes a dielectric body having an opening therein. A tantalum layer is provided in the opening of the dielectric body, the layer having the characteristic of absorbing hydrogen with decrease in temperature, and releasing hydrogen with increase in temperature. A conductive tungsten plug is provided on the layer in the opening.
1 . An electronic device comprising:
a dielectric body having an opening therein;
a layer in the opening of the dielectric body, the layer having the characteristic of absorbing hydrogen with decrease in temperature of the layer; and
a conductive plug in the opening.
2 . The device of claim 1 wherein the layer has the characteristic of releasing hydrogen therefrom with increase in temperature of the layer
3 . The device of claim 1 wherein the conductive plug is in contact with the layer.
4 . The device of claim 1 wherein the layer is a conductive layer.
5 . The device of claim 4 wherein the layer comprises tantalum.
6 . The device of claim 5 wherein the conductive plug comprises tungsten.
7 . The device of claim 1 wherein the dielectric body comprises silicon dioxide.
8 . The device of claim 1 and further comprising a memory device adjacent to the layer.
9 . The device of claim 8 wherein the memory device is a flash memory device.
10 . A method of fabricating an electronic device comprising:
providing a dielectric body;
providing an opening in the dielectric body;
providing a layer in the opening of the dielectric body, the layer having the characteristic of absorbing hydrogen with decrease in temperature of the layer; and
providing a conductive plug in the opening.
11 . The method of claim 10 wherein the layer has the characteristic of releasing hydrogen therefrom with increase in temperature of the layer.
12 . The method of claim 10 wherein the conductive plug is in contact with the layer.
13 . The method of claim 10 wherein the layer is a conductive layer.
14 . The method of claim 13 wherein the layer comprises tantalum.
15 . The method of claim 14 wherein the conductive plug comprises tungsten.
16 . The method of claim 10 and further comprising undertaking a processing step at an elevated temperature subsequent to providing the conductive plug in the opening.
17 . The method of claim 10 wherein the dielectric body comprises silicon dioxide.
18 . The device of claim 1 and further comprising said device incorporated in a system.
19 . The device of claim 18 wherein the system is selected from the group consisting of a hand-held device, a vehicle, and a computer.