Manufacturing method of semiconductor device and substrate processing apparatus
View Patent ↗To provide a manufacturing method of a semiconductor device, comprising: loading a substrate, with a silicon surface exposed at a part of the substrate, into a processing chamber; heating an inside of said processing chamber; performing pre-processing of supplying at least silane-based gas, halogen-based gas, and hydrogen gas into said processing chamber, removing at least a natural oxide film or a contaminated matter that exist on a surface of said silicon surface, and growing an epitaxial film on said silicon surface; and supplying gas containing at least silicon into said processing chamber after said pre-processing, and further growing the epitaxial film on said epitaxial film.
1. A manufacturing method of a semiconductor device, comprising:
loading a substrate, with a silicon surface exposed at a part of the substrate, into a processing chamber;
heating an inside of said processing chamber;
performing pre-processing of supplying a mixed gas of at least silane-based gas, halogen-based gas, and hydrogen gas into said processing chamber, removing at least a natural oxide film or a contaminated matter that exist on a surface of said silicon surface, and growing an epitaxial film on said silicon surface; and
supplying gas containing at least silicon into said processing chamber after said pre-processing, and further growing the epitaxial film on said epitaxial film.
2. The manufacturing method of the semiconductor device according to claim 1 , wherein said step of pre-processing further comprises the step of increasing a temperature inside of said processing chamber, and said gas for pre-processing supplied in said step of pre-processing is supplied into said processing chamber in said step of increasing temperature, and is supplied even in a state that a temperature in said processing chamber is 620° C. or more.
3. The manufacturing method of the semiconductor device according to claim 2 , wherein said step of pre-processing further comprises the step of maintaining a temperature in said processing chamber to 620° C. or more and to a desired temperature higher than the temperature in the step of growing said epitaxial film,
said gas for pre-processing is supplied into said processing chamber in said step of increasing temperature and said step of maintaining temperature, and
after said step of pre-processing ends, the temperature is decreased to the temperature in the step of growing said epitaxial film, while hydrogen gas is supplied into said processing chamber in place of said gas for pre-processing.
4. A manufacturing method of a semiconductor device, comprising:
loading a substrate, with a silicon surface exposed at a part of the substrate, into a processing chamber;
heating an inside of said processing chamber;
performing pre-processing of supplying a mixed gas of at least silane-based gas, halogen-based gas, and hydrogen gas into said processing chamber, and removing at least a natural oxide film or a contaminated matter that exist on a surface of said silicon surface; and
supplying gas containing at least silicon into said processing chamber and growing an epitaxial film on said silicon surface that has undergone said pre-processing,
said pre-processing step further comprising the step of increasing a temperature in said processing chamber, in which said gas for pre-processing supplied in said step of pre-processing is supplied into said processing chamber in said step of increasing temperature until the temperature in said processing chamber reaches 620° C.
5. The manufacturing method of the semiconductor device according to claim 4 , wherein said step of increasing temperature further comprises the step of increasing the temperature up to the temperature of 620° C. or more which is the temperature in the step of growing said epitaxial film, and in the step of increasing the temperature to 620° C. or more, the hydrogen gas is supplied into said processing chamber in place of said gas for pre-processing.
6. The manufacturing method of the semiconductor device according to claim 1 , wherein said substrate loaded into said processing chamber is subjected to cleaning by using dilute hydrofluoric acid, and a hydrogen termination is formed on a surface of said substrate.
7. The manufacturing method of the semiconductor device according to claim 1 , wherein
said substrate is loaded into said processing chamber, with the temperature in said processing chamber set at not less than 200° C. and not more than 450 to 500° C., and
said gas for pre-processing is supplied into said processing chamber before the temperature in said processing chamber becomes 450 to 500° C.
8. A substrate processing apparatus, comprising:
a processing chamber that processes a substrate, with a silicon surface exposed at a part of the substrate;
a heating member that heats an inside of said processing chamber;
a supply port that supplies at least a mixed gas of silane-based gas, halogen-based gas, hydrogen gas, and gas containing silicon, into said processing chamber;
an exhaust port that exhausts the inside of said processing chamber; and
a controller that controls the step of performing pre-processing of supplying at least the silane-based gas, the halogen-based gas, and the hydrogen gas into said processing chamber, removing at least a natural oxide film or a contaminated matter that exists on the surface of said silicon surface, and growing an epitaxial film on said silicon surface, and the step of supplying gas containing at least silicon into said processing chamber after said step of performing pre-processing and further growing the epitaxial film on said epitaxial film.
9. A substrate processing apparatus, comprising:
a processing chamber that processes the substrate, with a silicon surface exposed at a part of the substrate;
a heating member that heats an inside of said processing chamber;
a supply port that supplies at least a mixed gas of silane-based gas, halogen-based gas, hydrogen gas, and gas containing silicon into said processing chamber;
an exhaust port that exhausts the inside of said processing chamber; and
a controller that controls steps such as the step of performing pre-processing of supplying at least the silane-based gas, the halogen-based gas, and the hydrogen gas into said processing chamber and removing at least a natural oxide film or a contaminated matter that exists on the surface of said silicon surface, the step of supplying gas containing at least silicon into said processing chamber and growing an epitaxial film on said silicon surface that has undergone said pre-processing, and the step of increasing a temperature inside of said processing chamber in said step of performing pre-processing, and the step of supplying said gas for pre-processing supplied in said step of pre-processing into said processing chamber in said step of increasing temperature in which said gas is supplied until the temperature in said processing chamber reaches 620° C.
10. The manufacturing method of the semiconductor device according to claim 4 , wherein said substrate loaded into said processing chamber is subjected to cleaning by using dilute hydrofluoric acid, and a hydrogen termination is formed on a surface of said substrate.
11. The manufacturing method of the semiconductor device according to claim 4 , wherein
said substrate is loaded into said processing chamber, with the temperature in said processing chamber set at not less than 200° C. and not more than 450 to 500° C., and
said gas for pre-processing is supplied into said processing chamber before the temperature in said processing chamber becomes 450 to 500° C.