Metal material, and coating film and wiring for semiconductor integrated circuitry utilizing the metal material
When metallic material is employed for various metallic films, it is possible to improve at least one of the mechanical strength, the durability against abrasion, and the uniformess as a film while keeping unchanged the chemical property and the electric property of the metallic material. Due to the gel three-dimensional mesh structure 406 , the dislocations 407 of the tangle in the mesh form are introduced in the crystal of the metal 401 at high density; therefore, when the tensile stress 403 is applied thereto, these dislocations slightly shift. As a result, the metal 401 deforms by uniformly dispersing distortion in the order of crystal grains, and hence there does not occur concentration of stress, which leads to the breakage or the severance at the grain interface 402 . Therefore, the metallic material of the present invention improves the mechanical strength and the durability against abrasion.
1. A metallic material characterized by comprising, in a transmission electron microscope image, crystal grains observed to be filled up with moiré patterns that are amorphously subdivided and that have variable intervals and angles.
2. The metallic material in accordance with claim 1 , characterized by comprising
crystal grains providing moiré patterns whose intervals are equal to or less than ten nanometers.
3. The metallic material in accordance with claim 1 , characterized by comprising
crystal grains including subdivided areas of moiré patterns, the subdivided areas having a mean size equal to or less than 50 nm.
4. The metallic material in accordance with claim 1 , characterized by comprising
a structure in which metal is densely filled in gaps in a network structure of gel.
5. The metallic material in accordance with claim 1 , characterized by comprising
copper as a base thereof.
6. Wiring for semiconductor integrated circuits, comprising metallic material that includes, in a transmission electron microscope image, crystal grains observed to be filled up with moiré patterns that are amorphously subdivided and that have variable intervals and angles.
7. The wiring for semiconductor integrated circuits according to claim 6 , wherein the metallic material includes crystal grains providing moiré patterns whose intervals are equal to or less than ten nanometers.
8. The wiring for semiconductor integrated circuits according to claim 6 , wherein the metallic material includes crystal grains including subdivided areas of moiré patterns, the subdivided areas having a mean size equal to or less than 50 nm.
9. The wiring for semiconductor integrated circuits according to claim 6 , wherein the metallic material includes a structure in which metal is densely filled in gaps in a network structure of gel.
10. The wiring for semiconductor integrated circuits according to claim 6 , wherein the metallic material includes copper as a base thereof.
11. A coating film for electric tools, mechanical parts, or optical parts, comprising the metallic material that includes, in a transmission electron microscope image, crystal grains observed to be filled up with moiré patterns that are amorphously subdivided and that have variable intervals and angles.
12. The coating film according to claim 11 , wherein the metallic material includes crystal grains providing moiré patterns whose intervals are equal to or less than ten nanometers.
13. The coating film according to claim 11 , wherein the metallic material includes crystal grains including subdivided areas of moiré patterns, the subdivided areas having a mean size equal to or less than 50 nm.
14. The coating film according to claim 11 , wherein the metallic material includes a structure in which metal is densely filled in gaps in a network structure of gel.
15. The coating film according to claim 11 , wherein the metallic material includes copper as a base thereof.