Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system

1. A projection exposure system, comprising:

a light source configured to produce light in the EUV region;

a first optical system configured to illuminate a mask by the light of the light source; and a second optical system configured to image the mask on a structural member; wherein at least one polarization-optical element for the EUV region is disposed in a beam path between the light source and the structural member,

the at least one polarization-optical element comprises a substrate being at least partially transparent for a first polarization state of the EUV light being incident under a given angle of inclination α,

the at least one polarization-optical element comprises a layer structure which is arranged on the substrate and which is reflective for a second polarization state of the EUV light, and the projection exposure system is microlithography projection exposure system, wherein the layer structure comprises alternately successive molybdenum layers and silicon layers.

2. The projection exposure system according to claim 1 , wherein the substrate and the layer structure of the polarization-optical element are arranged such that they have their transparent and reflective optical effect at an angle of inclination α of the EUV light of approximately 45°.

3. The projection exposure system according to claim 1 , wherein the substrate has a thickness of less than 1 μm.

4. The projection exposure system according to claim 3 , wherein the substrate of the polarization-optical element is disposed on a regionally perforated carrier structure of higher mechanical stability than the substrate.

5. The projection exposure system according to claim 1 , wherein the layer structure has a plurality of alternatively successive layers.

6. The projection exposure system according to claim 5 , wherein the polarization-optical element comprises less than 80 alternately successive layers.

7. The projection exposure system according to claim 6 , wherein the polarization-optical element comprises approximately 40 alternately successive layers.

8. The projection exposure system according to claim 1 , wherein the layer thickness of the molybdenum layers of the polarization-optical element is 2.478 nm/cos α, and wherein the layer thickness of the silicon layers of the polarization-optical element is 4.406 nm/cos α.

9. The projection exposure system according to claim 1 , wherein the polarization-optical element is arranged such that the intensity of the transmitted fraction of the EUV light amounts to at least 10% of the intensity of the reflected fraction.

10. The projection exposure system according to claim 9 , wherein the polarization-optical element is arranged such that the intensity of the transmitted fraction of the EUV light amounts to at least 15% of the intensity of the reflected fraction.

11. The projection exposure system according to claim 10 , wherein the polarization-optical element is arranged such that the intensity of the transmitted fraction of the EUV light amounts to at least 20% of the intensity of the reflected fraction.

12. The projection exposure system according to claim 1 , wherein the layer structure of the polarization-optical element has at least one non-uniform thick layer, or wherein at least one of the layers of the layer structure has a surface that is exposed to the EUV light beam, which surface comprises several partial surfaces which are inclined to each other.