IP Library Granted Patent US 9,806,006
Granted Patent B2
US 9,806,006 · App. 11/916,242 · Granted Oct 31, 2017

Etch isolation LPCC/QFN strip

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Quick Facts
Patent No.
US 9,806,006
App. No.
11/916,242
Granted
Oct 31, 2017
Kind
B2
Abstract

Various structures and fabrication methods for leadless plastic chip carrier (QFN) packages which utilize carriers in strip format, wherein the leads (or terminals) are formed to be electrically isolated from one another within each unit and in which the units are formed to be electrically isolated from one another within the strip using chemical etching techniques.

Claims (60)

1. A method of forming a plurality of leadless chip carriers, the method comprising:

forming a carrier strip comprising

a plurality of die attach pads,

a plurality of dice, respectively mounted to the die attach pads,

a leadframe, wherein the leadframe at least partially encircles the die attach pads,

interconnects, such as gold wires, to connect the die to respective terminals on the leadframe, and

a molding, wherein the molding encapsulates an upper surface of the die attach pads, the dice, the interconnecting gold wires, and the leadframe;

forming an etch mask on a portion of a bottom surface of the leadframe;

forming a plating on a bottom surface of the die attach pads, the molding and a portion of the bottom surface of the leadframe where an etch mask is not formed;

removing at least a portion of the etch mask from the bottom surface of the leadframe to expose a portion of the bottom side of the leadframe; and

etching the leadframe such that a portion of a bottom surface of the molding is exposed.

2. The method of claim 1 , further comprising singulating the leadless chip carriers.

3. The method of claim 2 , wherein the singulating is saw singulating.

4. The method of claim 1 , wherein the etch mask is formed at dambar regions of the leadframe.

5. The method of claim 1 , wherein the leadframe consists of copper and the plating comprises a tin or tin lead material.

6. The method of claim 1 , further comprising forming an internal plating on a top surface of the terminals on the leadframe, wherein the internal plating comprises at least one of Ag, NiAu and NiPd.

7. A method of forming a plurality of leadless chip carriers, the method comprising:

forming a carrier strip comprising

a plurality of die attach pads,

a plurality of dice, respectively mounted to the die attach pads,

a leadframe, wherein the leadframe at least partially encircles the die attach pads,

interconnects, such as gold wires, to connect the die to respective terminals on the leadframe, and

a molding, wherein the molding encapsulates an upper surface of the die attach pads, the dice, the interconnecting gold wires, and the leadframe;

forming a plating on a bottom surface of the die attach pads, the molding and the leadframe;

forming an etch mask on a portion of a bottom surface of the leadframe such that the etch mask is not formed at dambar regions of the leadframe;

removing the plating at the dambar regions of the leadframe;

etching the leadframe at the dambar regions of the leadframe such that a portion of a bottom surface of the molding is exposed; and

removing the etch mask.

8. The method of claim 7 , further comprising singulating the leadless chip carriers.

9. The method of claim 8 , wherein the singulating is saw singulating.

10. The method of claim 7 , wherein the leadframe consists of copper and the plating comprises a tin or tin lead material.

11. The method of claim 7 , further comprising forming an internal plating on a top surface of the terminals on the leadframe, wherein the internal plating comprises at least one of Ag, NiAu and NiPd.

12. A method of forming a plurality of leadless chip carriers, the method comprising:

forming a carrier strip comprising

a plurality of die attach pads,

a plurality of dice, respectively mounted to the die attach pads,

a leadframe, wherein the leadframe at least partially encircles the die attach pads and the leadframe is plated with a finish,

interconnects, such as gold wires, to connect the die to respective terminals on the leadframe, and

a molding, wherein the molding encapsulates an upper surface of the die attach pads, the dice, the interconnecting gold wires and the leadframe;

forming an etch mask on a portion of a bottom surface of the leadframe such that the etch mask is not formed at dambar regions of the leadframe;

removing the finish at the dambar regions of the leadframe;

etching the leadframe at the dambar regions of the leadframe such that a portion of an upper layer of the finish is exposed;

removing the exposed portion of the finish such that a portion of a bottom surface of the molding is exposed; and

removing the etch mask.

13. The method of claim 12 , further comprising singulating the leadless chip carriers.

14. The method of claim 13 , wherein the singulating is saw singulating.

15. The method of claim 12 , wherein the etch mask is formed at dambar regions of the leadframe.

16. The method of claim 12 , wherein the leadframe consists of copper.

17. The method of claim 12 , wherein the leadframe plating comprises at least one of NiPd and NiPdAu.

18. A method of forming a plurality of leadless chip carriers, the method comprising:

forming a chip carrier strip comprising a plurality of die attach pads,

a plurality of dice respectively mounted to the die attach pads,

a leadframe, wherein the leadframe includes dambar regions and lead pads and wherein the leadframe at least partially encircles the die attach pads,

interconnects, wherein the interconnects connect each die of the plurality of dice to respective lead pads on the leadframe, and

a molding, wherein the molding encapsulates an upper surface of the die attach pads, the dice, and the leadframe;

performing an etching process to selectively remove portions of the leadframe corresponding to the dambar regions;

wherein the etching, process to remove the portions of the leadframe directly exposes a portion of a bottom surface of the molding;

and a singulation process to mechanically isolate individual chip carriers of the chip carrier strip.

19. The method of claim 18 , wherein the individual chip carriers are electrically isolated from one another prior to the singulation process.

20. The method of claim 19 , further comprising functionally testing the individual chip carriers prior to the singulation process.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE ADD ANNEX INADVERTENTLY LEFT OUT ORIGINAL ASSIGNMENT DOCUMENT PREVIOUSLY RECORDED AT REEL: 037880 FRAME: 0534. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jul 8, 2016
From: UTAC HONG KONG LIMITED
To: UTAC HEADQUARTERS PTE. LTD.
Reel/Frame 039822/0591 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 23, 2016
From: UTAC HONG KONG LIMITED
To: UTAC HEADQUARTERS PTE. LTD.
Reel/Frame 037880/0534 →
CHANGE OF NAME Recorded Oct 29, 2010
From: ASAT LIMITED
To: UTAC HONG KONG LIMITED
Reel/Frame 025221/0847 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 7, 2010
From: LI, TUNG LOK
To: UTAC HONG KONG LIMITED
Reel/Frame 025104/0150 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 7, 2010
From: KWAN, KIN PUI
To: UTAC HONG KONG LIMITED
Reel/Frame 025111/0339 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS - SECOND PRIORITY Recorded Jun 29, 2010
From: UTAC HONG KONG LIMITED
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024599/0827 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS - SECOND PRIORITY Recorded Jun 29, 2010
From: UTAC HONG KONG LIMITED
To: THE HONGKONG AND SHANGHAI BANKING CORPORATION LIMITED, AS SECURITY AGENT
Reel/Frame 024611/0097 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS - FIRST PRIORITY Recorded Jun 29, 2010
From: UTAC HONG KONG LIMITED
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024599/0743 →