Plasma nitriding method, method for manufacturing semiconductor device and plasma processing apparatus
View Patent ↗A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots.
1. A method for forming a gate insulating film of a semiconductor device, comprising:
directly nitriding a silicon target layer of a target object to form a silicon nitride gate insulation film on the surface of the silicon target layer;
wherein the nitriding comprises:
generating a high-density plasma of a nitrogen-containing gas in an electromagnetic field inside a process container of a plasma processing apparatus, and
directly introducing N from the high density plasma into the silicon target layer;
wherein
the electromagnetic field is generated by supplying microwaves into the process chamber from a planar antenna having a plurality of slots,
a process temperature of the nitriding is 600° C. to 900° C., and
a process pressure of the nitriding is 6.7 to 1,333 Pa.
2. The method according to claim 1 , further comprising:
heating the silicon nitride gate insulation film formed on the surface of the silicon target layer at a temperature of not less than 500° C.
3. The method according to claim 1 , wherein the silicon of the silicon target layer is single-crystalline silicon having a substantially (110) surface.
4. The method according to claim 1 , wherein a film thickness of the silicon nitride gate insulating film is 0.5 to 3 nm.
5. The method according to claim 1 , wherein the microwave-excited high-density plasma has a plasma density of 1×10 10 to 5×10 12 /cm 3 .
6. The method according to claim 1 , further comprising:
performing a heating process at a temperature of from 800° C. to 1,100° C., after the gate insulating film is formed.
7. The method according to claim 1 , wherein the nitrogen-containing gas is selected from the group consisting of NH 3 gas, a gas mixture of N 2 and H 2 , and hydrazine.
8. The method according to claim 1 , wherein the nitrogen-containing gas is NH 3 gas.
9. The method according to claim 1 , wherein the process pressure of the nitriding process is 20 Pa or higher.
10. The method according to claim 1 , wherein the temperature of the nitriding process is 600° C. to 800° C.
11. The method according to claim 2 , wherein the temperature of the nitriding process is preset to suppress an increase in intermediate nitride at an interface between the silicon nitride gate insulation film and the silicon target layer during the heating at a temperature of not less than 500° C.