Bridged gate FinFet
View Patent ↗In a fin-type field effect transistor (FinFET) structure, a gate strap is positioned on the top of a gate conductor and runs along the gate conductor. The top of the gate strap is positioned a greater height above the top surface of the substrate than the top of the fin cap. The gate strap is conformal and, therefore, the top of the portion of the gate strap that crosses the fin cap has a greater height above the top surface of the substrate than top portions of other regions of the gate strap. Further, the material of the gate strap can have a different work function than a material of the gate conductor.
1. A fin-type field effect transistor (FinFET) structure comprising:
a substrate having a top surface;
a fin having a bottom positioned on said top surface of said substrate, wherein said fin protrudes from said top surface of said substrate, and wherein said fin has a fin length running parallel to said top surface of said substrate, a fin height above said top surface of said substrate that is less than said fin length, and a fin width running parallel to said top surface of said substrate and running perpendicular to said fin length, wherein said fin width is less than said fin height;
a fin cap positioned on a top of said fin and running along said fin, wherein said fin cap has a fin cap width equal to said fin width, and fin cap height that is less than said fin height;
a gate conductor having a bottom positioned on said top surface of said substrate, wherein said gate conductor has a gate conductor length running parallel to said top of said substrate that is perpendicular to said fin length such that said gate conductor intersects said fin, wherein said gate conductor has a gate conductor height above said top surface of said substrate that is greater than said fin height and less than a height that a top of fin cap is positioned above said top surface of said substrate;
a gate strap positioned on a top of said gate conductor and running along said gate conductor, wherein said gate strap has a gate strap width equal to said gate conductor width, and wherein a top of said gate strap is positioned a greater height above said top surface of said substrate than said top of said fin cap; and
an insulator separating said gate conductor and said gate strap from said fin and said fin cap;
wherein a region of said fin that is positioned below said gate conductor comprises a semiconductor.
2. The FinFET structure according to claim 1 , all the limitations of which are incorporated herein by reference, wherein a top of a portion of said gate strap that crosses said fin cap has a greater height above said top surface of said substrate than top portions of other regions of said gate strap.
3. The FinFET structure according to claim 1 , all the limitations of which are incorporated herein by reference, wherein said FinFET structure comprises multiple ones of said fin and said fin cap.
4. A fin-type field effect transistor (FinFET) structure comprising:
a substrate having a top surface;
a fin having a bottom positioned on said top surface of said substrate, wherein said fin protrudes from said top surface of said substrate, and wherein said fin has a fin length running parallel to said top surface of said substrate, a fin height above said top surface of said substrate that is less than said fin length, and a fin width running parallel to said top surface of said substrate and running perpendicular to said fin length, wherein said fin width is less than said fin height;
a fin cap positioned on a top of said fin and running along said fin, wherein said fin cap has a fin cap width equal to said fin width, and fin cap height that is less than said fin height;
a gate conductor having a bottom positioned on said top surface of said substrate, wherein said gate conductor has a gate conductor length running parallel to said top of said substrate that is perpendicular to said fin length such that said gate conductor intersects said fin, wherein said gate conductor has a gate conductor height above said top surface of said substrate that is less than said fin height;
a gate strap positioned on a top of said gate conductor and running along said gate conductor, wherein said gate strap has a gate strap width equal to said gate conductor width, wherein a top of said gate strap is positioned a greater height above said top surface of said substrate than said top of said fin cap, and wherein a material of said gate strap has a different work function than a material of said gate conductor; and
an insulator separating said gate conductor and said gate strap from said fin and said fin cap;
wherein a region of said fin that is positioned below said gate conductor comprises a semiconductor.
5. The FinFET structure according to claim 4 , all the limitations of which are incorporated herein by reference, wherein a top of a portion of said gate strap that crosses said fin cap has a greater height above said top surface of said substrate than top portions of other regions of said gate strap.
6. The FinFET structure according to claim 4 , all the limitations of which are incorporated herein by reference, wherein said FinFET structure comprises multiple ones of said fin and said fin cap.