Intra-chip power and test signal generation for use with test structures on wafers
The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter at the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.
1. An arrangement for evaluating a fabrication of at least a partially-fabricated wafer, wherein the arrangement comprises:
a circuit element provided within an active region of a die of the wafer;
a power receiver provided in the active region of the die and connected to the circuit element, wherein the power receiver is configured to generate a power signal for the circuit element in response to receiving a power input;
a test/trigger receiver provided in the active region of the die and connected to the circuit element, wherein the test/trigger receiver is configured to generate a trigger signal for the circuit element in response to receiving a signal input;
wherein in response to receiving the power signal and the trigger signal, the circuit element is configured to exhibit an electrical activity that is detectable by a test probe without affecting a usability of a chip that is formed from the die, and wherein the electrical activity is indicative of one or more characteristics that are a result of the fabrication.
2. The arrangement of claim 1 , wherein the test/trigger receiver is configured to generate the trigger signal for the circuit element in response to receiving an energy beam.
3. The arrangement of claim 1 , wherein the test/trigger receiver is configured to generate the trigger signal for the circuit element in response to receiving a modulating energy beam.
4. The arrangement of claim 1 , wherein the power receiver is configured to generate a power signal for the circuit element in response to receiving an energy beam.
5. The arrangement of claim 1 , wherein the power receiver is configured to receive the power input without contacting a source of the power input.
6. The arrangement of claim 1 , wherein the power receiver includes a voltage step-up to increase a voltage of the power signal before it is supplied to the circuit element.
7. The arrangement of claim 1 , wherein the power receiver includes a photodiode.
8. The arrangement of claim 1 , wherein:
the power receiver is configured to generate a power signal for the circuit element in response to receiving a constant laser beam;
the test/trigger receiver is configured to generate the trigger signal for the circuit element in response to receiving a modulating laser beam.
9. The arrangement of claim 1 , wherein the circuit element is configured to exhibit the electrical activity corresponding to a detectable production of photons.
10. The arrangement of claim 1 , wherein the circuit element is configured to exhibit the electrical activity corresponding to an output signal from the circuit element.