IP Library Granted Patent US 7,619,306
Granted Patent B2
US 7,619,306 · App. 11/936,179 · Granted Nov 17, 2009

Semiconductor device having projecting electrode formed by electrolytic plating, and manufacturing method thereof

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Quick Facts
Patent No.
US 7,619,306
App. No.
11/936,179
Granted
Nov 17, 2009
Kind
B2
Abstract

A semiconductor device includes a semiconductor substrate, and a plurality of wiring lines provided on one side of the semiconductor substrate, each of the wiring lines having a connection pad portion. An overcoat film is provided on the wiring lines and the one side of the semiconductor substrate, The overcoat film has a plurality of openings in parts corresponding to the connection pad portions of the wiring lines. A plurality of foundation metal layers are respectively provided on inner surfaces of the openings of the overcoat film and electrically connected to the pad portions of the wiring lines. A plurality of projecting electrodes are respectively provided on the foundation metal layers in the openings of the overcoat film.

Claims (19)

1. A semiconductor device comprising:

a semiconductor substrate;

a plurality of wiring lines provided on one side of the semiconductor substrate, each of the wiring lines having a connection pad portion;

an overcoat film provided on the wiring lines and having a plurality of circular openings in parts corresponding to the connection pad portions of the wiring lines, each of the circular openings having an inner surface;

a plurality of foundation metal layers respectively provided on the inner surfaces of the circular openings of the overcoat film and electrically connected to the connection pad portions of the wiring lines; and

a plurality of projecting electrodes having circular cross-sections and respectively provided on the foundation metal layers in the circular openings of the overcoat film;

wherein each of the foundation metal layers has a peripheral edge portion located on top of the overcoat film around the opening of the overcoat film;

wherein each of the projecting electrodes includes a lower projecting electrode portion provided on the connection pad portion via the foundation metal layer in the opening of the overcoat film, and an upper projecting electrode portion continuing to and provided on the lower projecting electrode portion, the upper projecting electrode portion having a peripheral edge portion provided on the peripheral edge portion of the foundation metal layer; and

wherein a solder ball or a surface treated layer is provided on an outer surface of the upper projecting electrode portion of each of the projecting electrodes.

2. A semiconductor device comprising:

a semiconductor substrate including an integrated circuit on a surface thereof and a plurality of pads;

an insulating layer covering the pads and including openings corresponding to the pads;

a plurality of wiring lines provided on the insulating layer, each of the wiring lines having a connection pad portion;

an overcoat film provided on the wiring lines and having a plurality of circular openings in parts corresponding to the connection pad portions of the wiring lines, each of the circular openings having an inner surface;

a plurality of foundation metal layers respectively provided on the inner surfaces of the circular openings of the overcoat film and electrically connected to the connection pad portions of the wiring lines; and

a plurality of projecting electrodes having circular cross-sections and respectively provided on the foundation metal layers in the circular openings of the overcoat film;

wherein each of the foundation metal layers has a peripheral edge portion located on top of the overcoat film around the opening of the overcoat film;

wherein each of the projecting electrodes includes a lower projecting electrode portion provided on the connection pad portion via the foundation metal layer in the opening of the overcoat film, and an upper projecting electrode portion continuing to and provided on the lower projecting electrode portion, the upper projecting electrode portion having a peripheral edge portion provided on the peripheral edge portion of the foundation metal layer; and

wherein a solder ball or a surface treated layer is provided on an outer surface of the upper projecting electrode portion of each of the projecting electrodes.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 18, 2016
From: TERA PROBE, INC.
To: AOI ELECTRONICS CO., LTD.
Reel/Frame 040371/0554 →
CORRECTIVE ASSIGNMENT TO CORRECT THE RECEIVING PARTY FULL CITY NAME AND ZIP CODE PREVIOUSLY RECORDED ON REEL 037073 FRAME 0232. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Nov 30, 2015
From: TERAMIKROS, INC.
To: TERA PROBE, INC.
Reel/Frame 037166/0846 →
MERGER Recorded Nov 9, 2015
From: TERAMIKROS, INC.
To: TERA PROBE, INC.
Reel/Frame 037073/0232 →
CHANGE OF OWNERSHIP BY CORPORATE SEPARATION-TO CORRECT ASSIGNEE'S ADDRESS ON REEL 027465, FRAME 0812 Recorded Jan 6, 2012
From: CASIO COMPUTER CO., LTD.
To: TERAMIKROS, INC.
Reel/Frame 027492/0449 →
CHANGE OF OWNERSHIP BY CORPORATE SEPARATION Recorded Jan 3, 2012
From: CASIO COMPUTER CO., LTD.
To: TERAMIKROS, INC.
Reel/Frame 027465/0812 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 7, 2007
From: KANEKO, NORIHIKO
To: CASIO COMPUTER CO., LTD.
Reel/Frame 020078/0348 →