RF substrate bias with high power impulse magnetron sputtering (HIPIMS)

1. A method for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm 2 comprising:

operating a power supply to charge the magnetron;

administering a first pulse to the magnetron;

discharging the magnetron according to a bias pulse from a RF electrical bias device operably connected to the substrate; and

synchronizing a frequency and a time delay of the first pulse with the bias pulse using a synchronization device operably connected to the power supply, wherein the bias pulse is administered before the first pulse with the time delay between 0.1 μs to 500 μs.

2. The method according to claim 1 , wherein a duty cycle for the first pulse is between 0.01% and 20%, and the frequency in the range of 1 Hz to 20 kHz.

3. The method according to claim 1 , wherein a duty cycle for the first pulse is between 2% and 50%.

4. The method according to claim 1 , further comprising:

a matching unit matching a first impedance of a plasma with a second impedance of the substrate, wherein the matching unit is operably connected between RF electrical bias device and a chuck that holds the substrate.

5. The method according to claim 4 , further comprising:

a monitoring device monitoring an RF self-bias at the chuck, wherein the monitoring device is operably connected to the chuck that holds the substrate and the chuck is operably connected between the RF electrical bias device and the substrate.