Circuit arrangement for frequency modulation
View Patent ↗A circuit arrangement for frequency modulation is provided, which includes a voltage-controlled oscillator having at least one varactor diode that is driven by a drive signal, wherein a capacitance of the varactor diode depends on the drive signal, includes a modulating unit that creates a modulation signal for frequency modulation of the voltage-controlled oscillator, and includes a drive unit that generates the drive signal for the at least one varactor diode from the modulation signal, wherein the drive unit generates the drive signal from the modulation signal in such a manner that a linear relationship results between the modulation signal and the capacitance of the varactor diode.
1. A circuit arrangement for frequency modulation comprising:
a voltage-controlled oscillator having at least one varactor diode that is driven by a drive signal, a capacitance of the varactor diode being dependend on the drive signal;
a modulating unit that creates a modulation signal for frequency modulation of the voltage-controlled oscillator; and
a drive unit that generates the drive signal for the at least one varactor diode from the modulation signal;
wherein the drive unit includes a component whose current versus voltage characteristic curve is a second order polynomial and generates the drive signal based on the modulation signal so that a linear relationship results between the modulation signal and the capacitance of the at least one varactor diode.
2. The circuit arrangement according to claim 1 , wherein the drive unit includes a MOS transistor wired as a diode or an NMOS transistor wired as a diode.
3. A circuit arrangement for frequency modulation comprising:
a voltage-controlled oscillator having at least one varactor diode that is driven by a drive signal, a capacitance of the varactor diode being dependend on the drive signal;
a modulating unit that creates a modulation signal for frequency modulation of the voltage-controlled oscillator; and
a drive unit that generates the drive signal for the at least one varactor diode from the modulation signal,
wherein the drive unit generates the drive signal based on the modulation signal so that a linear relationship results between the modulation signal and the capacitance of the at least one varactor diode,
wherein the drive unit includes a MOS transistor wired as a diode or an NMOS transistor wired as a diode, and
wherein a resistor is connected in parallel to the MOS transistor wired as a diode.
4. The circuit arrangement according to claim 2 , wherein the drive unit includes a field-effect transistor to whose gate terminal the modulation signal is applied, wherein the drain-source path of the field-effect transistor is connected in series with the MOS transistor wired as a diode between a supply voltage and a reference voltage.
5. The circuit arrangement according to claim 4 , further comprising a current-to-voltage converter that produces a voltage from a current flowing through the drain-source path of the field-effect transistor, wherein the voltage constitutes the drive signal.
6. The circuit arrangement according to claim 4 , further comprising a current mirror circuit, which mirrors a current flowing through the drain-source path of the field-effect transistor and imposes it on a resistor, wherein the voltage establishing itself at the resistor constitutes the drive signal.
7. The circuit arrangement according to claim 6 , further comprising a bias unit, which produces a bias current that is superimposed on the current produced by the current mirror circuit.