Multi-die memory, apparatus and multi-die memory stack

1. A multi-die memory, comprising:

a first die comprising a first group of memory banks and a first common memory interface; and

a second die comprising a second group of memory banks and a second common memory interface;

wherein the first group of memory banks and the second group of memory banks are coupled to the first common memory interface and to the second common memory interface which are each configured to selectively couple the first group of memory banks and the second group of memory banks with an external connection, and wherein one of the first common memory interface and the second common memory interface is deactivated and the other of the first common memory interface and the second common memory interface operates to selectively couple the first group of memory banks and the second group of memory banks with the external connection; and

wherein the first die and the second die are arranged in a common package.

2. The multi-die memory according to claim 1 , wherein the first die and the second die are stacked,

wherein the first common memory interface is deactivated, and

wherein the first group of memory banks is connected to the second common memory interface via a die-to-die connection which is at least approximately perpendicular to a main surface of the stacked dies.

3. The multi-die memory according to claim 1 , wherein the multi-die memory is configured such that address lines of the first group of memory banks are separated from address lines of the second group of memory banks with the exception of an interconnection between the first die and the second die.

4. The multi-die memory according to claim 1 , wherein the multi-die memory is configured such that data lines of the first group of memory banks are separated from data lines of the second group of memory banks with the exception of an interconnection between the first die and the second die,

wherein the interconnection is coupled to the data lines of the first group of memory banks and to the data lines of the second group of memory banks.

5. The multi-die memory according to claim 1 , wherein the multi-die memory comprises a die-to-die data path,

wherein the first group of memory banks comprises a group-internal data path that is coupled to the die-to-die data path to receive data from the die-to-die data path or to provide data to the die-to-die data path;

wherein the second group of memory banks comprises a group-internal data path that is coupled to the die-to-die data path to receive data from the die-to-die data path or to provide data to the die-to-die data path;

wherein the die-to-die data path is configured to be shared at least by the first group of memory banks and the second group of memory banks; and

wherein the group-internal data path of the first group of memory banks and the group-internal data path of the second group of memory banks are configured such that a data path line of the group-internal data path of the first group of memory channels can represent a different data value than a data path line of the group-internal data path of the second group of memory channels coupled to a same data path line of the die-to-die data path.

6. The multi-die memory according to claim 5 , wherein the group-internal spine data path of the first group of memory banks is parallel to the group-internal spine data path of the second group of memory banks; and

wherein the group-internal spine data path of the first group of memory banks is decoupled from the group-internal spine data path of the second group of memory banks to be capable of carrying different data than the group-internal spine data path of the second group of memory banks.

7. The multi-die memory according to claim 1 , wherein the multi-die memory comprises a die-to-die data path;

wherein the first group of memory banks comprises a group-internal data path which is coupled to the die-to-die data path to receive data from the die-to-die data path or to provide data to the die-to-die data path;

wherein the second group of memory banks comprises a group-internal data path which is coupled to the die-to-die data path to receive data from the die-to-die data path or to provide data to the die-to-die data path;

wherein the multi-die memory is configured such that the die-to-die data path carries on a shared data path line data for the first group of memory banks and data for a second group of memory banks; and

wherein the multi-die memory is configured such that the group-internal data path of the first group of memory banks carries only data for the first group of memory banks.

8. The multi-die memory according to claim 5 , wherein the die-to-die data path is configured to carry a higher data rate than the group-internal data path.

9. The multi-die memory according to claim 1 , wherein the multi-die memory comprises a third die;

wherein the third die comprises a third group of memory banks and a third common memory interface, and wherein the third common memory interface is deactivated in the third die;

wherein the first die, the second die and the third die are assembled in the common package;

wherein the first group of memory banks is coupled to the operative common memory interface via a first die-to-die connection;

wherein the third group of memory banks is coupled to the operative common memory interface via a second die-to-die connection; and

wherein the first die-to-die connection is separate from the second die-to-die connection.

10. The multi-die memory according to claim 9 , wherein the operative common memory interface is configured to selectively drive data to the first die-to-die connection or to the second die-to-die connection in dependence on whether an access to the first group of memory banks or an access to the third group of memory banks is requested.

11. The multi-die memory according to claim 9 , wherein the operative common memory interface is configured to selectively forward data from the first die-to-die connection or from the third die-to-die connection to the external connection.

12. The multi-die memory according to claim 1 , wherein each group of memory banks comprises at least two memory banks;

wherein different memory banks comprise separate memory arrays; and

wherein each of the memory banks is configured such that word lines of memory arrays of different memory banks can be activated independently.

13. The multi-die memory according to claim 1 , wherein the operative common memory interface is configured to interface the first group of memory banks and the second group of memory banks to the external connection such that external electrical characteristics of the multi-die memory match external electrical characteristics of a single die memory comprising a plurality of groups of memory banks arranged on a single die.