IP Library Granted Patent US 7,700,925
Granted Patent B2
US 7,700,925 · App. 11/966,312 · Granted Apr 20, 2010

Techniques for providing a multimode ion source

Assignee: Varian Semiconductor Equipment Associates, Inc.
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Quick Facts
Patent No.
US 7,700,925
App. No.
11/966,312
Granted
Apr 20, 2010
Kind
B2
Abstract

Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.

Claims (21)

1. An apparatus for ion implantation, the apparatus comprising:

an ion source comprising hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.

2. The apparatus of claim 1 , wherein the ion source operates in a first mode using the hot cathode, wherein the first mode is a hot mode operation.

3. The apparatus of claim 1 , wherein the ion source operates in a second mode using the high frequency plasma generator, wherein the second mode of operation is a cold mode operation.

4. The apparatus of claim 3 , wherein the high frequency plasma generator comprises at least one of an inductively coupled plasma (ICP) generator, a helicon plasma generator, and a microwave plasma generator.

5. The apparatus of claim 1 , wherein the ion source operates in a third mode of operation using the hot cathode and the high frequency plasma generator.

6. The apparatus of claim 1 , wherein the high frequency plasma generator is coupled to the ion source by at least one plasma pipe.

7. The apparatus of claim 6 , wherein the high frequency plasma generator is remotely controlled.

8. A multi-mode ion source, the ion source comprising:

a chamber;

a hot cathode; and

a high frequency plasma generator;

wherein the ion source has multiple modes of operation.

9. The multi-mode ion source of claim 8 , wherein the ion source operates in a first mode using the hot cathode.

10. The multi-mode ion source of claim 8 , wherein the ion source operates in a second mode using the high frequency plasma generator.

11. The multi-mode ion source of claim 10 , wherein the high frequency plasma generator comprises at least one of an inductively coupled plasma (ICP) generator, a helicon plasma generator, and a microwave plasma generator.

12. A method for generating ions in an ion source, the method comprising:

providing a first mode of operation based on a hot cathode; and

providing a second mode of operation based on a high frequency plasma generator.

13. The method of claim 12 , wherein the high frequency plasma generator comprises at least one of an inductively coupled plasma (ICP) generator, a helicon plasma generator, and a microwave plasma generator.

14. The method of claim 12 , further comprising providing a third mode of operation based on the hot cathode and the high frequency plasma generator.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2007
From: RADOVANOV, SVETLANA B.; KOO, BON-WOONG; SINCLAIR, FRANK; BENVENISTE, VICTOR M.
To: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Reel/Frame 020301/0685 →
Continuity (1)
Related Publication 20090166554A1 · Jul 2, 2009