Method for structuring a substrate using a metal mask layer formed using a galvanization process
View Patent ↗A method and intermediate product for structuring a substrate is disclosed. At least one seed layer including a first metal compound is positioned at least partially on the substrate. The seed layer is subjected to a solution comprising ions of a second metal compound. The ions are reduced in the solution by reduction means so that the second metal compound is deposited as mask layer on the seed layer.
1. A method for structuring a substrate, the method comprising:
forming at least one seed layer comprising a first metal compound at least partially on the substrate;
subjecting the seed layer to a solution comprising ions of a second metal compound, the ions being reduced in the solution using an acid in a galvanization process without an external electrical field so that the second metal compound is deposited as a mask layer on the seed layer; and
after subjecting the seed layer to a solution etching the substrate using the mask layer as an etch mask thereby structuring the substrate.
2. The method according to claim 1 , wherein the first metal compound and the second metal compound are identical.
3. The method according to claim 1 , wherein the seed layer comprises a metal-organic compound.
4. The method according to claim 3 , wherein the metal-organic compound comprises a compound in an aliphatic group or an aromatic group.
5. The method according to claim 3 , wherein the metal-organic compound comprises at least one compound selected from the group consisting of a compound comprising copper, a compound comprising titanium, a compound comprising tungsten, copper(II)phtalocyanin, copper(II)gluconate and copper(II)-4-cyclohexyl-butyrate.
6. The method according to claim 1 , wherein the seed layer further comprises a support polymer, a linker and/or a solvent.
7. The method according to claim 1 , wherein the seed layer has a thickness between about 1 nm and about 30 nm.
8. The method according to claim 7 , wherein the seed layer has a thickness between about 5 and about 10 nm.
9. The method according to claim 1 , wherein the second metal compound ions are present in the solution as an oxidized form in a salt.
10. The method according to claim 9 , wherein the solution comprises at least a salt from the group consisting of salts soluble in water, salts soluble in a mixture of water and a tenside, and salts soluble in a mixture of water and an organic solvent.
11. The method according to claim 9 , wherein the solution comprises copper (I)thiocyanate, copper(II)sulfate and/or copper(II)chloride.
12. The method according to claim 1 , wherein the solution further comprises additives for homogenization of the metal deposition and/or a buffer.
13. The method according to claim 1 , wherein the reduction agent comprises ascorbinic acid and/or citric acid.
14. The method according to claim 1 , wherein the solution further comprises as a solvent at least one of water, a mixture of water with an tenside, an organic solvent, a mixture of water with an organic solvent and acetonitrile.
15. The method according to claim 1 , wherein the solution provides a redox reactive compound for a currentless galvanization of the seed layer.
16. The method according to claim 1 , further comprising structuring the seed layer with a resist mask above the seed layer.
17. The method according to claim 16 , wherein the resist mask has a thickness between about 1 nm and about 50 nm.
18. The method according to claim 1 , wherein the substrate comprises a hard mask.
19. The method according to claim 1 , further comprising removing remains of a metal comprising layer by an oxidizing process step.
20. The method according to claim 1 , wherein the substrate is part of a semiconductor device.
21. The method according to claim 20 , wherein the semiconductor device comprises a microprocessor, a DRAM-chip, a Flash-chip, a biochip, a mask, a microelectro-mechanical device or an opto-electronic device.
22. A method for structuring a substrate, the method comprising:
forming a seed layer comprising a nucleation compound at least partially on the substrate, the nucleation compound comprising a first metal compound and providing nucleation points; and
depositing a mask layer comprising a second metal compound on the seed layer by subjecting the nucleation compound to a solution comprising ions of a second metal compound, the ions being reduced in the solution using an acid in a galvanization process without an external electric field; and
etching the substrate using the mask layer as an etch mask.