Integrated semiconductor substrate structure using incompatible processes
View Patent ↗A plurality of FPGA dice is disposed upon a semiconductor substrate. In order both to connect thousands of signal interconnect lines between the plurality of FPGA dice and to supply the immense power required, it is desired that the substrate construction include two different portions, each manufactured using incompatible processes. The first portion is a signal interconnect structure containing a thin conductor layers portion characterized as having a plurality of thin, fine-pitch conductors. The second portion is a power connection structure that includes thick conductors and vertical through-holes. The through-holes contain conductive material and supply power to the FPGA dice from power bus bars located at the other side of the semiconductor substrate. The portions are joined at the wafer level by polishing the wafer surfaces within a few atoms of flatness and subsequent cleaning. The portions are then fusion bonded together or combined using an adhesive material.
1. An apparatus comprising:
a power connection structure having a semiconductor power through-hole portion and a thick conductor layers portion, wherein the semiconductor power through-hole portion has a semiconductor body and a plurality of through-holes extending from a first surface of the semiconductor body to a second surface of the semiconductor body, wherein the thick conductor layers portion is disposed upon the semiconductor power through-hole portion, wherein the thick conductor layers portion includes an insulating layer that has a planar surface, and wherein the thick conductor layers portion has a horizontal conductor that is at least two microns thick;
an interconnect structure having a thin conductor layers portion and a plurality of surface mount attachment structures, the thin conductor layers portion includes a plurality of conductive vias and has a planar surface fusion bonded to the planar surface of the insulating layer of the thick conductor layers portion of the power connection structure to create a plurality of electrical connections between the power connection structure and the interconnect structure through the plurality of conductive vias, wherein the thin conductor layers portion has no horizontal conductor that is more than one micron thick; and
a plurality of integrated circuit dice surface mounted to the surface mount attachment structures of the interconnect structure.
2. The apparatus of claim 1 , wherein the planar surfaces of the interconnect structure and the power connection structure physically contact each other within atomic dimensions such that direct bonds exist between the interconnect structure and the power connection structure without any adhesive material being disposed between the interconnect structure and the power connection structure.
3. The apparatus of claim 1 , wherein adhesive material is disposed between the interconnect structure and the power connection structure.
4. The apparatus of claim 1 , wherein the interconnect structure includes no crystalline semiconductor material.
5. The apparatus of claim 1 , wherein the power connection structure has a first area and a second area, wherein the first area has a first density of through-holes, wherein the second area has a second density of through-holes, and wherein the first density is substantially greater than the second density.
6. The apparatus of claim 1 , wherein a coolant through-hole extends through the power connection structure and through the interconnect structure, and wherein a liquid coolant flows through the coolant through-hole.
7. The apparatus of claim 1 , wherein there is no gap between the power connection structure and the interconnect structure.
8. The apparatus of claim 2 , wherein the power connection structure has a width, a length and a height, wherein the width is at least two inches and wherein the length is at least one inch.
9. The apparatus of claim 2 , wherein each through-hole contains a conductive material, and wherein each through-hole has a diameter of at least sixty microns.
10. The apparatus of claim 2 , wherein a first of the plurality of integrated circuit dice is connected by conductors of the interconnect structure to a second of the plurality of integrated circuit dice.
11. An apparatus comprising:
a first surface mount attachment structure;
a second surface mount attachment structure that is connected to the first surface mount attachment structure through a thin horizontally extending conductor, wherein the thin horizontally extending conductor has a thickness of no more than two microns;
a third surface mount attachment structure; and
means for conducting power through a plurality of conductive vias, then through a thick horizontally extending conductor, and to the third surface mount attachment structure, the thick horizontally extending conductor having a width of at least twenty five microns.
12. The apparatus of claim 11 , wherein the means includes a part of an interconnect structure and a power connection structure, wherein the interconnect structure includes the thin horizontally extending conductor, and wherein the power connection structure includes the thick horizontally extending conductor, and wherein the interconnect structure is fusion bonded to an insulating layer of the power connection structure to create a plurality of electrical connections between the power connection structure and the interconnect structure.
13. The apparatus of claim 1 , wherein the interconnect structure fusion bonded to the power connection structure is a fusion bonded structure, and wherein the fusion bonded structure is annealed.
14. The apparatus of claim 1 , wherein the thin conductor layers portion that is fusion bonded to the thick conductor layers portion is sectioned to create a plurality of semiconductor substrates, and wherein each of the plurality of integrated circuit dice is surface mounted to one of the plurality of semiconductor substrates.
15. The apparatus of claim 1 , wherein the interconnect structure and the power connection structure are together less than one thousand four hundred microns thick.
16. The apparatus of claim 11 , wherein the means includes a part of an interconnect structure and a power connection structure, wherein the interconnect structure is fusion bonded to the power connection structure, and wherein the interconnect structure and the power connection structure are together less than one thousand four hundred microns thick.
17. The apparatus of claim 11 , wherein the means includes a part of an interconnect structure and a power connection structure, and wherein adhesive material is disposed between the interconnect structure and the power connection structure.
18. The apparatus of claim 11 , wherein the means includes a part of an interconnect structure and a power connection structure, and wherein the interconnect structure includes no crystalline semiconductor material.
19. The apparatus of claim 11 , wherein the means includes a part of an interconnect structure and a power connection structure, wherein a coolant through-hole extends through the interconnect structure and through the power connection structure, and wherein a liquid coolant flows through the coolant through-hole.
20. An apparatus comprising:
a power connection structure having a semiconductor power through-hole portion and a thick conductor layers portion, wherein the semiconductor power through-hole portion has a semiconductor body and a plurality of through-holes extending from a first surface of the semiconductor body to a second surface of the semiconductor body, wherein the thick conductor layers portion is disposed upon the semiconductor power through-hole portion, wherein the thick conductor layers portion includes an insulating layer that has a planar surface, and wherein the thick conduct layers portion has a horizontal conductor that is at least two microns thick;
an interconnect structure having a thin conductor layers portion and a plurality of surface mount attachment structures, wherein the thin conductor layers portion is produced using liquid resist processing such that no horizontal conductor of the thin conductors layer portion is more than one micron thick, wherein the thin conductors layer portion includes a plurality of conductive vias and has a planar surface fusion bonded to the planar surface of the insulating layer of the thick conductor layers portion of the power connection structure to create a plurality of electrical connections between the power connection structure and the interconnect structure through the plurality of conductive vias; and
a plurality of integrated circuit dice surface mounted to the surface mount attachment structures of the interconnect structure.
21. The apparatus of claim 20 , wherein the planar surfaces of the interconnect structure and the power connection structure physically contact each other within atomic dimensions such that direct bonds exist between the interconnect structure and the power connection structure without any adhesive material being disposed between the interconnect structure and the power connection structure.