Temperature sensing device
View Patent ↗The present invention relates to an integrated device, comprising a semiconductor device formed on a semiconductor substrate, a temperature sensing element formed within a semi-conductive layer formed on the semiconductor substrate, an electrically insulating layer formed over the semi-conductive layer, a metal layer formed over the insulation layer and forming an electrical contact of the semiconductor device, and a thermal contact extending from the metal layer through the electrically insulating layer to a first region of the semi-conductive layer, wherein the first region of the semi-conductive layer is electrically isolated from the temperature sensing element. The present invention also relates to a method of forming a temperature sensing element for integration with a semiconductor device.
1. An integrated device, comprising:
a semiconductor device formed on a semiconductor substrate;
a temperature sensing element formed within a semi-conductive layer formed on the semiconductor substrate;
an electrically insulating layer formed over the semi-conductive layer; and
a metal layer formed over the insulation layer and forming an electrical contact of the semiconductor device;
a thermal contact extending from the metal layer substantially through the electrically insulating layer adjacent to a first region of the semi-conductive layer, wherein the first region of the semi-conductive layer is electrically isolated from the temperature sensing element.
2. The device of claim 1 , further comprising between the first region and the temperature sensing element any one of:
a resistive region; and
at least one reversed P/N junction.
3. The device of claim 2 , wherein the at least one reversed P/N junctions forms any one of:
a diode;
a zener diode; and
a thyristor.
4. The device of claim 1 , wherein the metal layer substantially covers the semiconductor device and the temperature sensing element.
5. The device of claim 1 , wherein the temperature sensing element is formed on an outside edge of a die containing the semiconductor device.
6. The device of claim 1 , wherein the metal layer is at least 4 microns thick.
7. The device of claim 1 , wherein the thermal contact comprises a portion of the metal layer extending through an opening in the electrically insulating layer.
8. The device of claim 1 , further comprising a plurality of thermal contacts extending from the metal layer through the electrically insulating layer to a plurality of regions of the semi-conductive layer, wherein each of the plurality of regions is electrically isolated from the temperature sensing element.
9. The device of claim 8 , wherein the plurality of thermal contacts surround the temperature sensing element.
10. A method of forming a temperature sensing element for integration with a semiconductor device, comprising the steps of:
providing a semiconductor substrate;
forming a semiconductor device on said semiconductor substrate;
forming a temperature sensing element within a semi-conductive layer on said semiconductor substrate;
forming an electrically insulating layer over said semi-conductive layer; and
forming a metal layer over the electrically insulating layer, wherein the metal layer forms an electrical contact of the semiconductor device;
forming a thermal contact extending from the metal layer through the electrically insulating layer to a first region of the semi-conductive layer, wherein the first region of the semi-conductive layer is remote from the temperature sensing element and electrically isolated from the temperature sensing element.
11. The method of claim 10 , wherein the step of forming the thermal contact further comprises the step of:
forming an opening in the electrically insulating layer extending to the semi-conductive layer; and
depositing metal over the electrically insulating layer such that the metal layer extends through the opening to the semi-conductive layer.
12. The method of claim 10 , further comprising the step of forming between the first region and the temperature sensing element, any one of:
a resistive region; and
at least one reversed P/N junction.
13. The method of claim 10 , wherein the step of forming the metal layer further comprising forming the metal layer such that the metal layer substantially covers the semiconductor device and the temperature sensing element.
14. The method of claim 10 , wherein the step of forming the temperature sensing element further comprises locating the temperature sensing element on an outside edge of a die containing the semiconductor device.
15. The method of claim 10 , wherein the metal layer is at least 4 microns thick.
16. The method of claim 10 , further comprising the step of forming a plurality of thermal contacts extending from the metal layer through the electrically insulating layer to a plurality of regions of the semi-conductive layer, wherein each of the plurality of regions electrically isolated from the temperature sensing element.
17. The method of claim 16 , further comprising the step of locating the plurality of thermal contacts such that they surround the temperature sensing element.