MOS device with Schottky barrier controlling layer

1. A semiconductor device formed on a semiconductor substrate, comprising:

an epitaxial layer overlaying the semiconductor substrate;

a drain formed on back of the semiconductor substrate;

a drain region that extends into the epitaxial layer; and

an active region comprising:

a body disposed in the epitaxial layer, having a body top surface;

a source embedded in the body, extending from the body top surface into the body;

a gate trench extending into the epitaxial layer;

a gate disposed in the gate trench;

an active region contact trench extending through the source and the body into the drain region;

an active region contact electrode disposed within the active region contact trench, wherein the active region contact electrode and the drain region form a Schottky diode; and

a Schottky barrier controlling layer that is disposed in the epitaxial layer adjacent to the active region contact trench and that does not extend into the body.

2. The semiconductor device of claim 1 , wherein the Schottky barrier controlling layer is disposed adjacent to a lower portion of the active region contact trench.

3. The semiconductor device of claim 1 , wherein the Schottky barrier controlling layer includes a thin layer of material doped with opposite polarity dopant as the epitaxial layer.

4. The semiconductor device of claim 1 , wherein the Schottky barrier controlling layer comprising a thin layer of narrow bandgap material.

5. The semiconductor device of claim 1 , wherein the gate trench is a first gate trench; and

the device further comprising a gate region comprising:

a second gate trench extending into the epitaxial layer;

a second gate disposed in the gate trench; and

a gate contact trench formed within the second gate.

6. The semiconductor device of claim 5 , wherein the active region contact trench has a different depth than the gate contact trench.

7. The semiconductor device of claim 1 , wherein the active region contact trench has a non-uniform depth.

8. The semiconductor device of claim 1 , wherein:

the active region contact trench has a first depth and a second depth;

the first depth is shallower than the second depth; and

a first contact opening corresponding to the first depth is wider than a second contact opening corresponding to the second depth.

9. The semiconductor device of claim 1 , further comprising an anti-punch through implant disposed on a sidewall of the active region contact trench.

10. The semiconductor device of claim 9 , wherein the anti-punch through implant is disposed above the Schottky barrier controlling layer.

11. The semiconductor device of claim 1 , further comprising a blanket implant deposited throughout the epitaxial layer, wherein the blanket implant has opposite polarity as the epitaxial layer.

12. The semiconductor device of claim 1 , further comprising an epitaxial layer profile tuning implant deposited under the active region contact trench.

13. The semiconductor device of claim 1 , further comprising an island region below the active region contact trench, wherein the island region has opposite polarity as the epitaxial layer.

14. The semiconductor device of claim 1 , wherein the gate extends above the body top surface.