Wafer processing method
There is provided a wafer processing method for reducing a thickness of a wafer. The wafer has a front side and a back side opposite to the front side. The wafer has a device area where a plurality of devices are formed on the front side and a peripheral marginal area including a curved peripheral edge. A protective layer for covering the plural devices are formed on the front side in the device area. The wafer processing method includes a plasma etching step of supplying an etching gas in a plasma condition to the front side of the wafer by using the protective layer as a mask, thereby removing the peripheral marginal area including the curved peripheral edge, a protective member attaching step of attaching a protective member to the front side of the wafer, and a grinding step of grinding the back side of the wafer.
1. A wafer processing method for reducing a thickness of a wafer to a predetermined thickness, the wafer having a front side and a back side opposite to the front side, the wafer having a device area where a plurality of devices are formed on the front side and a peripheral marginal area surrounding the device area and including a curved peripheral edge, a protective layer for covering the plurality of devices being formed on the front side in the device area, the protective layer being not formed in the peripheral marginal area, the wafer processing method comprising:
a plasma etching step of supplying an etching gas in a plasma condition to the front side of the wafer by using the protective layer as a mask, thereby removing the peripheral marginal area including the curved peripheral edge such that a depth of an etched portion of the peripheral marginal area becomes larger than the predetermined thickness;
a protective member attaching step of attaching a protective member to the front side of the wafer after performing the plasma etching step; and
a grinding step of holding the wafer through the protective member on a chuck table included in a grinding apparatus and then grinding the back side of the wafer to thereby reduce the thickness of the wafer to the predetermined thickness.
2. The wafer processing method according to claim 1 , wherein
the protective layer includes a passivation film or a photoresist film formed on the front side of the wafer in a step of forming the plurality of devices.
3. The wafer processing method according to claim 1 , wherein
the protective layer is formed such that an interdevice area between any adjacent ones of the plurality of devices on the front side of the wafer is exposed,
the plasma etching step including the step of supplying the etching gas in the plasma condition to the front side of the wafer by using the protective layer as the mask, thereby removing the peripheral marginal area and also forming a groove along the interdevice area in the device area on the front side of the wafer, the groove having a depth larger than the predetermined thickness.