Gas treatment systems
View Patent ↗An MOCVD reactor such as a rotating disc reactor ( 10 ) is equipped with a gas injector head having diffusers ( 129 ) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets ( 117 ) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets ( 125 ) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet ( 135 ) for the second gas coaxial with the axis of rotation.
1. A reactor for gas treatment of one or more substrates, the reactor comprising:
a source of a first reactant gas;
a source of a second reactant gas reactive with the first reactant gas;
a reaction chamber;
a substrate holder for supporting the one or more substrates mounted within the reaction chamber for rotation about an axis extending in upstream and downstream directions;
an injector head disposed upstream of the substrate holder, the injector head including structure defining:
a plurality of first gas inlets coupled to the source of the first reactant gas, the first gas inlets being disposed only in a first row extending in a first radial direction perpendicular to the axis and in a second row extending in a second radial direction perpendicular to the axis and perpendicular to the first radial direction; and
a plurality of second gas field inlets coupled to the source of the second reactant gas, the second gas field inlets being disposed in quadrants of the injector head around the axis between the rows of first gas inlets.
2. A reactor as claimed in claim 1 wherein the injector head has a surface facing downstream and the second gas field inlets are disposed in an array extending over substantially the entire surface other than regions of the surface occupied by the first and second rows.
3. A reactor as claimed in claim 1 wherein the substrate holder is arranged to support one or more substrates so that surfaces of the substrates to be treated lie substantially perpendicular to the axis and face upstream.
4. A reactor as claimed in claim 1 wherein the first and second rows of first gas inlets extend to a first radial distance from the axis and wherein the second gas field inlets extend to a second radial distance greater than the first radial distance.
5. Apparatus as claimed in claim 1 wherein the substrate holder is operative to rotate around the axis so as to impel the first and second reactant gases into circumferential flow about the axis so that the first and second reactant gases mix with one another.
6. A reactor for gas treatment of one or more substrates, the reactor comprising:
a source of a first reactant gas;
a source of a second reactant gas reactive with the first reactant gas;
a reaction chamber;
a substrate holder for supporting the one or more substrates mounted within the reaction chamber for rotation about an axis extending in upstream and downstream directions;
an injector head disposed upstream of the substrate holder, the injector head including structure defining:
a plurality of first gas inlets coupled to the source of the first reactant gas, the first gas inlets being disposed in a first row extending in a first radial direction perpendicular to the axis and in a second row extending in a second radial direction perpendicular to the axis and perpendicular to the first radial direction; and
a plurality of second gas field inlets coupled to the source of the second reactant gas, the second gas field inlets being disposed in quadrants of the injector head around the axis between the rows of first gas inlets;
wherein the injector head further defines a center second gas inlet disposed at the axis and coupled to the source of the second reactant gas,
and wherein the reactor further comprises one or more first gas control elements connected to the first gas inlets, one or more second gas field control elements connected to the second gas field inlets and a second gas center control element connected to the second gas center inlet, the second gas center control element being operable independently of the second gas field control elements.
7. Apparatus as claimed in claim 6 wherein the substrate holder is operative to rotate around the axis so as to impel the first and second reactant gases into circumferential flow about the axis so that the first and second reactant gases mix with one another.
8. A reactor as claimed in claim 6 wherein the injector head has a surface facing downstream and the second gas field inlets are disposed in an array extending over substantially the entire surface other than regions of the surface occupied by the first and second rows.
9. A reactor as claimed in claim 6 wherein the substrate holder is arranged to support one or more substrates so that surfaces of the substrates to be treated lie substantially perpendicular to the axis and face upstream.
10. A reactor as claimed in claim 6 wherein the first and second rows of first gas inlets extend to a first radial distance from the axis and wherein the second gas field inlets extend to a second radial distance greater than the first radial distance.
11. A reactor as claimed in claim 6 wherein the first gas inlets are disposed only in the first and second rows.