Semiconductor device having a tapered plug

1. A semiconductor device, comprising:

first and second interlayer dielectric films consecutively deposited to overlie a semiconductor substrate;

a first plug penetrating said first interlayer dielectric film and having a top surface located within said second interlayer dielectric film; and

a second plug formed within said second interlayer dielectric film, said second plug including a first portion having a diameter reducing from a top surface of said second interlayer dielectric film toward a bottom thereof and a second portion extending between said first portion and said first plug, said second portion having a diameter increasing from said first portion toward said first plug.

2. The semiconductor device according to claim 1 , further comprising a third interlayer dielectric film formed on said second interlayer dielectric film, wherein said second plug has a third portion extending from said first portion and penetrating said third interlayer dielectric film, said third portion having a diameter increasing toward a top of said third portion.

3. The semiconductor device according to claim 1 , further comprising a sidewall insulating film formed between said second interlayer dielectric film and a side surface of said first plug so as to cover said side surface of said first plug.

4. The semiconductor device according to claim 3 , wherein said sidewall insulating film has an impurity concentration higher than an impurity concentration of said second interlayer dielectric film.

5. The semiconductor device according to claim 3 , wherein said sidewall insulating film has an inner cylindrical surface in contact with the side surface of said first plug, a bottom surface in contact with said first interlayer dielectric film, and an outer inclined surface in contact with said second interlayer dielectric film.

6. The semiconductor device according to claim 3 , wherein the sidewall insulating film is disposed inside the second interlayer dielectric film such that a bottom surface of the sidewall insulating film contacts the first interlayer dielectric film and a top edge of the sidewall insulating film contacts a top edge of the first plug and a bottom edge of the second plug.

7. The semiconductor device according to claim 3 , wherein the sidewall insulating film is completely disposed inside the second interlayer dielectric film.

8. The semiconductor device according to claim 1 , wherein the top surface of the first plug is located inside the second interlayer dielectric film above a top surface of the first interlayer dielectric film.

9. The semiconductor device according to claim 1 , wherein the first plug penetrates inside the second interlayer dielectric film such that a height of the first plug is greater than a height of the first interlayer dielectric film.

10. The semiconductor device according to claim 1 , wherein the first plug penetrates inside the second interlayer dielectric film with the same uniform width that the first plug extends through the first interlayer dielectric film.

11. The semiconductor device according to claim 1 , wherein an area of a bottom surface of the second plug is equal to an area of the top surface of the first plug such that the bottom surface of the second plug coincides with the top surface of the first plug.

12. The semiconductor device according to claim 1 , wherein the second portion connects edges of a bottom surface of the second plug to edges of the top surface of the first plug in an increasing inclined profile.

13. The semiconductor device according to claim 1 , wherein the diameter of the second portion continuously increases, from an interface between the first portion and the second portion, toward the top surface of the first plug, the interface being located below the top surface of the second interlayer dielectric film and above a top surface of the first interlayer dielectric film.

14. The semiconductor device according to claim 1 , wherein the second plug comprises a continuous solid plug, an internal space of the second plug, placed between side surfaces of the second plug, being filled with a same conductive material.

15. The semiconductor device according to claim 1 , wherein the first and second portions of the second plug are integrally formed.

16. A semiconductor device, comprising:

a plug provided in an interlayer dielectric film, the plug including a first portion having a first diameter, a second portion formed above the first portion and having a second diameter, and a third portion, provided between the first portion and the second portion, having a third diameter, the first diameter being larger than the third diameter, and the second diameter being larger than the third diameter,

wherein the first diameter increases in a direction from the second portion toward a bottom of the first portion.

17. The semiconductor device according to claim 16 , wherein the third portion forms an interface between the first portion and the second portion such that the diameter of the second portion continuously increases, from the interface, toward a top surface of the second plug, and the diameter of the first portion continuously increases, from the interface, toward a bottom of the interlayer dielectric film, the interface being located inside the interlayer dielectric film above the bottom of the interlayer dielectric film.

18. The semiconductor device according to claim 16 , wherein the plug comprises a continuous solid plug, an internal space of the plug, placed between side surfaces of the plug, being filled with a same conductive material.

19. The semiconductor device according to claim 16 , wherein the first, second, and third portions are integrally formed.

20. A semiconductor device, comprising:

first and second interlayer dielectric films consecutively deposited on a semiconductor substrate;

a first plug extending through the first interlayer dielectric film and penetrating the second interlayer dielectric film, a top surface of the first plug being located inside the second interlayer dielectric film above the first interlayer dielectric film; and

a second plug formed within the second interlayer dielectric film above the first interlayer dielectric film, the second plug comprising:

a conversion portion that extends from a top surface of the second interlayer dielectric film to an interface located within the second interlayer dielectric film; and

a divergence portion that extends continuously from the interface to side edges of the top surface of first plug.