Semiconductor integrated circuit including bank selection control block

1. A semiconductor integrated circuit comprising:

an up bank block that includes a first group of banks;

a down bank block that includes a second group of banks; and

a bank selection control block that provides up and down bank even-numbered global line control signals, up and down bank odd-numbered global line control signals, and up and down bank SDRAM write global line control signals in response to first and second group read control signals and a bank information signal in the up bank block and the down bank block,

wherein the bank selection control block responds to a DDR signal and an SDR signal that are provided from an MRS (Mode Register Set).

2. The semiconductor integrated circuit of claim 1 ,

wherein the up and down bank SDRAM write global line control signals control SDRAM write global lines to be selectively driven in the up bank block and the down bank block in response to the SDR signal, and

the up and down bank even-numbered global line control signals and the up and down bank odd-numbered global line control signals control even-numbered global lines and odd-numbered global lines to be selectively driven in the up bank block and the down bank block.

3. The semiconductor integrated circuit of claim 1 ,

wherein the bank selection control block comprises:

a read/write control signal generating block that generates an up bank block column control signal, a down bank block column control signal, an up bank block read control signal, and a down bank block read control signal in response to the bank information signal, the first and second group read control signals, and a write activation signal;

a global line control signal generating block that provides the up and down bank even-numbered global line control signals by receiving the up and down bank block column control signals and the up and down bank block read control signals, and provides the up and down bank SDRAM write global line control signals in response to the SDR signal and the bank information signal; and

a transmission block that receives output signals of the global line control signal generating block and selectively transmits the output signals to the up bank block and the down bank block through even-numbered global lines and odd-numbered global lines.

4. The semiconductor integrated circuit of claim 3 ,

wherein the read/write control signal generating block comprises:

an up bank read/write signal generating unit that generates the up bank block column control signal and the up bank block read control signal to control a read/write operation in the up bank block; and

a down bank read/write signal generating unit that generates the down bank block column control signal and the down bank block read control signal to control a read/write operation in the down bank block.

5. The semiconductor integrated circuit of claim 4 ,

wherein the up bank read/write signal generating unit comprises:

an up bank column control signal generator that generates an up bank column activation information signal and the up bank block column control signal, which are activated in response to a bank information signal of any one of activated banks of the up bank block according to a write command; and

an up bank read control signal generator that generates an up bank read activation information signal and the up bank block read control signal, which are activated in response to the activated first group read control signal according to a read command.

6. The semiconductor integrated circuit of claim 5 ,

wherein the down bank read/write signal generating unit comprises:

a down bank column control signal generator that generates a down bank column activation information signal and the down bank block column control signal, which are activated in response to a bank information signal of any one of activated banks of the down bank block according to a write command; and

a down bank read control signal generator that generates a down bank read activation information signal and the down bank block read control signal, which are activated in response to the activated second group read control signal according to a read command.

7. The semiconductor integrated circuit of claim 6 ,

wherein the up bank column activation information signal is fed back to the down bank column control signal generator and the down bank column activation information signal is fed back to the up bank column control signal generator, and the activated up bank column activation information signal inactivates the down bank block column control signal and the activated down bank column activation information signal inactivates the up bank block column control signal.

8. The semiconductor integrated circuit of claim 6 ,

wherein the up bank read activation information signal is fed back to the down bank read control signal generator and the down bank read activation information signal is fed back to the up bank read control signal generator, and the activated up bank read activation information signal inactivates the down bank block read control signal and the activated down bank read activation information signal inactivates the up bank block read control signal.

9. The semiconductor integrated circuit of claim 3 ,

wherein the global line control signal generating block comprises:

an up bank global line control signal generating unit that generates the up bank even-numbered global line control signal and the up bank odd-numbered global line control signal in response to the up bank block column control signal, the up bank block read control signal, and a write enable signal, and generates an up bank SDRAM write global control signal in response to a bank information signal of an activated bank of the up bank block, when the SDR signal and the write enable signal are activated; and

a down bank global line control signal generating unit that generates the down bank even-numbered global line control signal and the down bank odd-numbered global line control signal in response to the down bank block column control signal, the down bank block read control signal, and the write enable signal, and generates a down bank SDRAM write global control signal in response to a bank information signal of an activated bank of the down bank block, when the SDR signal and the write enable signal are activated.

10. The semiconductor integrated circuit of claim 9 ,

wherein the up bank global line control signal generating unit comprises:

a first transmission unit that transmits the up bank block column control signal, when the write enable signal is activated;

a second transmission unit that transmits the up bank block read control signal, when the write enable signal is inactivated; and

an up bank SDRAM write global line control signal generator that generates an up bank SDRAM activation information signal and the up bank SDRAM write global line control signal, which are activated in response to a bank information signal of any one of activated banks of the up bank block, when the SDR signal and the write enable signal are activated.

11. The semiconductor integrated circuit of claim 10 ,

wherein the down bank global line control signal generating unit comprises:

a first transmission unit that transmits the down bank block column control signal, when the write enable signal is activated;

a second transmission unit that transmits the down bank block read control signal, when the write enable signal is inactivated; and

a down bank SDRAM write global line control signal generator that generates a down bank SDRAM activation information signal and the down bank SDRAM write global line control signal, which are activated in response to a bank information signal of any one of activated banks of the down bank block, when the SDR signal and the write enable signal are activated.

12. The semiconductor integrated circuit of claim 11 ,

wherein the up bank SDRAM activation information signal is fed back to the down bank SDRAM write global line control signal generator and the down bank SDRAM activation information signal is fed back to the up bank SDRAM write global line control signal generator, and the activated up bank column activation information signal inactivates the down bank block column control signal and the activated down bank column activation information signal inactivates the up bank block column control signal.

13. The semiconductor integrated circuit of claim 3 ,

wherein the transmission block comprises:

an up bank transmission unit that receives the up bank even-numbered global line control signal, the up bank odd-numbered global line control signal, and the up bank SDRAM write global line control signal, and controls the even-numbered global lines, the odd-numbered global lines, and a SDRAM write global line to be selectively driven in the up bank block; and

a down bank transmission unit that receives the down bank even-numbered global line control signal, the down bank odd-numbered global line control signal, and the down bank SDRAM write global line control signal, and controls the even-numbered global lines, the odd-numbered global lines, and an SDRAM write global line to be selectively driven in the down bank block.

14. The semiconductor integrated circuit of claim 13 ,

wherein the up bank transmission unit comprises:

a first transmission unit that provides the even-numbered global line signal as an output signal to the up bank block in response to the activated up bank even-numbered global line control signal;

a second transmission unit that provides the odd-numbered global line signal as an output signal to the up bank block in response to the activated up bank odd-numbered global line control signal; and

a third transmission unit that provides the SDRAM write global signal as an output signal to the up bank block in response to the activated up bank SDRAM write global line control signal.

15. The semiconductor integrated circuit of claim 13 ,

wherein the down bank transmission unit comprises:

a first transmission unit that provides the even-numbered global line signal as an output signal to the down bank block in response to the activated down bank even-numbed global line control signal;

a second transmission unit that provides the odd-numbered global line signal as an output signal to the down bank block in response to the activated down bank odd-numbered global line control signal; and

a third transmission unit that provides the SDRAM write global signal as an output signal to the down bank block in response to the activated down bank SDRAM write global line control signal.

16. A semiconductor integrated circuit comprising:

an up bank block that includes a first group of banks;

a down bank block that includes a second group of banks;

a bank control block that provides up and down bank even-numbered global line control signals, up and down bank odd-numbered global line control signals, and up and down bank SDRAM write global line control signals in response to first and second group read control signals and a bank information signal; and

a transmission block that selectively provides output signals of the bank control block to the up bank block and the down bank block,

wherein the bank control block responds to a DDR signal and an SDR signal that are provided from an MRS (Mode Register Set).

17. The semiconductor integrated circuit of claim 16 ,

wherein the up and down bank SDRAM write global line control signals control SDRAM write global lines to be selectively driven in the up bank block and the down bank block in response to the SDR signal, and

the up and down bank even-numbered global line control signals and the up and down bank odd-numbered global line control signals control even-numbered global lines and odd-numbered global lines to be selectively driven in the up bank block and the down bank block.

18. The semiconductor integrated circuit of claim 16 ,

wherein the bank control block comprise:

a read/write control signal generating block that generates an up bank block column control signal, a down bank block column control signal, an up bank block read control signal, and a down bank block read control signal in response to the bank information signal, the first and second group read control signals, and a write activation signal; and

a global line control signal generating block that receives the up and down bank block column control signals and the up and down bank block read control signals and provides the up and down bank even-numbered global line control signals and the up and down bank odd-numbered global line control signals, and provides the up and down bank SDRAM write global line control signals in response to the SDR signal and the bank information signal.

19. The semiconductor integrated circuit of claim 18 ,

wherein the read/write control signal generating block comprises:

an up bank read/write signal generating unit that generates an up bank block column control signal and an up bank block read control signal to control a read/write operation in the up bank block; and

a down bank read/write signal generating unit that generates a down bank block column control signal and a down bank block read control signal to control a read/write operation in the down bank block.

20. The semiconductor integrated circuit of claim 19 ,

wherein the up bank read/write signal generating unit comprises:

an up bank column control signal generator that generates an up bank column activation information signal and the up bank block column control signal, which are activated in response to a bank information signal of any one of activated banks of the up bank block according to a write command; and

an up bank read control signal generator that generates an up bank read activation information signal and the up bank block read control signal, which are activated in response to the activated first group read control signal according to a read command.

21. The semiconductor integrated circuit of claim 19 ,

wherein the down bank read/write signal generating unit comprises:

a down bank column control signal generator that generates a down bank column activation information signal and the down bank block column control signal, which are activated in response to a bank information signal of any one of activated banks of the down bank block according to a write command; and

a down bank read control signal generator that generates a down bank read activation information signal and the down bank block read control signal, which are activated in response to the activated second group read control signal according to a read command.

22. The semiconductor integrated circuit of claim 18 ,

wherein the global line control signal generating block comprises:

an up bank global line control signal generating unit that generates the up bank even-numbered global line control signal and the up bank odd-numbered global line control signal in response to the up bank block column control signal, the up bank block read control signal, and a write enable signal, and generates an up bank SDRAM write global control signal in response to a bank information signal of an activated bank of the up bank block, when the SDR signal and the write enable signal are activated; and

a down bank global line control signal generating unit that generates the down bank even-numbered global line control signal and the down bank odd-numbered global line control signal in response to the down bank block column control signal, the down bank block read control signal, and the write enable signal, and generates a down bank SDRAM write global control signal in response to a bank information signal of an activate bank of the down bank block, when the SDR signal and the write enable signal are activated.

23. The semiconductor integrated circuit of claim 22 ,

wherein the up bank global line control signal generating unit comprises:

a first transmission unit that transmits the up bank block column control signal, when the write enable signal is activated;

a second transmission unit that transmits the up bank block read control signal, when the write enable signal is inactivated; and

an up bank SDRAM write global line control signal generator that generates an up bank SDRAM activation information signal and the up bank SDRAM write global line control signal, which are activated in response to a bank information signal of any one of activated banks of the up bank block, when the SDR signal and the write enable signal are activated.

24. The semiconductor integrated circuit of claim 22 ,

wherein the down bank global line control signal generating unit comprises:

a first transmission unit that transmits the down bank block column control signal, when the write enable signal is activated;

a second transmission unit that transmits the down bank block read control signal, when the write enable signal is inactivated; and

a down bank SDRAM write global line control signal generator that generates a down bank SDRAM activation information signal and the down bank SDRAM write global line control signal, which are activated in response to a bank information signal of any one of activated banks of the down bank block, when the SDR signal and the write enable signal are activated.

25. The semiconductor integrated circuit of claim 16 ,

wherein the transmission block comprises:

an up bank transmission unit that receives the up bank even-numbered global line control signal, the up bank odd-numbered global line control signal, and the up bank SDRAM write global line control signal, and controls the even-numbered global lines, the odd-numbered global lines, and the SDRAM write global line to be selectively driven in the up bank block; and

a down bank transmission unit that receives the down bank even-numbered global line control signal, the down bank odd-numbered global line control signal, and the down bank SDRAM write global line control signal, and controls the even-numbered global lines, the odd-numbered global lines, and the SDRAM write global line to be selectively driven in the down bank block.