Semiconductor device and method of testing semiconductor device

1. A semiconductor device comprising:

a first memory; and

a second memory,

wherein said first memory includes:

a first memory cell array configured to be divided into a plurality of sectors,

an erasure time setting register configured to hold a sector erasure assurance time to assure an erasure time for erasing data stored in one sector, and

a first control circuit configured to execute a sector erasure test in which data stored in at least one selected sector selected from said plurality of sectors are erased within said sector erasure assurance time,

wherein said second memory includes:

a second memory cell array configured to have a data storage system different from that of said first memory cell array, and

a second control circuit configured to execute a data hold test with respect to said second memory cell array while said sector erasure test is executed.

2. The semiconductor device according to claim 1 , wherein, in a case that the time when data stored in a sector of said at least one selected sector are erased is within said sector erasure assurance time, said first control circuit erases data stored in next sector of said at least one selected sector.

3. The semiconductor device according to claim 1 , wherein said second control circuit writes a write data into a target memory cell of said second memory cell array and read out said written data from said target memory cell as a read data in said data hold test.

4. The semiconductor device according to claim 1 , wherein said first memory includes a flash memory, and

said second memory includes a RAM.

5. The semiconductor device according to claim 1 , wherein said first memory and said second memory are mounted on a same package.

6. The semiconductor device according to claim 1 , further comprising:

a BIST (Built-In-Self-Test) circuit configured to control said first control circuit so as to execute said sector erasure test and control said second control circuit so as to execute said data hold test.

7. The semiconductor device according to claim 6 , wherein said first memory, said second memory and said BIST circuit are formed on a same semiconductor substrate.

8. A method of testing a semiconductor substrate, comprising:

providing a semiconductor device, wherein said semiconductor includes:

a first memory including a first memory cell array divided into a plurality of sectors, and an erasure time setting register, and

a second memory including a second memory cell array having a data storage system different from that of said first memory cell array;

setting a sector erasure assurance time to assure an erasure time for erasing data stored in one sector in said erasure time setting register;

executing a sector erasure test in which data stored in at least one selected sector selected from said plurality of sectors are erased within said sector erasure assurance time; and

executing a data hold test with respect to said second memory cell array while said sector erasure test is executed.

9. The method of testing a semiconductor substrate, according to claim 8 , wherein said executing said sector erasure test step includes:

erasing data stored in next sector of said at least one selected sector in a case that the time when data stored in a sector of said at least one selected sector are erased is within said sector erasure assurance time.

10. The method of testing a semiconductor substrate, according to claim 8 , wherein said executing said data hold test step includes:

writing a write data into a target memory cell of said second memory cell array and reading out said written data from said target memory cell as a read data.

11. A method of testing a semiconductor substrate, comprising:

providing a semiconductor device, wherein said semiconductor includes:

a first memory including a first memory cell array divided into a plurality of sectors, and an erasure time setting register,

a second memory including a second memory cell array having a data storage system different from that of said first memory cell array, and

a BIST (Built-In-Self-Test) circuit;

said BIST circuit setting a sector erasure assurance time to assure an erasure time for erasing data stored in one sector in said erasure time setting register;

said BIST circuit executing a sector erasure test in which data stored in at least one selected sector selected from said plurality of sectors are erased within said sector erasure assurance time; and

said BIST circuit executing a data hold test with respect to said second memory cell array while said sector erasure test is executed.

12. The method of testing a semiconductor substrate, according to claim 11 , wherein said executing said sector erasure test step includes:

erasing data stored in next sector of said at least one selected sector in a case that the time when data stored in a sector of said at least one selected sector are erased is within said sector erasure assurance time.

13. The method of testing a semiconductor substrate, according to claim 11 , wherein said executing said data hold test step includes:

writing a write data into a target memory cell of said second memory cell array and reading out said written data from said target memory cell as a read data.